We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
Email: info@omo-ic.com
Part # | Mfg. | Description | Stock | Price |
---|---|---|---|---|
BSC123N10LSGATMA1 DISTI # BSC123N10LSGATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 100V 71A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 11954In Stock |
|
BSC123N10LSGATMA1 DISTI # BSC123N10LSGATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 100V 71A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 11954In Stock |
|
BSC123N10LSGATMA1 DISTI # BSC123N10LSGATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 100V 71A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR) | 5000In Stock |
|
BSC123N10LSGATMA1 DISTI # BSC123N10LSGATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 100V 10.6A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC123N10LSGATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel | Americas - 0 |
|
BSC123N10LSGATMA1 DISTI # SP000379612 | Infineon Technologies AG | Trans MOSFET N-CH 100V 10.6A 8-Pin TDSON T/R (Alt: SP000379612) RoHS: Compliant Min Qty: 5000 Container: Tape and Reel | Europe - 0 |
|
BSC123N10LSGATMA1 DISTI # 52R3478 | Infineon Technologies AG | MOSFET, N CHANNEL, 100V, 7A, PG-TSDSON-8,Transistor Polarity:N Channel,Continuous Drain Current Id:71A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.01ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.85V RoHS Compliant: Yes | 0 |
|
BSC123N10LSGATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 10.6A I(D), 100V, 0.0123ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 550 |
|
BSC123N10LS G DISTI # 726-BSC123N10LSG | Infineon Technologies AG | MOSFET N-Ch 100V 71A TDSON-8 OptiMOS 2 RoHS: Compliant | 2794 |
|
BSC123N10LSGATMA1 DISTI # 726-BSC123N10LSGATMA | Infineon Technologies AG | MOSFET N-Ch 100V 71A TDSON-8 OptiMOS 2 RoHS: Compliant | 0 |
|
BSC123N10LSGATMA1 DISTI # 7545305P | Infineon Technologies AG | MOSFET N-CH 100V 10.6A OPTIMOS2 TDSON8, RL | 2462 |
|
BSC123N10LSG | Infineon Technologies AG | 10.6 A, 100 V, 0.0123 ohm, N-CHANNEL, Si, POWER, MOSFET | 71 |
|
BSC123N10LSG | Infineon Technologies AG | 100 | ||
BSC123N10LSGATMA1 DISTI # 1775470 | Infineon Technologies AG | MOSFET, N CH, 71A, 100V, PG-TDSON-8 RoHS: Compliant | 3564 |
|
BSC123N10LSG | Infineon Technologies AG | 100V,12.3m,71A,N-Channel Power MOSFET | 100 |
|
BSC123N10LS G DISTI # C1S322000087178 | Infineon Technologies AG | Trans MOSFET N-CH 100V 10.6A 8-Pin TDSON EP RoHS: Compliant | 197 |
|
BSC123N10LSGATMA1 DISTI # 1775470 | Infineon Technologies AG | MOSFET, N CH, 71A, 100V, PG-TDSON-8 RoHS: Compliant | 3265 |
|
Image | Part # | Description |
---|---|---|
Mfr.#: BSC123N08NS3 G OMO.#: OMO-BSC123N08NS3-G |
MOSFET N-Ch 80V 55A TDSON-8 OptiMOS 3 | |
Mfr.#: BSC123N10LS G OMO.#: OMO-BSC123N10LS-G |
MOSFET N-Ch 100V 71A TDSON-8 OptiMOS 2 | |
Mfr.#: BSC123N10LSGATMA1 OMO.#: OMO-BSC123N10LSGATMA1 |
MOSFET N-Ch 100V 71A TDSON-8 OptiMOS 2 | |
Mfr.#: BSC123N08N OMO.#: OMO-BSC123N08N-1190 |
New and Original | |
Mfr.#: BSC123N08NS3 G OMO.#: OMO-BSC123N08NS3-G-1190 |
Trans MOSFET N-CH 80V 11A 8-Pin TDSON EP | |
Mfr.#: BSC123N08NS3GATMA1 |
MOSFET N-CH 80V 55A TDSON-8 | |
Mfr.#: BSC123N08NS3GATMA1 , TDZ |
New and Original | |
Mfr.#: BSC123N10LS OMO.#: OMO-BSC123N10LS-1190 |
New and Original | |
Mfr.#: BSC123N10LS G OMO.#: OMO-BSC123N10LS-G-1190 |
New and Original | |
Mfr.#: BSC123N10LS G OMO.#: OMO-BSC123N10LS-G-317 |
RF Bipolar Transistors MOSFET N-Ch 100V 71A TDSON-8 OptiMOS 2 |