IPD50N06S4L12ATMA2

Mfr. #:: IPD50N06S4L12ATMA2
Manufacturer:: Infineon Technologies
Description:: MOSFET MOSFET
Lifecycle:: New from this manufacturer.
Datasheet:: IPD50N06S4L12ATMA2 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: IPD50N06S4L12ATMA2 Datasheet IPD50N06S4L12ATMA2 Datasheet (P4-P6)IPD50N06S4L12ATMA2 Datasheet (P7-P9)
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: PG-TO-252-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 60 V

Id - Continuous Drain Current:: 50 A

Rds On - Drain-Source Resistance:: 7.8 mOhms

Vgs th - Gate-Source Threshold Voltage:: 1.7 V

Vgs - Gate-Source Voltage:: 10 V

Qg - Gate Charge:: 49 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 175 C

Pd - Power Dissipation:: 50 W

Configuration:: Single

Channel Mode:: Enhancement

Qualification:: AEC-Q101

Packaging:: Reel

Height:: 2.3 mm

Length:: 6.5 mm

Series:: IPD50N06

Transistor Type:: 1 N-Channel

Width:: 6.22 mm

Brand:: Infineon Technologies

Forward Transconductance - Min:: -

Fall Time:: 5 ns

Product Type:: MOSFET

Rise Time:: 2 ns

Factory Pack Quantity:: 2500

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 25 ns

Typical Turn-On Delay Time:: 6 ns

Part # Aliases:: IPD50N06S4L-12 IPD5N6S4L12XT SP001028640

Unit Weight:: 0.139332 oz

Tags: IPD50N06S4L, IPD50N06S4, IPD50N06S, IPD50N06, IPD50N0, IPD50N, IPD50, IPD5, IPD

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPD50N06S4L12ATMA2 Description

***ure Electronics: IPD50N06S4L Series 60 V 50 A 12 mOhm OptiMOS®-T2 Power-Transistor -PG-TO252-3-11

***p One Stop Japan: Trans MOSFET N-CH 60V 50A Automotive 3-Pin(2+Tab) DPAK T/R

***et: Trans MOSFET N-CH 60V 50A 3-Pin(2+Tab) TO-252

***ark: Mosfet, Aec-Q101, N-Ch, 60V, 50A, To-252; Msl:msl 1 - Unlimited; Svhc:no Svhc (07-Jul-2017) Rohs Compliant: Yes

***ronik: MOSFET 60V 12.0mOHM AECQ TO252 RoHSconf

***et Europe: MOSFET N-Ch 60V 50A DPAK-2 OptiMOS-T2

***Components: MOSFET N-Ch 50A 60V OptiMOS-T2 TO252

*** Source Electronics: OptiMOS-T2 Power-Transistor

***i-Key: MOSFET N-CH 60V 50A TO252-3-11

***ment14 APAC: Prices include import duty and tax. MOSFET, AEC-Q101, N-CH, 60V, 50A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0096ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power Dissipation Pd:50W; Transistor Case Style:TO-252; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:OptiMOS T2 Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)

***ineon: Summary of Features: N-channel - Enhancement mode; AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green Product (RoHS compliant); 100% Avalanche tested | Benefits: world's lowest RDS at 60V (on); highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: Valves control; Solenoids control; Lighting; Single-ended motors

***nell: MOSFET, AEC-Q101, CA-N, 60V, 50A, TO-252; Polarità Transistor:Canale N; Corrente Continua di Drain Id:50A; Tensione Drain Source Vds:60V; Resistenza di Attivazione Rds(on):0.0096ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:1.7V; Dissipazione di Potenza Pd:50W; Modello Case Transistor:TO-252; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:OptiMOS T2 Series; Standard di Qualifica Automotive:AEC-Q101; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)

Market price

Part #	Mfg.	Description	Stock	Price
IPD50N06S4L12ATMA2 DISTI # V72:2272_06390901	Infineon Technologies AG	Trans MOSFET N-CH 60V 50A Automotive 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	10	10:$0.7426 1:$0.8808
IPD50N06S4L12ATMA2 DISTI # IPD50N06S4L12ATMA2CT-ND	Infineon Technologies AG	MOSFET N-CH 60V 50A TO252-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	8791In Stock	1000:$0.3796 500:$0.4746 100:$0.6003 10:$0.7830 1:$0.8900
IPD50N06S4L12ATMA2 DISTI # IPD50N06S4L12ATMA2DKR-ND	Infineon Technologies AG	MOSFET N-CH 60V 50A TO252-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	8791In Stock	1000:$0.3796 500:$0.4746 100:$0.6003 10:$0.7830 1:$0.8900
IPD50N06S4L12ATMA2 DISTI # IPD50N06S4L12ATMA2TR-ND	Infineon Technologies AG	MOSFET N-CH 60V 50A TO252-3 RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	7500In Stock	25000:$0.2918 12500:$0.2995 5000:$0.3110 2500:$0.3340
IPD50N06S4L12ATMA2 DISTI # 33708236	Infineon Technologies AG	Trans MOSFET N-CH 60V 50A Automotive 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	85000	12500:$0.3041 5000:$0.3079 2500:$0.3307
IPD50N06S4L12ATMA2 DISTI # IPD50N06S4L12ATMA2	Infineon Technologies AG	Trans MOSFET N-CH 60V 50A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD50N06S4L12ATMA2) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	25000:$0.3099 15000:$0.3159 10000:$0.3269 5000:$0.3389 2500:$0.3519
IPD50N06S4L12ATMA2640 DISTI # IPD50N06S4L12ATMA2640	Infineon Technologies AG	- Bulk (Alt: IPD50N06S4L12ATMA2640) Min Qty: 1316 Container: Bulk	Americas - 0
IPD50N06S4L12ATMA2 DISTI # 43AC3269	Infineon Technologies AG	MOSFET, AEC-Q101, N-CH, 60V, 50A, TO-252,MSL:MSL 1 - Unlimited,SVHC:No SVHC (07-Jul-2017) RoHS Compliant: Yes	0	1000:$0.3560 500:$0.3850 250:$0.4140 100:$0.4430 50:$0.5250 25:$0.6060 10:$0.6880 1:$0.8180
IPD50N06S4L12ATMA2 DISTI # 726-IPD50N06S4L12ATM	Infineon Technologies AG	MOSFET MOSFET RoHS: Compliant	10777	1:$0.9100 10:$0.7570 100:$0.4880 1000:$0.3900 2500:$0.3290 10000:$0.3170 25000:$0.3050
IPD50N06S4L-12 DISTI # 726-IPD50N06S4L-12	Infineon Technologies AG	MOSFET N-Ch 60V 50A DPAK-2 OptiMOS-T2 RoHS: Compliant	0
IPD50N06S4L12ATMA2640	Infineon Technologies AG	RoHS: Not Compliant	16893	1000:$0.2500 500:$0.2600 100:$0.2700 25:$0.2900 1:$0.3100
IPD50N06S4L12ATMA2 DISTI # IPD50N06S4L12	Infineon Technologies AG	Transistor: N-MOSFET,OptiMOS™ T2,unipolar,60V,36A,50W	2558	500:$0.3300 100:$0.3600 25:$0.3900 5:$0.4500 1:$0.6000
IPD50N06S4L12ATMA2 DISTI # 2803392	Infineon Technologies AG	MOSFET, AEC-Q101, N-CH, 60V, 50A, TO-252	2547	500:£0.2680 250:£0.3050 100:£0.3420 10:£0.5820 1:£0.7210
IPD50N06S4L12ATMA2 DISTI # 2803392	Infineon Technologies AG	MOSFET, AEC-Q101, N-CH, 60V, 50A, TO-252 RoHS: Compliant	2501	5000:$0.4200 1000:$0.4420 500:$0.4680 250:$0.5400 100:$0.6400 25:$0.7840 5:$0.9000
IPD50N06S4L12ATMA2 DISTI # XSKDRABV0050745	Infineon Technologies AG	RoHS: Compliant	17500 in Stock0 on Order	17500:$0.4360 2500:$0.4671

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Availability

Stock:: Available
On Order:: 1993
Enter Quantity:

Current price of IPD50N06S4L12ATMA2 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$0.91~~; ~~$0.91~~

10: ~~$0.76~~; ~~$7.57~~

100: ~~$0.49~~; ~~$48.80~~

1000: ~~$0.39~~; ~~$390.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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IPD50N06S4L12ATMA2

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes