IPD50N06S2L13ATMA1

Product Attribute

Attribute Value

Manufacturer:

Infineon

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

TO-252-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

55 V

Id - Continuous Drain Current:

50 A

Rds On - Drain-Source Resistance:

10.2 mOhms

Vgs th - Gate-Source Threshold Voltage:

1.2 V

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

69 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 175 C

Pd - Power Dissipation:

136 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Reel

Height:

2.3 mm

Length:

6.5 mm

Series:

XPD50N06

Transistor Type:

1 N-Channel

Width:

6.22 mm

Brand:

Infineon Technologies

Fall Time:

12 ns

Product Type:

MOSFET

Rise Time:

29 ns

Factory Pack Quantity:

2500

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

43 ns

Typical Turn-On Delay Time:

9 ns

Part # Aliases:

IPD50N06S2L-13 IPD50N06S2L13XT SP000252172

Unit Weight:

0.011993 oz

Tags

IPD50N06S2L1, IPD50N06S2L, IPD50N06S2, IPD50N06S, IPD50N06, IPD50N0, IPD50N, IPD50, IPD5, IPD