PartNumber | IXFN360N10T | IXFN360N15T2 | IXFN360N15 |
Description | MOSFET 360 Amps 100V | MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET | |
Manufacturer | IXYS | IXYS | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | Chassis Mount | Chassis Mount | - |
Package / Case | SOT-227-4 | SOT-227-4 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 100 V | 150 V | - |
Id Continuous Drain Current | 360 A | 310 A | - |
Rds On Drain Source Resistance | 2.6 mOhms | 4 mOhms | - |
Vgs th Gate Source Threshold Voltage | 2.5 V | - | - |
Vgs Gate Source Voltage | 10 V | - | - |
Qg Gate Charge | 525 nC | - | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 175 C | + 175 C | - |
Pd Power Dissipation | 830 W | - | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | - | - |
Tradename | HiPerFET | HiPerFET | - |
Packaging | Tube | Tube | - |
Product | MOSFET Power | - | - |
Series | IXFN360N10 | IXFN360N15 | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Type | Power MOSFET | GigaMOS Trench T2 HiperFet | - |
Brand | IXYS | IXYS | - |
Forward Transconductance Min | 110 S | - | - |
Fall Time | 160 ns | 265 ns | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 100 ns | 170 ns | - |
Factory Pack Quantity | 10 | 10 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 80 ns | - | - |
Typical Turn On Delay Time | 47 ns | - | - |
Unit Weight | 1.058219 oz | 1.058219 oz | - |