We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
Email: info@omo-ic.com
| Part # | Mfg. | Description | Stock | Price |
|---|---|---|---|---|
| FQP2N60C DISTI # V36:1790_06301279 | ON Semiconductor | 600V N-CHANNEL ADVANCE Q-FET C | 0 |
|
| FQP2N60C DISTI # FQP2N60CFS-ND | ON Semiconductor | MOSFET N-CH 600V 2A TO-220 Min Qty: 1 Container: Tube | 12602In Stock |
|
| FQP2N60C DISTI # 26647987 | ON Semiconductor | 600V N-CHANNEL ADVANCE Q-FET C | 2000 |
|
| FQP2N60C DISTI # 26416007 | ON Semiconductor | 600V N-CHANNEL ADVANCE Q-FET C | 1984 |
|
| FQP2N60C DISTI # FQP2N60C | ON Semiconductor | Trans MOSFET N-CH 600V 2A 3-Pin(3+Tab) TO-220AB Rail - Bulk (Alt: FQP2N60C) RoHS: Compliant Min Qty: 736 Container: Bulk | Americas - 0 |
|
| FQP2N60C DISTI # FQP2N60C | ON Semiconductor | Trans MOSFET N-CH 600V 2A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube (Alt: FQP2N60C) RoHS: Compliant Min Qty: 2000 Container: Tube | Americas - 0 |
|
| FQP2N60C DISTI # 97K0171 | ON Semiconductor | MOSFET, N CHANNEL, 600V, 2A, TO-220-3,Transistor Polarity:N Channel,Continuous Drain Current Id:2A,Drain Source Voltage Vds:600V,On Resistance Rds(on):3.6ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,MSL:- RoHS Compliant: Yes RoHS: Compliant | 0 |
|
| FQP2N60C DISTI # 512-FQP2N60C | ON Semiconductor | MOSFET 600V N-Channel Advance Q-FET RoHS: Compliant | 4482 |
|
| FQP2N60C | ON Semiconductor | Power Field-Effect Transistor, 2A I(D), 600V, 4.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant | 15000 |
|
| FQP2N60C | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 2A I(D), 600V, 4.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant | 1706 |
|
| FQP2N60C DISTI # 6715076 | ON Semiconductor | In a Pack of 5, FQP2N60C N-Channel MOSFET, 2 A, 600 V QFET, 3-Pin TO-220AB ON Semiconductor, PK Min Qty: 5 Container: Package | 205 |
|
| FQP2N60C DISTI # FQP2N60C | ON Semiconductor | Transistor: N-MOSFET,unipolar,600V,1.35A,54W,TO220AB | 166 |
|
| FQP2N60C DISTI # FQP2N60C | ON Semiconductor | N-Ch 600V 2A 54W 4,7R TO220 RoHS: Compliant | 400 |
|
| FQP2N60C | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 2A I(D), 600V, 4.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant | Europe - 150 | |
| FQP2N60C | ISC | TO-220 | 5000 | |
| FQP2N60C DISTI # 1095062 | ON Semiconductor | MOSFET, N, TO-220 RoHS: Compliant | 949 |
|
| FQP2N60C DISTI # 1095062 | ON Semiconductor | MOSFET, N, TO-220 RoHS: Compliant | 1619 |
|
| FQP2N60C DISTI # XSFP00000085553 | Fairchild Semiconductor Corporation | RoHS: Compliant | 1600 in Stock0 on Order |
|
| Image | Part # | Description |
|---|---|---|
|
Mfr.#: FQP2N60C/4N60C/7N6 OMO.#: OMO-FQP2N60C-4N60C-7N6-1190 |
New and Original |
|
|
Mfr.#: FQP2N60C/FQPF2N60C OMO.#: OMO-FQP2N60C-FQPF2N60C-1190 |
New and Original |