PartNumber | FQP2N40-F080 | FQP2N40 | FQP2N60 |
Description | MOSFET N-CH 400V 1.8A 5.8OHM | MOSFET 400V N-Channel QFET | MOSFET |
Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-220-3 | TO-220-3 | TO-220-3 |
Packaging | Tube | Tube | Tube |
Height | 16.3 mm | 16.3 mm | 16.3 mm |
Length | 10.67 mm | 10.67 mm | 10.67 mm |
Series | FQP2N40 | QFET | - |
Width | 4.7 mm | 4.7 mm | 4.7 mm |
Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 1000 | 50 | 50 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Part # Aliases | FQP2N40_F080 | - | FQP2N60_NL |
Unit Weight | 0.063493 oz | 0.050717 oz | 0.050717 oz |
Number of Channels | - | 1 Channel | 1 Channel |
Transistor Polarity | - | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | - | 400 V | 600 V |
Id Continuous Drain Current | - | 1.8 A | 2.4 A |
Rds On Drain Source Resistance | - | 5.8 Ohms | 4.7 Ohms |
Vgs Gate Source Voltage | - | 30 V | 30 V |
Minimum Operating Temperature | - | - 55 C | - 55 C |
Maximum Operating Temperature | - | + 150 C | + 150 C |
Pd Power Dissipation | - | 40 W | 64 W |
Configuration | - | Single | Single |
Channel Mode | - | Enhancement | Enhancement |
Transistor Type | - | 1 N-Channel | 1 N-Channel |
Type | - | MOSFET | MOSFET |
Forward Transconductance Min | - | 1.1 S | - |
Fall Time | - | 25 ns | 25 ns |
Rise Time | - | 30 ns | 25 ns |
Typical Turn Off Delay Time | - | 7 ns | 20 ns |
Typical Turn On Delay Time | - | 7 ns | 10 ns |