IXTQ32P20T

Product Attribute

Attribute Value

Manufacturer:

IXYS

Product Category:

MOSFET

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-3P-3

Number of Channels:

1 Channel

Transistor Polarity:

P-Channel

Vds - Drain-Source Breakdown Voltage:

200 V

Id - Continuous Drain Current:

32 A

Rds On - Drain-Source Resistance:

130 mOhms

Vgs th - Gate-Source Threshold Voltage:

2 V

Vgs - Gate-Source Voltage:

15 V

Qg - Gate Charge:

185 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

300 W

Configuration:

Single

Channel Mode:

Enhancement

Transistor Type:

1 P-Channel

Brand:

IXYS

Fall Time:

12 ns

Product Type:

MOSFET

Rise Time:

15 ns

Factory Pack Quantity:

30

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

57 ns

Typical Turn-On Delay Time:

32 ns

Tags

IXTQ3, IXTQ, IXT