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IPB017N08N5ATMA1

IPB017N08N5ATMA1
Mfr. #:
IPB017N08N5ATMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 80V 120A D2PAK-2
Lifecycle:
New from this manufacturer.
Datasheet:
IPB017N08N5ATMA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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ECAD Model:
More Information:
IPB017N08N5ATMA1 more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TO-263-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
80 V
Id - Continuous Drain Current:
120 A
Rds On - Drain-Source Resistance:
1.5 mOhms
Vgs th - Gate-Source Threshold Voltage:
2.2 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
223 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
375 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
OptiMOS
Packaging:
Reel
Height:
4.4 mm
Length:
10 mm
Series:
OptiMOS 5
Transistor Type:
1 N-Channel
Width:
9.25 mm
Brand:
Infineon Technologies
Forward Transconductance - Min:
114 S
Fall Time:
37 ns
Product Type:
MOSFET
Rise Time:
36 ns
Factory Pack Quantity:
1000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
102 ns
Typical Turn-On Delay Time:
40 ns
Part # Aliases:
IPB017N08N5 SP001132472
Unit Weight:
0.139332 oz
Tags
IPB017N0, IPB017, IPB01, IPB0, IPB
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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    A***Z
    A***Z
    TR

    AAAS117 ? what a aaas?

    2019-03-20
    E**g
    E**g
    RU

    Long gone, but the capacitors are good.

    2019-02-26
***ical
Trans MOSFET N-CH 80V 177A Automotive 3-Pin(2+Tab) D2PAK T/R
***ark
Mosfet, N-Ch, 80V, 120A, To-263; Transistor Polarity:n Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:80V; On Resistance Rds(On):0.0015Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes
***ineon
OptiMOS 5 80V, Infineons latest generation of power MOSFETs, are especially designed for synchronous rectification in telecom and server power supplies. In addition, these devices can also be utilized in other industrial applications such as solar, low voltage drives and adapters. Within seven different packages, the new OptiMOS 5 80V MOSFETs offer the industrys lowest R DS(on). | Summary of Features: Optimized for synchronous rectification; Ideal for high switching frequency; Output capacitance reduction of up to 44%; R DS(on) reduction of up to 44% | Benefits: Highest system efficiency; Reduced switching and conduction losses; Less paralleling required; Increased power density; Low voltage overshoot | Target Applications: Telecom; Server; Solar; Low voltage drives; Light electric vehicles; Adapter
OptiMOS™ 5 Power MOSFETs
Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.
Designing Power Systems
Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More
Part # Mfg. Description Stock Price
IPB017N08N5ATMA1
DISTI # V72:2272_06377001		Infineon Technologies AGTrans MOSFET N-CH 80V 177A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		990
  • 500:$3.2640
  • 250:$3.4750
  • 100:$3.7800
  • 25:$4.2990
  • 10:$4.3060
  • 1:$4.9780
IPB017N08N5ATMA1
DISTI # IPB017N08N5ATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 80V 120A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		2548In Stock
  • 500:$3.8353
  • 100:$4.7364
  • 10:$5.7760
  • 1:$6.4700
IPB017N08N5ATMA1
DISTI # IPB017N08N5ATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 80V 120A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		2548In Stock
  • 500:$3.8353
  • 100:$4.7364
  • 10:$5.7760
  • 1:$6.4700
IPB017N08N5ATMA1
DISTI # IPB017N08N5ATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 80V 120A D2PAK
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		2000In Stock
  • 1000:$3.1404
IPB017N08N5ATMA1
DISTI # 30283781		Infineon Technologies AGTrans MOSFET N-CH 80V 177A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		1000
  • 1000:$3.0148
IPB017N08N5ATMA1
DISTI # 31589258		Infineon Technologies AGTrans MOSFET N-CH 80V 177A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		990
  • 500:$3.2640
  • 250:$3.4750
  • 100:$3.7800
  • 25:$4.2990
  • 10:$4.3060
  • 3:$4.9780
IPB017N08N5ATMA1
DISTI # IPB017N08N5ATMA1		Infineon Technologies AGTrans MOSFET N-CH 80V 120A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB017N08N5ATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 1000:$2.8900
  • 2000:$2.7900
  • 4000:$2.6900
  • 6000:$2.5900
  • 10000:$2.4900
IPB017N08N5ATMA1
DISTI # 13AC9021		Infineon Technologies AGMOSFET, N-CH, 80V, 120A, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:120A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.0015ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes637
  • 1:$5.4000
  • 10:$4.5900
  • 25:$4.3900
  • 50:$4.1800
  • 100:$3.9800
  • 250:$3.7800
  • 500:$3.3900
IPB017N08N5
DISTI # 726-IPB017N08N5		Infineon Technologies AGMOSFET N-Ch 80V 120A D2PAK-2
RoHS: Compliant		1296
  • 1:$5.4000
  • 10:$4.5900
  • 100:$3.9800
  • 250:$3.7800
  • 500:$3.3900
  • 1000:$2.8600
IPB017N08N5ATMA1
DISTI # 726-IPB017N08N5ATMA1		Infineon Technologies AGMOSFET N-Ch 80V 120A D2PAK-2
RoHS: Compliant		1296
  • 1:$5.4000
  • 10:$4.5900
  • 100:$3.9800
  • 250:$3.7800
  • 500:$3.3900
  • 1000:$2.8600
IPB017N08N5ATMA1
DISTI # 2725834		Infineon Technologies AGMOSFET, N-CH, 80V, 120A, TO-263
RoHS: Compliant		725
  • 500:£2.6200
  • 250:£2.9100
  • 100:£3.0700
  • 10:£3.5400
  • 1:£4.6200
IPB017N08N5ATMA1
DISTI # 2725834		Infineon Technologies AGMOSFET, N-CH, 80V, 120A, TO-263
RoHS: Compliant		587
  • 1:$10.3200
  • 10:$9.2100
  • 100:$7.5500
  • 500:$6.1200
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Availability
Stock:
Available
On Order:
1984
Enter Quantity:
Current price of IPB017N08N5ATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$5.39
$5.39
10
$4.58
$45.80
100
$3.97
$397.00
250
$3.77
$942.50
500
$3.38
$1 690.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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