SI3430DV-T1-E3

Mfr. #:: SI3430DV-T1-E3
Manufacturer:: Vishay
Description:: Trans MOSFET N-CH 100V 1.8A 6-Pin TSOP T/R
Lifecycle:: New from this manufacturer.
Datasheet:: SI3430DV-T1-E3 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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More Information:: SI3430DV-T1-E3 more Information

Product Attribute
Attribute Value

Manufacturer: Vishay Siliconix

Product Category: FETs - Single

Series: -

Packaging: Digi-ReelR Alternate Packaging

Part-Aliases: SI3430DV-E3

Unit-Weight: 0.000705 oz

Mounting-Style: SMD/SMT

Package-Case: SOT-23-6 Thin, TSOT-23-6

Technology: Si

Operating-Temperature: -55°C ~ 150°C (TJ)

Mounting-Type: Surface Mount

Number-of-Channels: 1 Channel

Supplier-Device-Package: 6-TSOP

Configuration: Single

FET-Type: MOSFET N-Channel, Metal Oxide

Power-Max: 1.14W

Transistor-Type: 1 N-Channel

Drain-to-Source-Voltage-Vdss: 100V

Input-Capacitance-Ciss-Vds: -

FET-Feature: Standard

Current-Continuous-Drain-Id-25°C: 1.8A (Ta)

Rds-On-Max-Id-Vgs: 170 mOhm @ 2.4A, 10V

Vgs-th-Max-Id: 2V @ 250μA (Min)

Gate-Charge-Qg-Vgs: 6.6nC @ 10V

Pd-Power-Dissipation: 1.14 W

Maximum-Operating-Temperature: + 150 C

Minimum-Operating-Temperature: - 55 C

Fall-Time: 11 ns

Rise-Time: 11 ns

Vgs-Gate-Source-Voltage: 20 V

Id-Continuous-Drain-Current: 2.4 A

Vds-Drain-Source-Breakdown-Voltage: 100 V

Rds-On-Drain-Source-Resistance: 170 mOhms

Transistor-Polarity: N-Channel

Typical-Turn-Off-Delay-Time: 16 ns

Typical-Turn-On-Delay-Time: 9 ns

Channel-Mode: Enhancement

Tags: SI3430, SI343, SI34, SI3

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI3430DV-T1-E3 Description

***ure Electronics: Single N-Channel 100 V 0.17 Ohms Surface Mount Power Mosfet - TSOP-6

***et Europe: Trans MOSFET N-CH 100V 1.8A 6-Pin TSOP T/R

***Components: MOSFET N-Channel 100V 1.8A TSOP6

***i-Key: MOSFET N-CH 100V 1.8A 6-TSOP

***ronik: N-CHANNEL-FET 2,4A 100V TSOP-6 RoHSconf

***ser: N-Channel MOSFETs 100V 8A 2W

***ponent Sense: MOSFET 100V 8A 2W

***ied Electronics & Automation: TRANSITOR, SI2323DS

***: 100V, 170 MOHMS@10V

***ark: Transistor Polarity:n Channel; Continuous Drain Current Id:1.8A; Drain Source Voltage Vds:100V; On Resistance Rds(On):0.17Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:1.14W; No. Of Pins:6Pins Rohs Compliant: No

SI3430DV-T1-E3 More Information

Si3 MOSFETs: Vishay/Siliconix Si3 MOSFETs are a TrenchFET® power MOSFETs operate in an enhancement mode. These Si3 MOSFETs are available in N-channel, P-channel, and N- and P-channel with ultra-low RDS(ON) for high-efficiency. These MOSFETs are also available in different VGS and VDS ranges. The Si3 MOSFETs incorporate Si technology and operate at a temperature ranging from -55ºC to 150ºC. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More

Market price

Part #	Mfg.	Description	Stock	Price
SI3430DV-T1-E3 DISTI # V72:2272_07433160	Vishay Intertechnologies	Trans MOSFET N-CH 100V 1.8A 6-Pin TSOP T/R RoHS: Compliant	49	25:$0.8309 10:$0.8590 1:$0.9585
SI3430DV-T1-E3 DISTI # SI3430DV-T1-E3TR-ND	Vishay Siliconix	MOSFET N-CH 100V 1.8A 6-TSOP RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	On Order	3000:$0.4500
SI3430DV-T1-E3 DISTI # SI3430DV-T1-E3CT-ND	Vishay Siliconix	MOSFET N-CH 100V 1.8A 6-TSOP RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	1000:$0.4966 500:$0.6290 100:$0.8111 10:$1.0260 1:$1.1600
SI3430DV-T1-E3 DISTI # SI3430DV-T1-E3DKR-ND	Vishay Siliconix	MOSFET N-CH 100V 1.8A 6-TSOP RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	1000:$0.4966 500:$0.6290 100:$0.8111 10:$1.0260 1:$1.1600
SI3430DV-T1-E3 DISTI # SI3430DV-T1-E3	Vishay Intertechnologies	Trans MOSFET N-CH 100V 1.8A 6-Pin TSOP T/R - Cut TR (SOS) (Alt: SI3430DV-T1-E3) RoHS: Not Compliant Min Qty: 1 Container: Cut Tape	Americas - 61	1:$0.8579 30:$0.8069 75:$0.8049 150:$0.7699 375:$0.6689 750:$0.5459 1500:$0.5439
SI3430DV-T1-E3 DISTI # SI3430DV-T1-E3	Vishay Intertechnologies	Trans MOSFET N-CH 100V 1.8A 6-Pin TSOP T/R - Tape and Reel (Alt: SI3430DV-T1-E3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.5239 6000:$0.5079 12000:$0.4869 18000:$0.4739 30000:$0.4609
SI3430DV-T1-E3 DISTI # 06J7594	Vishay Intertechnologies	N CHANNEL MOSFET,Transistor Polarity:N Channel,Continuous Drain Current Id:1.8A,Drain Source Voltage Vds:100V,On Resistance Rds(on):170mohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power Dissipation Pd:1.14W , RoHS Compliant: Yes	0	1:$1.2100 10:$1.0700 25:$0.9980 50:$0.9230 100:$0.8480 500:$0.6570 1000:$0.5190
SI3430DV-T1-E3 DISTI # 65K1923	Vishay Intertechnologies	N CHANNEL MOSFET, 100V, 1.8A, TSOP, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:1.8A,Drain Source Voltage Vds:100V,On Resistance Rds(on):185mohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V , RoHS Compliant: Yes	0	1:$0.4700 3000:$0.4700
SI3430DV-T1-E3. DISTI # 15AC0293	Vishay Intertechnologies	Transistor Polarity:N Channel,Continuous Drain Current Id:1.8A,Drain Source Voltage Vds:100V,On Resistance Rds(on):170mohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power Dissipation Pd:1.14W,No. of Pins:6Pins , RoHS Compliant: No	0	1:$0.4700 3000:$0.4700
SI3430DV-T1-E3 DISTI # 781-SI3430DV-E3	Vishay Intertechnologies	MOSFET 100V 8A 2W RoHS: Compliant	360	1:$1.2600 10:$1.0400 100:$0.7940 500:$0.6820 1000:$0.6000 3000:$0.5990
SI3430DV-T1 DISTI # 781-SI3430DV	Vishay Intertechnologies	MOSFET 100V 8A 2W RoHS: Not compliant	0
SI3430DV-T1-E3	Vishay Intertechnologies	1800 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET	16	5:$1.0820 1:$1.3525
SI3430DV-T1-E3	Vishay Intertechnologies	1800 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET	292	81:$0.4500 18:$0.7500 1:$1.5000
SI3430DV-T1-E3	Vishay BLH		365	5:$1.1250 19:$0.7313 70:$0.4219 239:$0.3600
SI3430DV-T1-E3.	Vishay Intertechnologies	MOSFET 100V 8A 2W RoHS: Compliant	Americas - 530	10:$0.7040
SI3430DV-T1-E3	Vishay Intertechnologies	MOSFET 100V 8A 2W RoHS: Compliant	Americas - Stock
SI3430DV-T1-E3 DISTI # C1S803600844371	Vishay Intertechnologies	MOSFETs RoHS: Compliant	49	25:$0.8309 10:$0.8590

Image	Part #	Description
	Mfr.#: SI3430DV-T1-GE3 OMO.#: OMO-SI3430DV-T1-GE3	MOSFET 100V 2.4A 2.0W 170mohm @ 10V
	Mfr.#: SI3430DV-T1-E3 OMO.#: OMO-SI3430DV-T1-E3	MOSFET 100V, 170 MOHMS@10V
	Mfr.#: SI3430DV-T1-GE3 OMO.#: OMO-SI3430DV-T1-GE3-VISHAY	IGBT Transistors MOSFET 100V 2.4A 2.0W 170mohm @ 10V
	Mfr.#: SI3430DV OMO.#: OMO-SI3430DV-1190	New and Original
	Mfr.#: SI3430DV-T1-E3 OMO.#: OMO-SI3430DV-T1-E3-VISHAY	Trans MOSFET N-CH 100V 1.8A 6-Pin TSOP T/R

SI3430DV-T1-E3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes