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SIHG33N65E-GE3

SIHG33N65E-GE3
Mfr. #:
SIHG33N65E-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 650V Vds 30V Vgs TO-247AC
Lifecycle:
New from this manufacturer.
Datasheet:
SIHG33N65E-GE3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHG33N65E-GE3 DatasheetSIHG33N65E-GE3 Datasheet (P4-P6)SIHG33N65E-GE3 Datasheet (P7)
ECAD Model:
More Information:
SIHG33N65E-GE3 more Information
Product Attribute
Attribute Value
Manufacturer:
Vishay
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-247AC-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
650 V
Id - Continuous Drain Current:
31.6 A
Rds On - Drain-Source Resistance:
95 mOhms
Vgs th - Gate-Source Threshold Voltage:
4 V
Vgs - Gate-Source Voltage:
30 V
Qg - Gate Charge:
114 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
313 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Reel
Series:
EF
Brand:
Vishay / Siliconix
Fall Time:
71 ns
Product Type:
MOSFET
Rise Time:
56 ns
Factory Pack Quantity:
25
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
105 ns
Typical Turn-On Delay Time:
32 ns
Tags
SIHG33, SIHG3, SIHG, SIH
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 650V 32.4A 3-Pin(3+Tab) TO-247AC
***et
Trans MOSFET N-CH 650V 32.4A 3-Pin TO-247AC
***i-Key
MOSFET N-CH 650V 32.4A TO-247AC
***ark
Mosfet, N-Ch, 650V, 32.4A, To-247Ac-3; Transistor Polarity:n Channel; Continuous Drain Current Id:32.4A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.09Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 650V, 32.4A, TO-247AC-3; Transistor Polarity:N Channel; Continuous Drain Current Id:32.4A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.09ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:313W; Transistor Case Style:TO-247AC; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:E-Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited
***nell
MOSFET, CA-N, 650V, 32.4A, TO-247AC-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:32.4A; Tensione Drain Source Vds:650V; Resistenza di Attivazione Rds(on):0.09ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:4V; Dissipazione di Potenza Pd:313W; Modello Case Transistor:TO-247AC; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:E-Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata
EF Series High Voltage Power MOSFETs
Vishay / Siliconix EF Series High Voltage Power MOSFETs with Fast Body Diode are N-Channel power MOSFETs with low reverse recovery charge (Qrr) than standard MOSFETs. The EF power MOSFETs come with low Qrr that allows the devices to avoid failure from shoot-through, thermal overstress, and provide low reverse recovery losses. These devices possess ultra-low on-resistance and gate charge that translate into extremely low conduction and switching losses to save energy in high-power, high-performance switch mode applications.
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
Part # Mfg. Description Stock Price
SIHG33N65E-GE3
DISTI # V36:1790_14664699		Vishay IntertechnologiesTrans MOSFET N-CH 650V 32.4A 3-Pin(3+Tab) TO-247AC0
  • 500000:$3.7410
  • 250000:$3.7460
  • 50000:$4.3670
  • 5000:$5.6300
  • 500:$5.8500
SIHG33N65E-GE3
DISTI # SIHG33N65E-GE3-ND		Vishay SiliconixMOSFET N-CH 650V 32.4A TO-247AC
RoHS: Compliant
Min Qty: 1
Container: Tube		868In Stock
  • 2500:$3.7456
  • 500:$4.4659
  • 100:$5.1285
  • 25:$5.9064
  • 10:$6.1950
  • 1:$6.8600
SIHG33N65E-GE3
DISTI # SIHG33N65E-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 650V 32.4A 3-Pin TO-247AC (Alt: SIHG33N65E-GE3)
RoHS: Compliant
Min Qty: 1		Europe - 50
  • 1000:€3.3900
  • 100:€3.4900
  • 500:€3.4900
  • 50:€3.5900
  • 25:€3.9900
  • 10:€4.8900
  • 1:€6.1900
SIHG33N65E-GE3
DISTI # SIHG33N65E-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 650V 32.4A 3-Pin TO-247AC - Tape and Reel (Alt: SIHG33N65E-GE3)
RoHS: Not Compliant
Min Qty: 500
Container: Reel		Americas - 0
  • 5000:$3.4900
  • 3000:$3.5900
  • 2000:$3.6900
  • 1000:$3.7900
  • 500:$3.8900
SIHG33N65E-GE3
DISTI # 78-SIHG33N65E-GE3		Vishay IntertechnologiesMOSFET 650V Vds 30V Vgs TO-247AC
RoHS: Compliant		0
  • 1:$6.8600
  • 10:$6.1700
  • 25:$5.6200
  • 100:$5.0700
  • 250:$4.6600
  • 500:$4.2500
  • 1000:$3.7000
SIHG33N65EGE3Vishay IntertechnologiesPower Field-Effect Transistor, 32.4A I(D), 650V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
RoHS: Compliant		500
    SIHG33N65E-GE3
    DISTI # 2576519    		Vishay IntertechnologiesMOSFET, N-CH, 650V, 32.4A, TO-247AC-36
    • 100:£3.8800
    • 50:£4.0900
    • 10:£4.3000
    • 5:£5.2300
    • 1:£5.7400
    SIHG33N65E-GE3
    DISTI # 2576519    		Vishay IntertechnologiesMOSFET, N-CH, 650V, 32.4A, TO-247AC-3
    RoHS: Compliant    		6
    • 100:$9.0700
    • 10:$11.0300
    • 1:$12.2500
    Image Part # Description
    SIHG33N65EF-GE3

    Mfr.#: SIHG33N65EF-GE3

    OMO.#: OMO-SIHG33N65EF-GE3

    		 MOSFET 650V Vds 30V Vgs TO-247AC
    SIHG33N60EF-GE3

    Mfr.#: SIHG33N60EF-GE3

    OMO.#: OMO-SIHG33N60EF-GE3

    		 MOSFET 600V Vds 30V Vgs TO-247AC
    SIHG33N60E-GE3

    Mfr.#: SIHG33N60E-GE3

    OMO.#: OMO-SIHG33N60E-GE3-VISHAY

    		 Darlington Transistors MOSFET 600V 99mOhm@10V 33A N-Ch E-SRS
    SIHG33N60EF-GE3

    Mfr.#: SIHG33N60EF-GE3

    OMO.#: OMO-SIHG33N60EF-GE3-VISHAY

    		 IGBT Transistors MOSFET 600V 98mOhms@10V 33A N-Ch MOSFET
    SIHG33N60E-E3

    Mfr.#: SIHG33N60E-E3

    OMO.#: OMO-SIHG33N60E-E3-VISHAY

    		 MOSFET N-CH 600V 33A TO247AC
    SIHG33N65EF-GE3

    Mfr.#: SIHG33N65EF-GE3

    OMO.#: OMO-SIHG33N65EF-GE3-VISHAY

    		 MOSFET N-CH 650V 31.6A TO-247AC
    SIHG33N60E

    Mfr.#: SIHG33N60E

    OMO.#: OMO-SIHG33N60E-1190

    		 New and Original
    SIHG33N60E-G3

    Mfr.#: SIHG33N60E-G3

    OMO.#: OMO-SIHG33N60E-G3-1190

    		 New and Original
    SIHG33N60E-GE3,SIHG33N60

    Mfr.#: SIHG33N60E-GE3,SIHG33N60

    OMO.#: OMO-SIHG33N60E-GE3-SIHG33N60-1190

    		 New and Original
    SIHG33N65E-GE3

    Mfr.#: SIHG33N65E-GE3

    OMO.#: OMO-SIHG33N65E-GE3-VISHAY

    		 Trans MOSFET N-CH 650V 32.4A 3-Pin(3+Tab) TO-247AC
    Availability
    Stock:
    Available
    On Order:
    4000
    Enter Quantity:
    Current price of SIHG33N65E-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $6.86
    $6.86
    10
    $6.17
    $61.70
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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