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| PartNumber | BSC026N04LS | BSC026N02KS G | BSC026N02KSGAUMA1 |
| Description | MOSFET DIFFERENTIATED MOSFETS | MOSFET N-Ch 20V 100A TDSON-8 OptiMOS 2 | MOSFET N-Ch 20V 100A TDSON-8 OptiMOS 2 |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TDSON-8 | TDSON-8 | TDSON-8 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 40 V | 20 V | 20 V |
| Id Continuous Drain Current | 100 A | 100 A | 100 A |
| Rds On Drain Source Resistance | 2.1 mOhms | 2.1 mOhms | 2.1 mOhms |
| Vgs th Gate Source Threshold Voltage | 1.2 V | 700 mV | 700 mV |
| Vgs Gate Source Voltage | 20 V | 12 V | 12 V |
| Qg Gate Charge | 45 nC | 52.7 nC | 52.7 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 63 W | 78 W | 78 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | OptiMOS | OptiMOS | OptiMOS |
| Packaging | Reel | Reel | Reel |
| Height | 1.27 mm | 1.27 mm | 1.27 mm |
| Length | 5.9 mm | 5.9 mm | 5.9 mm |
| Series | OptiMOS 5 | OptiMOS 2 | OptiMOS 2 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 5.15 mm | 5.15 mm | 5.15 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Forward Transconductance Min | 85 S | 95 S | 95 S |
| Fall Time | 4 ns | 9 ns | 9 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 4 ns | 115 ns | 115 ns |
| Factory Pack Quantity | 5000 | 5000 | 5000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 37 ns | 52 ns | 52 ns |
| Typical Turn On Delay Time | 5 ns | 21 ns | 21 ns |
| Part # Aliases | BSC026N04LSATMA1 SP001067014 | BSC026N02KSGAUMA1 BSC26N2KSGXT SP000379664 | BSC026N02KS BSC26N2KSGXT G SP000379664 |
| Moisture Sensitive | - | Yes | Yes |
| Unit Weight | - | - | 0.070548 oz |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
BSC026N04LS | MOSFET DIFFERENTIATED MOSFETS | |
| BSC026N02KS G | MOSFET N-Ch 20V 100A TDSON-8 OptiMOS 2 | ||
| BSC026N04LSATMA1 | MOSFET MV POWER MOS | ||
| BSC026N08NS5ATMA1 | MOSFET N-Ch 80V 100A TDSON-8 | ||
| BSC026N02KSGAUMA1 | MOSFET N-Ch 20V 100A TDSON-8 OptiMOS 2 | ||
| BSC026NE2LS5ATMA1 | MOSFET LV POWER MOS | ||
| BSC026N02KSGAUMA1 | MOSFET N-CH 20V 100A TDSON-8 | ||
| BSC026N04LSATMA1 | MOSFET N-CH 40V 23A 8TDSON | ||
| BSC026NE2LS5ATMA1 | MOSFET LV POWER MOS | ||
| BSC026N08NS5ATMA1 | MOSFET N-Ch 80V 100A TDSON-8 | ||
| BSC026N02KS | New and Original | ||
| BSC026N02KS G | MOSFET N-Ch 20V 100A TDSON-8 OptiMOS 2 | ||
| BSC026N02KSG | Power Field-Effect Transistor, 25A I(D), 20V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSC026N04LS | Trans MOSFET N-CH 40V 23A | ||
| BSC026N08NS5 | POWER FIELD-EFFECT TRANSISTOR, 23A I(D), 80V, 0.0026OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | ||
| BSC026NE2LS5 | Trans MOSFET N-CH 25V PG-TDSON-8 T/R (Alt: BSC026NE2LS5) | ||
| BSC026NE2LS5ATMA1-CUT TAPE | New and Original |