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IPAW60R600CEXKSA1

IPAW60R600CEXKSA1
Mfr. #:
IPAW60R600CEXKSA1
Manufacturer:
Infineon Technologies
Description:
MOSFET CONSUMER
Lifecycle:
New from this manufacturer.
Datasheet:
IPAW60R600CEXKSA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
IPAW60R600CEXKSA1 more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-220FP-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
600 V
Id - Continuous Drain Current:
10.3 A
Rds On - Drain-Source Resistance:
1.4 Ohms
Vgs th - Gate-Source Threshold Voltage:
2.5 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
20.5 nC
Minimum Operating Temperature:
- 40 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
82 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
CoolMOS
Packaging:
Tube
Height:
16.15 mm
Length:
10.65 mm
Series:
CoolMOS CE
Transistor Type:
1 N-Channel
Width:
4.85 mm
Brand:
Infineon Technologies
Fall Time:
11 ns
Product Type:
MOSFET
Rise Time:
8 ns
Factory Pack Quantity:
450
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
58 ns
Typical Turn-On Delay Time:
10 ns
Part # Aliases:
IPAW60R600CE SP001391618
Unit Weight:
0.211644 oz
Tags
IPAW60R600C, IPAW60R6, IPAW60R, IPAW6, IPAW, IPA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans MOSFET N-CH 650V 10.3A 3-Pin TO-220FP Tube
***ineon SCT
Improved creepage distance for open frame power supplies, PG-TO220-3, RoHS
***ark
Mosfet, N-Ch, 600V, 10.3A, To-220Fp-3; Transistor Polarity:n Channel; Continuous Drain Current Id:10.3A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.54Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes
***ineon
Improved creepage distance for open frame power supplies | Summary of Features: Increased distance of 4.25mm between pins to meet wide creepage requirements; Package height and width identical with standard TO-220 FullPAK package | Benefits: Wider creepage between pins to avoid arcing even in polluted environment; Compatible with EN 60664-1 standard group III; Cost savings in creepage protection by removing additional efforts spent in alternative solutions today; Fully automated PCB assembly; FullPAK benefit of isolation | Target Applications: Consumer; PC power
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ CE Power MOSFETs
Infineon's CoolMOS™ CE Power MOSFETs are a technology platform of high voltage power MOSFETs that are designed according to the superjunction principle (SJ) and conceived to fulfill consumer requirements. CoolMOS™ CE portfolio offers 500V, 600V, 650V, 700V, and 800V devices targeting low power chargers for mobile devices and power tools, adapters for notebook and laptops, LCD, LED TV and LED lighting. This new series of CoolMOS™ is cost optimized to meet typical requirements in consumer with no compromise on proven CoolMOS™ quality and reliability while still being price attractive.
CoolMOS CE Power MOSFETs - 600-650V
Infineon 600V/650V CoolMOS™ CE N-Channel Power MOSFETs are a technology platform of Infineon's market leading high voltage power MOSFET designed according to the superjunction principle (SJ) and conceived to fulfill consumer requirements. These 600V/650V CoolMOS™ MOSFETs are cost optimized to meet typical requirements in consumer with no compromise on proven CoolMOS™ quality and reliability while still been price attractive. These devices target low power chargers for mobile devices and power tools, LCD, LED TV and LED lighting applications.
Part # Mfg. Description Stock Price
IPAW60R600CEXKSA1
DISTI # 32735937		Infineon Technologies AGTrans MOSFET N-CH 600V 10.3A 3-Pin(3+Tab) TO-220FP Tube12600
  • 450:$0.4915
IPAW60R600CEXKSA1
DISTI # 32892569		Infineon Technologies AGTrans MOSFET N-CH 600V 10.3A 3-Pin(3+Tab) TO-220FP Tube1326
  • 1000:$0.4534
  • 500:$0.5752
  • 100:$0.6504
  • 27:$0.8465
IPAW60R600CEXKSA1
DISTI # IPAW60R600CEXKSA1-ND		Infineon Technologies AGMOSFET N-CH 600V TO220-3
RoHS: Compliant
Min Qty: 1
Container: Tube		450In Stock
  • 5400:$0.4274
  • 2700:$0.4488
  • 900:$0.6091
  • 450:$0.6892
  • 25:$0.8976
  • 10:$0.9460
  • 1:$1.0600
IPAW60R600CEXKSA1
DISTI # IPAW60R600CEXKSA1		Infineon Technologies AGTrans MOSFET N-CH 650V 10.3A 3-Pin TO-220FP Tube - Rail/Tube (Alt: IPAW60R600CEXKSA1)
RoHS: Compliant
Min Qty: 900
Container: Tube		Americas - 0
  • 9000:$0.3869
  • 4500:$0.3939
  • 2700:$0.4079
  • 1800:$0.4239
  • 900:$0.4389
IPAW60R600CEXKSA1
DISTI # 97Y1818		Infineon Technologies AGMOSFET, N-CH, 600V, 10.3A, TO-220FP-3,Transistor Polarity:N Channel,Continuous Drain Current Id:10.3A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.54ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes0
    IPAW60R600CEXKSA1
    DISTI # 726-IPAW60R600CEXKSA    		Infineon Technologies AGMOSFET CONSUMER
    RoHS: Compliant    		2878
    • 1:$1.0000
    • 10:$0.8550
    • 100:$0.6570
    • 500:$0.5810
    • 1000:$0.4580
    IPAW60R600CEXKSA1
    DISTI # 1339787    		Infineon Technologies AGMOSFET COOLMOS CE N-CH 600V 10A TO-220FP, TU450
    • 4500:£0.3800
    • 2250:£0.3910
    • 450:£0.4410
    IPAW60R600CEXKSA1
    DISTI # 2617444    		Infineon Technologies AGMOSFET, N-CH, 600V, 10.3A, TO-220FP-3
    RoHS: Compliant    		0
    • 1350:$0.7700
    • 900:$0.8510
    • 450:$1.1200
    • 10:$1.6000
    • 1:$1.8100
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    Availability
    Stock:
    Available
    On Order:
    1985
    Enter Quantity:
    Current price of IPAW60R600CEXKSA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $1.00
    $1.00
    10
    $0.86
    $8.55
    100
    $0.66
    $65.70
    500
    $0.58
    $290.50
    1000
    $0.46
    $458.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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