PartNumber | IPD50N06S2L13ATMA2 | IPD50N06S2L13ATMA1 |
Description | MOSFET N-CHANNEL_55/60V | MOSFET N-Ch 55V 50A DPAK-2 OptiMOS |
Manufacturer | Infineon | Infineon |
Product Category | MOSFET | MOSFET |
RoHS | Y | Y |
Technology | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT |
Package / Case | TO-252-3 | TO-252-3 |
Number of Channels | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel |
Configuration | Single | Single |
Qualification | AEC-Q101 | - |
Packaging | Reel | Reel |
Height | 2.3 mm | 2.3 mm |
Length | 6.5 mm | 6.5 mm |
Transistor Type | 1 N-Channel | 1 N-Channel |
Width | 6.22 mm | 6.22 mm |
Brand | Infineon Technologies | Infineon Technologies |
Product Type | MOSFET | MOSFET |
Factory Pack Quantity | 2500 | 2500 |
Subcategory | MOSFETs | MOSFETs |
Part # Aliases | IPD50N06S2L-13 SP001063626 | IPD50N06S2L-13 IPD50N06S2L13XT SP000252172 |
Unit Weight | 0.139332 oz | 0.011993 oz |
Vds Drain Source Breakdown Voltage | - | 55 V |
Id Continuous Drain Current | - | 50 A |
Rds On Drain Source Resistance | - | 10.2 mOhms |
Vgs th Gate Source Threshold Voltage | - | 1.2 V |
Vgs Gate Source Voltage | - | 20 V |
Qg Gate Charge | - | 69 nC |
Minimum Operating Temperature | - | - 55 C |
Maximum Operating Temperature | - | + 175 C |
Pd Power Dissipation | - | 136 W |
Channel Mode | - | Enhancement |
Series | - | XPD50N06 |
Fall Time | - | 12 ns |
Rise Time | - | 29 ns |
Typical Turn Off Delay Time | - | 43 ns |
Typical Turn On Delay Time | - | 9 ns |