IPD50N06S4L-08

Mfr. #:: IPD50N06S4L-08
Manufacturer:: Infineon Technologies AG
Description:: Trans MOSFET N-CH 60V 50A Automotive 3-Pin(2+Tab) TO-252
Lifecycle:: New from this manufacturer.
Datasheet:: IPD50N06S4L-08 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Product Attribute
Attribute Value

Tags: IPD50N06S4L, IPD50N06S4, IPD50N06S, IPD50N06, IPD50N0, IPD50N, IPD50, IPD5, IPD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPD50N06S4L-08 Description

***ure Electronics: Trans MOSFET N-CH 60V 50A Automotive 3-Pin(2+Tab) DPAK T/R

***ark: Mosfet, Aec-Q101, N-Ch, 60V, 50A, 71W Rohs Compliant: Yes

***et: Trans MOSFET N-CH 60V 50A 3-Pin(2+Tab) TO-252

***et Europe: OptiMOS-T2 Power-Transistor

***i-Key: MOSFET N-CH 60V 50A TO252-3

***ronik: N-CH 60V 50A 7,8mOhm TO252

***ment14 APAC: Prices include import duty and tax. MOSFET, AECQ101, N-CH, 60V, 50A, 71W; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0063ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power Dissipation Pd:71W; Transistor Case Style:TO-252; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:OptiMOS T2 Series; Automotive Qualification Standard:AEC-Q101; SVHC:No SVHC (15-Jan-2019)

***nell: MOSFET, AECQ101, CAN-N, 60V, 50A, 71W; Polarità Transistor:Canale N; Corrente Continua di Drain Id:50A; Tensione Drain Source Vds:60V; Resistenza di Attivazione Rds(on):0.0063ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:1.7V; Dissipazione di Potenza Pd:71W; Modello Case Transistor:TO-252; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:OptiMOS T2 Series; Standard di Qualifica Automotive:AEC-Q101; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (15-Jan-2019)

***ineon: Summary of Features: N-channel - Enhancement mode; AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green Product (RoHS compliant); 100% Avalanche tested; Ultra low RDSon | Benefits: world's lowest RDS at 60V (on); highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: Valves control; Solenoids control; Lighting; Single-ended motors

Market price

Part #	Mfg.	Description	Stock	Price
IPD50N06S4L-08 DISTI # 32731013	Infineon Technologies AG	Trans MOSFET N-CH 60V 50A Automotive 3-Pin(2+Tab) TO-252 RoHS: Compliant	1215	28:$0.8962
IPD50N06S4L08ATMA1 DISTI # IPD50N06S4L08ATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 60V 50A TO252-3 RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Limited Supply - Call
IPD50N06S4L08ATMA2 DISTI # IPD50N06S4L08ATMA2-ND	Infineon Technologies AG	MOSFET N-CH 60V 50A TO252-3 RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Temporarily Out of Stock	2500:$0.4178
IPD50N06S4L08ATMA2 DISTI # V36:1790_06384697	Infineon Technologies AG	Trans MOSFET N-CH 60V 50A Automotive 3-Pin(2+Tab) DPAK T/R	0	2500000:$0.3311 1250000:$0.3313 250000:$0.3522 25000:$0.3883 2500:$0.3943
IPD50N06S4L-08 DISTI # IPD50N06S4L-08	Infineon Technologies AG	Trans MOSFET N-CH 60V 50A 3-Pin TO-252 T/R - Bulk (Alt: IPD50N06S4L-08) RoHS: Not Compliant Min Qty: 1087 Container: Bulk	Americas - 0	10870:$0.3549 5435:$0.3619 3261:$0.3739 2174:$0.3879 1087:$0.4029
IPD50N06S4L08ATMA2 DISTI # IPD50N06S4L08ATMA2	Infineon Technologies AG	Trans MOSFET N-CH 60V 50A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD50N06S4L08ATMA2) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	25000:$0.3609 15000:$0.3669 10000:$0.3799 5000:$0.3939 2500:$0.4089
IPD50N06S4L08ATMA2 DISTI # IPD50N06S4L08ATMA2	Infineon Technologies AG	Trans MOSFET N-CH 60V 50A 3-Pin TO-252 T/R - Bulk (Alt: IPD50N06S4L08ATMA2) RoHS: Compliant Min Qty: 1087 Container: Bulk	Americas - 0	10870:$0.2919 5435:$0.2969 3261:$0.3069 2174:$0.3189 1087:$0.3309
IPD50N06S4L08ATMA1 DISTI # SP000374322	Infineon Technologies AG	Trans MOSFET N-CH 60V 50A 3-Pin(2+Tab) TO-252 (Alt: SP000374322) RoHS: Compliant Min Qty: 2500	Europe - 0	25000:€0.3809 15000:€0.4019 10000:€0.4679 5000:€0.5499 2500:€0.6399
IPD50N06S4L08ATMA2 DISTI # SP001028664	Infineon Technologies AG	Trans MOSFET N-CH 60V 50A 3-Pin TO-252 T/R (Alt: SP001028664) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Europe - 0	25000:€0.4009 15000:€0.4319 10000:€0.4799 5000:€0.5389 2500:€0.6349
IPD50N06S4L08ATMA2 DISTI # 726-IPD50N06S4L08ATM	Infineon Technologies AG	MOSFET MOSFET RoHS: Compliant	10611	1:$0.8800 10:$0.7510 100:$0.5770 500:$0.5100 1000:$0.4030 2500:$0.3570 10000:$0.3440
IPD50N06S4L08ATMA1 DISTI # 726-IPD50N06S4L08XT	Infineon Technologies AG	MOSFET N-Ch 60V 50A DPAK-2 OptiMOS-T2 RoHS: Compliant	164	1:$0.9900 10:$0.7670 100:$0.4950 1000:$0.3960 2500:$0.3340 10000:$0.3210 25000:$0.3020
IPD50N06S4L-08 DISTI # 726-IPD50N06S4L-08	Infineon Technologies AG	MOSFET N-Ch 60V 50A DPAK-2 OptiMOS-T2 RoHS: Compliant	0
IPD50N06S4L-08	Infineon Technologies AG	Power Field-Effect Transistor, 50A I(D), 60V, 0.0078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 RoHS: Compliant	30	1000:$0.3700 500:$0.3900 100:$0.4000 25:$0.4200 1:$0.4500
IPD50N06S4L08ATMA1	Infineon Technologies AG	Power Field-Effect Transistor, 50A I(D), 60V, 0.0078ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-252 RoHS: Compliant	2443	1000:$0.3300 500:$0.3500 100:$0.3600 25:$0.3800 1:$0.4100
IPD50N06S4L08ATMA2	Infineon Technologies AG	Power Field-Effect Transistor, 50A I(D), 60V, 0.0078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 RoHS: Compliant	8510	1000:$0.3000 500:$0.3200 100:$0.3300 25:$0.3500 1:$0.3700

Image	Part #	Description
	Mfr.#: IPD50N06S4L08ATMA2 OMO.#: OMO-IPD50N06S4L08ATMA2	MOSFET MOSFET
	Mfr.#: IPD50N06S4L12ATMA2 OMO.#: OMO-IPD50N06S4L12ATMA2	MOSFET MOSFET
	Mfr.#: IPD50N04S408ATMA1 OMO.#: OMO-IPD50N04S408ATMA1	MOSFET N-Ch 40V 50A DPAK-2 OptiMOS-T2
	Mfr.#: IPD50N08S413ATMA1 OMO.#: OMO-IPD50N08S413ATMA1	MOSFET N-CHANNEL 75/80V
	Mfr.#: IPD50N04S410ATMA1 OMO.#: OMO-IPD50N04S410ATMA1	MOSFET N-CHANNEL_30/40V
	Mfr.#: IPD50N04S309ATMA1 OMO.#: OMO-IPD50N04S309ATMA1	MOSFET N-CHANNEL_30/40V
	Mfr.#: IPD50N04S308ATMA1-CUT TAPE OMO.#: OMO-IPD50N04S308ATMA1-CUT-TAPE-1190	New and Original
	Mfr.#: IPD50N06S2L13 OMO.#: OMO-IPD50N06S2L13-1190	New and Original
	Mfr.#: IPD50N06S3L-06 OMO.#: OMO-IPD50N06S3L-06-1190	MOSFET N-Ch 55V 50A DPAK-2
	Mfr.#: IPD50N08S413ATMA1 OMO.#: OMO-IPD50N08S413ATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CHANNEL 75/80V

IPD50N06S4L-08

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes