SI6562CDQ-T1-GE3

SI6562CDQ-T1-GE3
Mfr. #:
SI6562CDQ-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET -20V Vds 12V Vgs TSSOP-8 N&P PAIR
Lifecycle:
New from this manufacturer.
Datasheet:
SI6562CDQ-T1-GE3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI6562CDQ-T1-GE3 DatasheetSI6562CDQ-T1-GE3 Datasheet (P4-P6)SI6562CDQ-T1-GE3 Datasheet (P7-P9)SI6562CDQ-T1-GE3 Datasheet (P10-P12)SI6562CDQ-T1-GE3 Datasheet (P13-P15)SI6562CDQ-T1-GE3 Datasheet (P16-P17)
ECAD Model:
More Information:
SI6562CDQ-T1-GE3 more Information
Product Attribute
Attribute Value
Manufacturer:
Vishay
Product Category:
MOSFET
RoHS:
E
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TSSOP-8
Number of Channels:
2 Channel
Transistor Polarity:
N-Channel, P-Channel
Vds - Drain-Source Breakdown Voltage:
20 V
Id - Continuous Drain Current:
6.7 A, 6.1 A
Rds On - Drain-Source Resistance:
22 mOhms, 30 mOhms
Vgs th - Gate-Source Threshold Voltage:
600 mV
Vgs - Gate-Source Voltage:
4.5 V
Qg - Gate Charge:
15 nC, 34 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
1.6 W, 1.7 W
Configuration:
Dual
Channel Mode:
Enhancement
Tradename:
TrenchFET
Packaging:
Reel
Series:
SI6
Transistor Type:
1 N-Channel, 1 P-Channel
Brand:
Vishay / Siliconix
Forward Transconductance - Min:
17 S, 22 S
Fall Time:
10 ns, 15 ns
Product Type:
MOSFET
Rise Time:
10 ns, 25 ns
Factory Pack Quantity:
3000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
25 ns, 45 ns
Typical Turn-On Delay Time:
12 ns, 30 ns
Part # Aliases:
SI6562CDQ-GE3
Unit Weight:
0.005573 oz
Tags
SI6562CDQ-T, SI6562CDQ, SI6562C, SI656, SI65, SI6
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We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Si6562CDQ Series 20 V 0.022 Ohm SMT Dual N & P Channel MOSFET - TSSOP-8
***ical
Trans MOSFET N/P-CH 20V 5.7A/5.1A 8-Pin TSSOP T/R
***ark
Mosfet, N & P Channel, 20V, 6.7A, Tssop-8, Full Reel; Transistor Polarity:complementary N And P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:6.7A; On Resistance Rds(On):0.18Ohm; Transistor Mounting:surface Mountrohs Compliant: No
Integrated MOSFET Solutions
Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. 
N & P Channel Pair Thermally Enhanced MOSFETs
Vishay N and P Channel Pair Thermally Enhanced MOSFETs combine the N-channel and P-channel MOSFET pairs into one single package. These N and P Channel MOSFETs are designed to minimize the ON-state Resistance (RDS(on)) while maintaining superior switching performance. In addition, combining both the N-channel and P-channel MOSFETs into a single IC saves PCB space and simplifies application design. 
Part # Mfg. Description Stock Price
SI6562CDQ-T1-GE3
DISTI # SI6562CDQ-T1-GE3CT-ND
Vishay SiliconixMOSFET N/P-CH 20V 6.7A 8-TSSOP
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
3025In Stock
  • 1000:$0.5013
  • 500:$0.6350
  • 100:$0.8189
  • 10:$1.0360
  • 1:$1.1700
SI6562CDQ-T1-GE3
DISTI # SI6562CDQ-T1-GE3DKR-ND
Vishay SiliconixMOSFET N/P-CH 20V 6.7A 8-TSSOP
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
3025In Stock
  • 1000:$0.5013
  • 500:$0.6350
  • 100:$0.8189
  • 10:$1.0360
  • 1:$1.1700
SI6562CDQ-T1-GE3
DISTI # SI6562CDQ-T1-GE3TR-ND
Vishay SiliconixMOSFET N/P-CH 20V 6.7A 8-TSSOP
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
On Order
  • 3000:$0.4543
SI6562CDQ-T1-GE3
DISTI # SI6562CDQ-T1-GE3
Vishay IntertechnologiesTrans MOSFET N/P-CH 20V 5.7A/5.1A 8-Pin TSSOP T/R - Tape and Reel (Alt: SI6562CDQ-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel
Americas - 3000
  • 3000:$0.4289
  • 6000:$0.4159
  • 12000:$0.3989
  • 18000:$0.3879
  • 30000:$0.3779
SI6562CDQ-T1-GE3
DISTI # 26T3807
Vishay IntertechnologiesTrans MOSFET N/P-CH 20V 5.7A/5.1A 8-Pin TSSOP T/R - Product that comes on tape, but is not reeled (Alt: 26T3807)
RoHS: Not Compliant
Min Qty: 1
Container: Ammo Pack
Americas - 0
  • 1:$1.0400
  • 25:$0.8500
  • 50:$0.7510
  • 100:$0.6520
  • 250:$0.6070
  • 500:$0.5610
  • 1000:$0.4430
SI6562CDQ-T1-GE3
DISTI # 26T3807
Vishay IntertechnologiesMOSFET, N & P CHANNEL, 20V, 6.7A, TSSOP-8,Transistor Polarity:N and P Channel,Continuous Drain Current Id:6.7A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.18ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:600mVRoHS Compliant: Yes0
  • 1000:$0.4430
  • 500:$0.5610
  • 250:$0.6070
  • 100:$0.6520
  • 50:$0.7510
  • 25:$0.8500
  • 1:$1.0400
SI6562CDQ-T1-GE3.
DISTI # 28AC2157
Vishay IntertechnologiesMOSFET, N & P CHANNEL, 20V, 6.7A, TSSOP-8, FULL REEL,Transistor Polarity:N and P Channel,Continuous Drain Current Id:6.7A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.18ohm,Rds(on) Test Voltage Vgs:4.5V,Product Range:- RoHS Compliant: No3000
  • 30000:$0.3660
  • 18000:$0.3720
  • 12000:$0.3780
  • 6000:$0.3930
  • 3000:$0.4030
  • 1:$0.4130
SI6562CDQ-T1-GE3
DISTI # 781-SI6562CDQ-GE3
Vishay IntertechnologiesMOSFET -20V Vds 12V Vgs TSSOP-8 N&P PAIR
RoHS: Compliant
835
  • 1:$1.0400
  • 10:$0.8500
  • 100:$0.6520
  • 500:$0.5610
  • 1000:$0.4430
  • 3000:$0.4130
  • 6000:$0.3930
  • 9000:$0.3780
SI6562CDQ-T1-GE3Vishay IntertechnologiesSi6562CDQ Series 20 V 0.022 Ohm SMT Dual N & P Channel MOSFET - TSSOP-8
RoHS: Compliant
9000Reel
  • 3000:$0.4450
SI6562CDQ-T1-GE3Vishay IntertechnologiesMOSFET -20V Vds 12V Vgs TSSOP-8 N&P PAIR
RoHS: Compliant
Americas - 12000
    SI6562CDQ-T1-GE3
    DISTI # 2458751
    Vishay IntertechnologiesMOSFET, N & P CHANNEL, 20V, 6.7A, TSSOP-
    RoHS: Compliant
    0
    • 9000:$0.5990
    • 6000:$0.6220
    • 3000:$0.6540
    • 1000:$0.7020
    • 500:$0.8880
    • 100:$1.0400
    • 10:$1.3500
    • 1:$1.6500
    SI6562CDQ-T1-GE3
    DISTI # 2335341
    Vishay IntertechnologiesMOSFET, N & P CHANNEL, 20V, 6.7A,TSSOP-6
    RoHS: Compliant
    3038
    • 1000:$0.8120
    • 500:$0.8880
    • 100:$1.0400
    • 10:$1.3500
    • 1:$1.6500
    SI6562CDQ-T1-GE3
    DISTI # 2335341
    Vishay IntertechnologiesMOSFET, N & P CHANNEL, 20V, 6.7A,TSSOP-6
    RoHS: Compliant
    0
    • 500:£0.4330
    • 250:£0.4670
    • 100:£0.5020
    • 25:£0.6540
    • 5:£0.7310
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    Availability
    Stock:
    31
    On Order:
    2014
    Enter Quantity:
    Current price of SI6562CDQ-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $1.03
    $1.03
    10
    $0.85
    $8.49
    100
    $0.65
    $65.10
    500
    $0.56
    $280.00
    1000
    $0.44
    $442.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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