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FQP2N80

FQP2N80
Mfr. #:
FQP2N80
Manufacturer:
ON Semiconductor / Fairchild
Description:
MOSFET 800V N-Channel QFET
Lifecycle:
New from this manufacturer.
Datasheet:
FQP2N80 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
FQP2N80 Datasheet
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
ON Semiconductor
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-220-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
800 V
Id - Continuous Drain Current:
2.4 A
Rds On - Drain-Source Resistance:
6.3 Ohms
Vgs - Gate-Source Voltage:
30 V
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
85 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
QFET
Packaging:
Tube
Height:
16.3 mm
Length:
10.67 mm
Series:
FQP2N80
Transistor Type:
1 N-Channel
Type:
MOSFET
Width:
4.7 mm
Brand:
ON Semiconductor / Fairchild
Forward Transconductance - Min:
2.65 S
Fall Time:
28 ns
Product Type:
MOSFET
Rise Time:
30 ns
Factory Pack Quantity:
1000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
25 ns
Typical Turn-On Delay Time:
12 ns
Part # Aliases:
FQP2N80_NL
Unit Weight:
0.063493 oz
Tags
FQP2N, FQP2, FQP
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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
Transistor,mosfet,n-Channel,800V V(Br)Dss,2.4A I(D),to-220 Rohs Compliant: Yes
***et Europe
Trans MOSFET N-CH 800V 2.4A 3-Pin(3+Tab) TO-220AB Rail
***emi
N-Channel QFET® MOSFET 800V, 2.4A, 6.3Ω
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 2.4A I(D), 800V, 6.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET, N TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:2.4A; Drain Source Voltage Vds:800V; On Resistance Rds(on):6.3ohm; Rds(on) Test Voltage Vgs:-; Threshold Voltage Vgs:-; Power Dissipation Pd:85W; Transistor Case Style:TO-220; No. of Pins:3Pins; Operating Temperature Max:-; MSL:-; SVHC:No SVHC (15-Jan-2018); Alternate Case Style:SOT-78B; On State Resistance Max:6.3ohm; Pulse Current Idm:9.6A; Voltage Vgs th Max:5V
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Part # Mfg. Description Stock Price
FQP2N80
DISTI # V36:1790_06301280		ON SemiconductorQF 800V 6.3OHM TO2200
  • 1000000:$0.4459
  • 500000:$0.4463
  • 100000:$0.4871
  • 10000:$0.5650
  • 1000:$0.5783
FQP2N80
DISTI # FQP2N80-ND		ON SemiconductorMOSFET N-CH 800V 2.4A TO-220
RoHS: Compliant
Min Qty: 1000
Container: Tube		Temporarily Out of Stock
  • 1000:$0.5783
FQP2N80
DISTI # FQP2N80		ON SemiconductorTrans MOSFET N-CH 800V 2.4A 3-Pin(3+Tab) TO-220AB Rail (Alt: FQP2N80)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1000:€0.4239
  • 500:€0.4329
  • 100:€0.4469
  • 50:€0.4579
  • 25:€0.5429
  • 10:€0.6539
  • 1:€0.8409
FQP2N80
DISTI # FQP2N80		ON SemiconductorTrans MOSFET N-CH 800V 2.4A 3-Pin(3+Tab) TO-220AB Rail - Bulk (Alt: FQP2N80)
RoHS: Compliant
Min Qty: 532
Container: Bulk		Americas - 0
  • 5320:$0.5799
  • 2660:$0.5939
  • 1596:$0.6019
  • 1064:$0.6099
  • 532:$0.6139
FQP2N80
DISTI # FQP2N80		ON SemiconductorTrans MOSFET N-CH 800V 2.4A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube (Alt: FQP2N80)
RoHS: Compliant
Min Qty: 1000
Container: Tube		Americas - 0
  • 10000:$0.4539
  • 6000:$0.4649
  • 4000:$0.4709
  • 2000:$0.4769
  • 1000:$0.4799
FQP2N80
DISTI # 512-FQP2N80		ON SemiconductorMOSFET 800V N-Channel QFET
RoHS: Compliant		988
  • 1:$1.2000
  • 10:$1.0200
  • 100:$0.7900
  • 500:$0.6980
  • 1000:$0.5510
  • 2000:$0.4890
  • 10000:$0.4710
FQP2N80ON SemiconductorPower Field-Effect Transistor, 2.4A I(D), 800V, 6.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RoHS: Compliant		3000
  • 1000:$0.5400
  • 500:$0.5700
  • 100:$0.5900
  • 25:$0.6200
  • 1:$0.6600
FQP2N80Fairchild Semiconductor CorporationPower Field-Effect Transistor, 2.4A I(D), 800V, 6.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RoHS: Compliant		3621
  • 1000:$0.5400
  • 500:$0.5700
  • 100:$0.5900
  • 25:$0.6200
  • 1:$0.6600
FQP2N80Fairchild Semiconductor CorporationPower Field-Effect Transistor, 2.4A I(D), 800V, 6.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RoHS: Compliant		1000
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    Availability
    Stock:
    988
    On Order:
    2971
    Enter Quantity:
    Current price of FQP2N80 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $1.20
    $1.20
    10
    $1.02
    $10.20
    100
    $0.79
    $79.00
    500
    $0.70
    $349.00
    1000
    $0.55
    $551.00
    2000
    $0.49
    $978.00
    10000
    $0.47
    $4 710.00
    25000
    $0.46
    $11 400.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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