BSC026N08NS5ATMA1

BSC026N08NS5ATMA1
Mfr. #:
BSC026N08NS5ATMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 80V 100A TDSON-8
Lifecycle:
New from this manufacturer.
Datasheet:
BSC026N08NS5ATMA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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ECAD Model:
More Information:
BSC026N08NS5ATMA1 more Information
Product Attribute
Attribute Value
Manufacturer
INFINEO
Product Category
Transistors - FETs, MOSFETs - Single
Packaging
Reel
Part-Aliases
BSC026N08NS5 SP001154276
Unit-Weight
0.017870 oz
Mounting-Style
SMD/SMT
Package-Case
TDSON-8
Technology
Si
Number-of-Channels
1 Channel
Configuration
Single
Transistor-Type
1 N-Channel
Pd-Power-Dissipation
156 W
Maximum-Operating-Temperature
+ 150 C
Minimum-Operating-Temperature
- 55 C
Fall-Time
16 ns
Rise-Time
14 ns
Vgs-Gate-Source-Voltage
+/- 20 V
Id-Continuous-Drain-Current
100 A
Vds-Drain-Source-Breakdown-Voltage
80 V
Vgs-th-Gate-Source-Threshold-Voltage
2.2 V
Rds-On-Drain-Source-Resistance
3.9 mOhms
Transistor-Polarity
N-Channel
Typical-Turn-Off-Delay-Time
47 ns
Typical-Turn-On-Delay-Time
18 ns
Qg-Gate-Charge
74 nC
Forward-Transconductance-Min
60 S
Channel-Mode
Enhancement
Tags
BSC026N0, BSC026, BSC02, BSC0, BSC
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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
BSC026N08NS5 Series 80 V 23 A OptiMOSTM5 Power-Transistor - PG-TDSON-8
***ark
Mosfet, N-Ch, 80V, 100A, Tdson; Transistor Polarity:n Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:80V; On Resistance Rds(On):0.0022Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipationrohs Compliant: Yes
***ineon
OptiMOS 5 80V, Infineons latest generation of power MOSFETs, are especially designed for synchronous rectification in telecom and server power supplies. In addition, these devices can also be utilized in other industrial applications such as solar, low voltage drives and adapters. Within seven different packages, the new OptiMOS 5 80V MOSFETs offer the industrys lowest R DS(on). | Summary of Features: Optimized for synchronous rectification; Ideal for high switching frequency; Output capacitance reduction of up to 44%; R DS(on) reduction of up to 44% | Benefits: Highest system efficiency; Reduced switching and conduction losses; Less paralleling required; Increased power density; Low voltage overshoot | Target Applications: Telecom; Server; Solar; Low voltage drives; Light electric vehicles; Adapter
OptiMOS™ 5 Power MOSFETs
Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.
Designing Power Systems
Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More
Part # Mfg. Description Stock Price
BSC026N08NS5ATMA1
DISTI # V72:2272_06378264
Infineon Technologies AGTrans MOSFET N-CH 80V 100A Automotive 8-Pin TDSON EP T/R
RoHS: Compliant
4304
  • 3000:$1.2330
  • 1000:$1.2880
  • 500:$1.5230
  • 250:$1.7150
  • 100:$1.7340
  • 25:$2.0930
  • 10:$2.2500
  • 1:$2.5270
BSC026N08NS5ATMA1
DISTI # BSC026N08NS5ATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 80V 23A 8TDSON
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
6In Stock
  • 1000:$1.5875
  • 500:$1.9159
  • 100:$2.4633
  • 10:$3.0650
  • 1:$3.3900
BSC026N08NS5ATMA1
DISTI # BSC026N08NS5ATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 80V 23A 8TDSON
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
6In Stock
  • 1000:$1.5875
  • 500:$1.9159
  • 100:$2.4633
  • 10:$3.0650
  • 1:$3.3900
BSC026N08NS5ATMA1
DISTI # BSC026N08NS5ATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 80V 23A 8TDSON
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)
On Order
  • 5000:$1.3818
BSC026N08NS5ATMA1
DISTI # 31274170
Infineon Technologies AGTrans MOSFET N-CH 80V 100A Automotive 8-Pin TDSON EP T/R
RoHS: Compliant
4304
  • 3000:$1.2740
  • 1000:$1.2940
  • 500:$1.5310
  • 250:$1.7250
  • 100:$1.7440
  • 25:$2.1070
  • 10:$2.2660
  • 5:$2.5460
BSC026N08NS5ATMA1
DISTI # BSC026N08NS5ATMA1/SAMPLE
Infineon Technologies AGTrans MOSFET N-CH 80V 100A 8-Pin SuperSO T/R - Tape and Reel (Alt: BSC026N08NS5ATMA1/SAMPLE)
RoHS: Compliant
Container: Reel
Americas - 0
    BSC026N08NS5ATMA1
    DISTI # BSC026N08NS5ATMA1
    Infineon Technologies AGTrans MOSFET N-CH 80V 100A 8-Pin SuperSO T/R - Tape and Reel (Alt: BSC026N08NS5ATMA1)
    RoHS: Compliant
    Min Qty: 5000
    Container: Reel
    Americas - 0
    • 5000:$1.2900
    • 10000:$1.2900
    • 20000:$1.1900
    • 30000:$1.1900
    • 50000:$1.1900
    BSC026N08NS5ATMA1
    DISTI # BSC026N08NS5ATMA1
    Infineon Technologies AGTrans MOSFET N-CH 80V 100A 8-Pin SuperSO T/R - Tape and Reel (Alt: BSC026N08NS5ATMA1)
    RoHS: Compliant
    Min Qty: 5000
    Container: Reel
    Americas - 0
    • 5000:$1.2900
    • 10000:$1.2900
    • 20000:$1.2900
    • 30000:$1.2900
    • 50000:$1.2900
    BSC026N08NS5ATMA1
    DISTI # BSC026N08NS5
    Infineon Technologies AGTrans MOSFET N-CH 80V 100A 8-Pin SuperSO T/R (Alt: BSC026N08NS5)
    RoHS: Compliant
    Min Qty: 5000
    Container: Tape and Reel
    Asia - 0
      BSC026N08NS5ATMA1
      DISTI # 13AC8328
      Infineon Technologies AGMOSFET, N-CH, 80V, 100A, TDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.0022ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power DissipationRoHS Compliant: Yes0
      • 1:$3.1000
      • 10:$2.6700
      • 25:$2.5600
      • 50:$2.4600
      • 100:$2.3500
      • 250:$2.2400
      • 500:$2.0400
      • 1000:$1.7500
      BSC026N08NS5ATMA1
      DISTI # 726-BSC026N08NS5ATMA
      Infineon Technologies AGMOSFET N-Ch 80V 100A TDSON-8
      RoHS: Compliant
      104
      • 1:$2.8500
      • 10:$2.4200
      • 100:$1.9400
      • 500:$1.7000
      • 1000:$1.4100
      • 2500:$1.3100
      • 5000:$1.2600
      BSC026N08NS5ATMA1
      DISTI # C1S322000662377
      Infineon Technologies AGMOSFETs4354
      • 250:$1.7250
      • 100:$1.7440
      • 25:$2.1070
      • 10:$2.2660
      • 1:$2.5460
      BSC026N08NS5ATMA1
      DISTI # 2725805
      Infineon Technologies AGMOSFET, N-CH, 80V, 100A, TDSON
      RoHS: Compliant
      0
      • 1:$5.4100
      • 10:$4.8900
      • 100:$3.9300
      • 500:$3.0600
      • 1000:$2.5400
      BSC026N08NS5ATMA1
      DISTI # 2725805
      Infineon Technologies AGMOSFET, N-CH, 80V, 100A, TDSON
      RoHS: Compliant
      0
      • 1:£2.5400
      • 10:£1.9100
      • 100:£1.5400
      • 250:£1.4400
      • 500:£1.3400
      Image Part # Description
      BSC026N04LSATMA1

      Mfr.#: BSC026N04LSATMA1

      OMO.#: OMO-BSC026N04LSATMA1

      MOSFET MV POWER MOS
      BSC026N08NS5ATMA1

      Mfr.#: BSC026N08NS5ATMA1

      OMO.#: OMO-BSC026N08NS5ATMA1

      MOSFET N-Ch 80V 100A TDSON-8
      BSC026N02KSGAUMA1

      Mfr.#: BSC026N02KSGAUMA1

      OMO.#: OMO-BSC026N02KSGAUMA1

      MOSFET N-Ch 20V 100A TDSON-8 OptiMOS 2
      BSC026N02KS G

      Mfr.#: BSC026N02KS G

      OMO.#: OMO-BSC026N02KS-G-1190

      MOSFET N-Ch 20V 100A TDSON-8 OptiMOS 2
      BSC026N02KSG

      Mfr.#: BSC026N02KSG

      OMO.#: OMO-BSC026N02KSG-1190

      Power Field-Effect Transistor, 25A I(D), 20V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
      BSC026N02KSGAUMA1

      Mfr.#: BSC026N02KSGAUMA1

      OMO.#: OMO-BSC026N02KSGAUMA1-INFINEON-TECHNOLOGIES

      MOSFET N-CH 20V 100A TDSON-8
      BSC026N04LS

      Mfr.#: BSC026N04LS

      OMO.#: OMO-BSC026N04LS-1190

      Trans MOSFET N-CH 40V 23A
      BSC026N04LSATMA1

      Mfr.#: BSC026N04LSATMA1

      OMO.#: OMO-BSC026N04LSATMA1-INFINEON-TECHNOLOGIES

      MOSFET N-CH 40V 23A 8TDSON
      BSC026N08NS5

      Mfr.#: BSC026N08NS5

      OMO.#: OMO-BSC026N08NS5-1190

      POWER FIELD-EFFECT TRANSISTOR, 23A I(D), 80V, 0.0026OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET
      BSC026N08NS5ATMA1

      Mfr.#: BSC026N08NS5ATMA1

      OMO.#: OMO-BSC026N08NS5ATMA1-INFINEON-TECHNOLOGIES

      MOSFET N-Ch 80V 100A TDSON-8
      Availability
      Stock:
      Available
      On Order:
      5000
      Enter Quantity:
      Current price of BSC026N08NS5ATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
      Reference price (USD)
      Quantity
      Unit Price
      Ext. Price
      1
      $1.78
      $1.78
      10
      $1.70
      $16.96
      100
      $1.61
      $160.65
      500
      $1.52
      $758.65
      1000
      $1.43
      $1 428.00
      Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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