 | |  | |
| PartNumber | IPD50N06S214ATMA2 | IPD50N06S2L13ATMA1 | IPD50N06S214ATMA1 |
| Description | MOSFET N-CHANNEL_55/60V | MOSFET N-Ch 55V 50A DPAK-2 OptiMOS | MOSFET N-CH 55V 50A TO252-3 |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-252-3 | TO-252-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Configuration | Single | Single | - |
| Qualification | AEC-Q101 | - | - |
| Packaging | Reel | Reel | - |
| Height | 2.3 mm | 2.3 mm | - |
| Length | 6.5 mm | 6.5 mm | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 6.22 mm | 6.22 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 2500 | 2500 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Part # Aliases | IPD50N06S2-14 SP001063624 | IPD50N06S2L-13 IPD50N06S2L13XT SP000252172 | - |
| Unit Weight | 0.139332 oz | 0.011993 oz | - |
| RoHS | - | Y | - |
| Vds Drain Source Breakdown Voltage | - | 55 V | - |
| Id Continuous Drain Current | - | 50 A | - |
| Rds On Drain Source Resistance | - | 10.2 mOhms | - |
| Vgs th Gate Source Threshold Voltage | - | 1.2 V | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Qg Gate Charge | - | 69 nC | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 175 C | - |
| Pd Power Dissipation | - | 136 W | - |
| Channel Mode | - | Enhancement | - |
| Series | - | XPD50N06 | - |
| Fall Time | - | 12 ns | - |
| Rise Time | - | 29 ns | - |
| Typical Turn Off Delay Time | - | 43 ns | - |
| Typical Turn On Delay Time | - | 9 ns | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
IPD50N06S2L13ATMA2 | MOSFET N-CHANNEL_55/60V | |
| IPD50N06S4L08ATMA2 | MOSFET MOSFET | ||
| IPD50N06S214ATMA2 | MOSFET N-CHANNEL_55/60V | ||
| IPD50N06S4L12ATMA2 | MOSFET MOSFET | ||
| IPD50N06S409ATMA2 | MOSFET MOSFET | ||
| IPD50N06S4L12ATMA2 | MOSFET N-CH 60V 50A TO252-3 | ||
| IPD50N06S2L13ATMA2 | MOSFET N-CH 55V 50A TO252-3 | ||
| IPD50N06S409ATMA2 | MOSFET N-CH 60V 50A TO252-3 | ||
| IPD50N06S4L08ATMA2 | MOSFET N-CH 60V 50A TO252-3 | ||
| IPD50N06S2L13ATMA1 | MOSFET N-CH 55V 50A TO252-3 | ||
| IPD50N06S214ATMA1 | MOSFET N-CH 55V 50A TO252-3 | ||
| IPD50N06S214ATMA2 | MOSFET N-CH 55V 50A TO252-3 | ||
| IPD50N06S409ATMA1 | MOSFET N-CH 60V 50A TO252-3 | ||
| IPD50N06S4L08ATMA1 | MOSFET N-CH 60V 50A TO252-3 | ||
| IPD50N06S4L12ATMA1 | MOSFET N-CH 60V 50A TO252-3-11 | ||
Infineon Technologies |
IPD50N06S409ATMA1 | MOSFET N-Ch 60V 50A DPAK-2 OptiMOS-T2 | |
| IPD50N06S2L13ATMA1 | MOSFET N-Ch 55V 50A DPAK-2 OptiMOS | ||
| IPD50N06S4L08ATMA1 | MOSFET N-Ch 60V 50A DPAK-2 OptiMOS-T2 | ||
| IPD50N06S4L12ATMA1 | MOSFET N-Ch 60V 50A DPAK-2 OptiMOS-T2 | ||
| IPD50N06S2-14 | Trans MOSFET N-CH 55V 50A 3-Pin TO-252 T/R - Bulk (Alt: IPD50N06S2-14) | ||
| IPD50N06S2-14 CMD50N06 | New and Original | ||
| IPD50N06S2L13 | New and Original | ||
| IPD50N06S3-07 | MOSFET N-Ch 55V 50A DPAK-2 | ||
| IPD50N06S3-09 | 50 A, 55 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 | ||
| IPD50N06S3-15 | MOSFET N-Ch 55V 50A DPAK-2 | ||
| IPD50N06S3L-06 | MOSFET N-Ch 55V 50A DPAK-2 | ||
| IPD50N06S3L-08 | MOSFET N-Ch 55V 50A DPAK-2 | ||
| IPD50N06S3L-13 | MOSFET N-Ch 55V 50A DPAK-2 | ||
| IPD50N06S3L06 | New and Original | ||
| IPD50N06S4-09 | Trans MOSFET N-CH 60V 50A 3-Pin TO-252 T/R (Alt: IPD50N06S4-09) | ||
| IPD50N06S4L-08 | Trans MOSFET N-CH 60V 50A Automotive 3-Pin(2+Tab) TO-252 | ||
| IPD50N06S4L-12 . | New and Original | ||
| IPD50N06S4L-12 4N06L12 | New and Original | ||
| IPD50N06S4L-12(SP0010286 | New and Original | ||
| IPD50N06S4L-12 | IGBT Transistors MOSFET N-Ch 60V 50A DPAK-2 OptiMOS-T2 | ||
| IPD50N06S2L-13 | RF Bipolar Transistors MOSFET N-Ch 55V 50A DPAK-2 OptiMOS |