SI3430DV-T1-GE3

Mfr. #:: SI3430DV-T1-GE3
Manufacturer:: Vishay
Description:: IGBT Transistors MOSFET 100V 2.4A 2.0W 170mohm @ 10V
Lifecycle:: New from this manufacturer.
Datasheet:: SI3430DV-T1-GE3 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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ECAD Model:
More Information:: SI3430DV-T1-GE3 more Information

Product Attribute
Attribute Value

Manufacturer: VISHAY

Product Category: IC Chips

Packaging: Reel

Part-Aliases: SI3430DV-GE3

Unit-Weight: 0.000705 oz

Mounting-Style: SMD/SMT

Package-Case: TSOP-6

Technology: Si

Number-of-Channels: 1 Channel

Configuration: Single

Transistor-Type: 1 N-Channel

Pd-Power-Dissipation: 1.14 W

Maximum-Operating-Temperature: + 150 C

Minimum-Operating-Temperature: - 55 C

Fall-Time: 9 ns

Rise-Time: 11 ns

Vgs-Gate-Source-Voltage: 20 V

Id-Continuous-Drain-Current: 2.4 A

Vds-Drain-Source-Breakdown-Voltage: 100 V

Rds-On-Drain-Source-Resistance: 170 mOhms

Transistor-Polarity: N-Channel

Typical-Turn-Off-Delay-Time: 16 ns

Typical-Turn-On-Delay-Time: 9 ns

Channel-Mode: Enhancement

Tags: SI3430, SI343, SI34, SI3

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI3430DV-T1-GE3 Description

***ical: Trans MOSFET N-CH 100V 1.8A 6-Pin TSOP T/R

***nell: N CHANNEL MOSFET, 100V, 2.4A, TSOP-6

***ment14 APAC: N CHANNEL MOSFET, 100V, 2.4A, TSOP-6; Tr; N CHANNEL MOSFET, 100V, 2.4A, TSOP-6; Transistor Polarity:N Channel; Continuous Drain Current Id:2.4A; Drain Source Voltage Vds:100V; On Resistance Rds(on):170mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V

SI3430DV-T1-GE3 More Information

Si3 MOSFETs: Vishay/Siliconix Si3 MOSFETs are a TrenchFET® power MOSFETs operate in an enhancement mode. These Si3 MOSFETs are available in N-channel, P-channel, and N- and P-channel with ultra-low RDS(ON) for high-efficiency. These MOSFETs are also available in different VGS and VDS ranges. The Si3 MOSFETs incorporate Si technology and operate at a temperature ranging from -55ºC to 150ºC. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More

Market price

Part #	Mfg.	Description	Stock	Price
SI3430DV-T1-GE3 DISTI # 21256746	Vishay Intertechnologies	Trans MOSFET N-CH 100V 1.8A 6-Pin TSOP T/R RoHS: Compliant	838	500:$0.2214 323:$0.2246
SI3430DV-T1-GE3 DISTI # SI3430DV-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CH 100V 1.8A 6-TSOP RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1159In Stock	1000:$0.4966 500:$0.6290 100:$0.8111 10:$1.0260 1:$1.1600
SI3430DV-T1-GE3 DISTI # SI3430DV-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CH 100V 1.8A 6-TSOP RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	1159In Stock	1000:$0.4966 500:$0.6290 100:$0.8111 10:$1.0260 1:$1.1600
SI3430DV-T1-GE3 DISTI # SI3430DV-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CH 100V 1.8A 6-TSOP RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Temporarily Out of Stock	3000:$0.4500
SI3430DV-T1-GE3 DISTI # SI3430DV-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 100V 1.8A 6-Pin TSOP T/R - Tape and Reel (Alt: SI3430DV-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.4659 6000:$0.4639 12000:$0.4629 18000:$0.4609 30000:$0.4599
SI3430DV-T1-GE3 DISTI # SI3430DV-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 100V 1.8A 6-Pin TSOP T/R (Alt: SI3430DV-T1-GE3) RoHS: Compliant Min Qty: 1 Container: Tape and Reel	Europe - 0	1:€0.6869 10:€0.4689 25:€0.4029 50:€0.3719 100:€0.3579 500:€0.3529 1000:€0.3469
SI3430DV-T1-GE3 DISTI # 26R1863	Vishay Intertechnologies	Trans MOSFET N-CH 100V 1.8A 6-Pin TSOP T/R - Product that comes on tape, but is not reeled (Alt: 26R1863) RoHS: Not Compliant Min Qty: 1 Container: Ammo Pack	Americas - 0	1:$1.2600 25:$1.0400 50:$0.9170 100:$0.7940 250:$0.7380 500:$0.6820 1000:$0.5390
SI3430DV-T1-GE3 DISTI # 26R1863	Vishay Intertechnologies	N CHANNEL MOSFET, 100V, 2.4A, TSOP-6,Transistor Polarity:N Channel,Continuous Drain Current Id:2.4A,Drain Source Voltage Vds:100V,On Resistance Rds(on):170mohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V , RoHS Compliant: Yes	838	1:$0.1550 25:$0.1550 50:$0.1550 100:$0.1550 250:$0.1550 500:$0.1550 1000:$0.1550
SI3430DV-T1-GE3 DISTI # 15R4923	Vishay Intertechnologies	N CH MOSFET,Transistor Polarity:N Channel,Continuous Drain Current Id:2.4A,Drain Source Voltage Vds:100V,On Resistance Rds(on):170mohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power Dissipation Pd:2W , RoHS Compliant: Yes	0	1:$0.5100 3000:$0.5070 6000:$0.4830 12000:$0.4270
SI3430DV-T1-GE3 DISTI # 781-SI3430DV-GE3	Vishay Intertechnologies	MOSFET 100V 2.4A 2.0W 170mohm @ 10V RoHS: Compliant	3280	1:$1.2600 10:$1.0400 100:$0.7940 500:$0.6820 1000:$0.5390 3000:$0.5030 6000:$0.4780 9000:$0.4670
SI3430DV-T1-GE3 DISTI # 1871903	Vishay Intertechnologies	N CHANNEL MOSFET, 100V, 2.4A, TSOP-6 RoHS: Compliant	838	1:$1.9800
SI3430DV-T1-GE3 DISTI # 1871903	Vishay Intertechnologies	N CHANNEL MOSFET, 100V, 2.4A, TSOP-6 RoHS: Compliant	838	1:£1.1100 25:£0.9210 50:£0.8130 100:£0.7030 250:£0.6530

Image	Part #	Description
	Mfr.#: SI3430DV-T1-GE3 OMO.#: OMO-SI3430DV-T1-GE3	MOSFET 100V 2.4A 2.0W 170mohm @ 10V
	Mfr.#: SI3430DV-T1-E3 OMO.#: OMO-SI3430DV-T1-E3	MOSFET 100V, 170 MOHMS@10V
	Mfr.#: SI3430DV-T1-GE3 OMO.#: OMO-SI3430DV-T1-GE3-VISHAY	IGBT Transistors MOSFET 100V 2.4A 2.0W 170mohm @ 10V
	Mfr.#: SI3430DV OMO.#: OMO-SI3430DV-1190	New and Original
	Mfr.#: SI3430DV-T1-E3 OMO.#: OMO-SI3430DV-T1-E3-VISHAY	Trans MOSFET N-CH 100V 1.8A 6-Pin TSOP T/R

SI3430DV-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes