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FDMD86100

FDMD86100
Mfr. #:
FDMD86100
Manufacturer:
ON Semiconductor / Fairchild
Description:
MOSFET FET 100V 10.5 MOHM PQFN56
Lifecycle:
New from this manufacturer.
Datasheet:
FDMD86100 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
FDMD86100 more Information
Product Attribute
Attribute Value
Manufacturer:
ON Semiconductor
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
Power-33-8
Number of Channels:
2 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
100 V
Id - Continuous Drain Current:
39 A
Rds On - Drain-Source Resistance:
10.5 mOhms
Vgs th - Gate-Source Threshold Voltage:
3 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
21 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
33 W
Configuration:
Dual
Channel Mode:
Enhancement
Tradename:
PowerTrench Power Clip
Packaging:
Reel
Height:
0.8 mm
Length:
3.3 mm
Series:
FDMD86100
Transistor Type:
2 N-Channel
Width:
3.3 mm
Brand:
ON Semiconductor / Fairchild
Fall Time:
4.1 ns
Product Type:
MOSFET
Rise Time:
4.3 ns
Factory Pack Quantity:
3000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
18 ns
Typical Turn-On Delay Time:
13 ns
Unit Weight:
0.003455 oz
Tags
FDMD86, FDMD, FDM
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
Dual N-Channel Shielded Gate PowerTrench® MOSFET 100V, 39A, 10.5mΩ
***et Europe
Transistor MOSFET Array Dual N-CH 100V 39A 8-Pin PQFN T/R
***ark
100V Dual N-Channel PowerTrench MOSFET - 8LD, PQFN, JEDEC, 5.0X6.0MM, POWERCLIP DUAL, COMMON SOURCE
***ical
Trans MOSFET N-CH 100V 10A 8-Pin PQFN EP T/R
***r Electronics
Power Field-Effect Transistor, 39A I(D), 100V, 0.0105ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***rchild Semiconductor
This package integrates two N-Channel devices connected internally in common-source configuration and incorporates Shielded Gate technology. This enables very low package parasitics and optimized thermal path to the common source pad on the bottom. Provides a very small footprint (5 x 6 mm) for higher power density.
***emi
N-Channel PowerTrench® MOSFET 100V, 11.2A, 9.8mΩ
***ure Electronics
Single N-Channel 100 V 17 mOhm 41 nC 2.5 W PowerTrench SMT Mosfet - SOIC-8
***Yang
Trans MOSFET N-CH 100V 11.2A 8-Pin SOIC N T/R - Tape and Reel
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.
***ment14 APAC
MOSFET, N CH, 100V, 11.2A, 8SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:11.2A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0081ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.7V; Power Dissipation Pd:5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Pulse Current Idm:50A
***emi
Shielded Gate PowerTrench® MOSFET, N-Channel, 100 V, 50 A, 10.2 mΩ
*** Source Electronics
Trans MOSFET N-CH Si 100V 12.5A 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 100V 12.5A DPAK-3
*** Stop Electro
Power Field-Effect Transistor, 12.5A I(D), 100V, 0.0102ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
***nell
MOSFET, N CH, 100V, 50A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0085ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.8V; Power Dissipation Pd:127W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-252; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***et Japan
Transistor MOSFET Array Dual N-CH 100V 48A 8-Pin PQFN T/R
***emi
Dual N-Channel PowerTrench® MOSFET 100V 48A, 9.9mΩ
***ark
100V Dual N-Channel PowerTrench MOSFET - 8LD, PQFN, JEDEC, 5.0X6.0MM, POWERCLIP DUAL, SYMMETRICAL HAL
***ment14 APAC
MOSFET, DUAL N-CH, 100V, 48A, 50W, PQFN; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:48A; Source Voltage Vds:100V; On
***r Electronics
Power Field-Effect Transistor, 48A I(D), 100V, 0.0099ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***rchild Semiconductor
This device includes two 100V N-Channel MOSFETs in a dual Power (5 mm X 6 mm) package. HS source and LS Drain internally connected for half/full bridge, low source inductance package, low rDS(on)/Qg FOM silicon.
***nell
MOSFET, DUAL N-CH, 100V, 48A, 50W, PQFN; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 48A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0078ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.1V; Power Dissipation Pd: 50W; Transistor Case Style: PQFN; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
***ure Electronics
Single N-Channel 100 V 10 mOhm 44 nC OptiMOS™ Power Mosfet - TDSON-8
***ow.cn
BSC100N10NSFGATMA1 Infineon Technologies AG Transistors MOSFETs N-CH 100V 11.4A Automotive 8-Pin TDSON EP T/R - Arrow.com
***ineon SCT
Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS, PG-TDSON-8, RoHS
***ment14 APAC
MOSFET, N CH, 90A, 100V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:90A; Drain Source Voltage Vds:100V; On Resistance Rds(on):7.7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:156W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (19-Dec-2011); Current Id Max:90A; Power Dissipation Pd:156W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon
The 100V OptiMOS family offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V80V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems; Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)
***ure Electronics
Single N-Channel 100 V 10.5 mOhm 40 nC OptiMOS™ Power Mosfet - TDSON-8
***ical
Trans MOSFET N-CH 100V 11.4A Automotive 8-Pin TDSON EP T/R
***ineon SCT
Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS, PG-TDSON-8, RoHS
***ment14 APAC
MOSFET, N CH, 90A, 100V, PG-TDSON-8; Transistor Polarity:N Channel; Drain Source Voltage Vds:100V; On Resistance Rds(on):8mohm; Rds(on) Test Voltage Vgs:10V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; Current Id Max:90A; Power Dissipation Pd:156W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon
The 100V OptiMOS family offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V80V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems; Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)
***ure Electronics
Single N-Channel 100 V 12.3 mOhm 51 nC OptiMOS™ Power Mosfet - TDSON-8
***roFlash
Power Field-Effect Transistor, 10.6A I(D), 100V, 0.0123ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***ineon SCT
Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS, PG-TDSON-8, RoHS
***ment14 APAC
MOSFET, N CH, 71A, 100V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:71A; Drain Source Voltage Vds:100V; On Resistance Rds(on):10mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.85V; Power Dissipation Pd:114W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:71A; Power Dissipation Pd:114W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon
The 100V OptiMOS family offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V80V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems; Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)
PowerTrench® MOSFETs
ON Semiconductor PowerTrench® MOSFETs offer a broad portfolio of MOSFETs in the industry. These MOSFETs offer both N-Channel and P-Channel versions that are optimized for low RDS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.  
Part # Mfg. Description Stock Price
FDMD86100
DISTI # V72:2272_06337943		ON Semiconductor100V DUAL N-CHANNEL POWERTRENC72
  • 25:$2.3110
  • 10:$2.3340
  • 1:$3.0371
FDMD86100
DISTI # V36:1790_06337943		ON Semiconductor100V DUAL N-CHANNEL POWERTRENC0
    FDMD86100
    DISTI # FDMD86100CT-ND    		ON SemiconductorMOSFET 2N-CH 100V
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      FDMD86100
      DISTI # FDMD86100DKR-ND      		ON SemiconductorMOSFET 2N-CH 100V
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        FDMD86100
        DISTI # FDMD86100TR-ND        		ON SemiconductorMOSFET 2N-CH 100V
        RoHS: Compliant
        Min Qty: 3000
        Container: Tape & Reel (TR)        		Temporarily Out of Stock
        • 3000:$1.4746
        FDMD86100
        DISTI # 25921891        		ON Semiconductor100V DUAL N-CHANNEL POWERTRENC72
        • 25:$2.3110
        • 10:$2.3340
        • 5:$3.0371
        FDMD86100
        DISTI # FDMD86100        		ON SemiconductorTrans MOSFET N-CH 150V 10A 8-Pin PQFN T/R - Bulk (Alt: FDMD86100)
        RoHS: Compliant
        Min Qty: 214
        Container: Bulk        		Americas - 0
        • 1070:$1.3900
        • 2140:$1.3900
        • 214:$1.4900
        • 428:$1.4900
        • 642:$1.4900
        FDMD86100
        DISTI # FDMD86100        		ON SemiconductorTrans MOSFET N-CH 150V 10A 8-Pin PQFN T/R - Tape and Reel (Alt: FDMD86100)
        RoHS: Compliant
        Min Qty: 3000
        Container: Reel        		Americas - 0
        • 3000:$1.2900
        • 6000:$1.2900
        • 12000:$1.2900
        • 18000:$1.2900
        • 30000:$1.2900
        FDMD86100
        DISTI # 45Y5126        		ON SemiconductorFET 80V 10.5 MOHM PQFN56 / REEL0
        • 30000:$1.3000
        • 18000:$1.3200
        • 12000:$1.3700
        • 6000:$1.4800
        • 3000:$1.5800
        • 1:$1.6600
        FDMD86100
        DISTI # 512-FDMD86100        		ON SemiconductorMOSFET FET 80V 10.5 MOHM PQFN56
        RoHS: Compliant        		2991
        • 1:$2.7800
        • 10:$2.3700
        • 100:$2.0500
        • 250:$1.9400
        • 500:$1.7400
        • 1000:$1.4700
        • 3000:$1.4000
        FDMD86100Fairchild Semiconductor CorporationPower Field-Effect Transistor
        RoHS: Compliant        		1078
        • 1000:$1.5400
        • 500:$1.6200
        • 100:$1.6900
        • 25:$1.7600
        • 1:$1.9000
        Image Part # Description
        FDMD8540L

        Mfr.#: FDMD8540L

        OMO.#: OMO-FDMD8540L

        		 MOSFET 40V Dual N-Channel PowerTrench MOSFET
        ADG1411YRUZ

        Mfr.#: ADG1411YRUZ

        OMO.#: OMO-ADG1411YRUZ

        		 Analog Switch ICs 1.8 Ohm 250mA iCMOS Quad SPST
        ADG1411YRUZ

        Mfr.#: ADG1411YRUZ

        OMO.#: OMO-ADG1411YRUZ-ANALOG-DEVICES

        		 Analog Switch ICs 1.8 Ohm 250mA iCMOS Quad SPST
        FDMD8540L

        Mfr.#: FDMD8540L

        OMO.#: OMO-FDMD8540L-ON-SEMICONDUCTOR

        		 MOSFET 2N-CH 40V 33A POWER
        Availability
        Stock:
        Available
        On Order:
        1985
        Enter Quantity:
        Current price of FDMD86100 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
        Reference price (USD)
        Quantity
        Unit Price
        Ext. Price
        1
        $2.78
        $2.78
        10
        $2.37
        $23.70
        100
        $2.05
        $205.00
        250
        $1.94
        $485.00
        500
        $1.74
        $870.00
        1000
        $1.47
        $1 470.00
        Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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