FCU5N60TU

Mfr. #:: FCU5N60TU
Manufacturer:: ON Semiconductor / Fairchild
Description:: MOSFET 600V N-Channel MOSFET
Lifecycle:: New from this manufacturer.
Datasheet:: FCU5N60TU Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: ON Semiconductor

Product Category:: MOSFET

RoHS:: E

Technology:: Si

Mounting Style:: Through Hole

Package / Case:: TO-220-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 600 V

Id - Continuous Drain Current:: 4.6 A

Rds On - Drain-Source Resistance:: 810 mOhms

Vgs - Gate-Source Voltage:: 30 V

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 54 W

Configuration:: Single

Channel Mode:: Enhancement

Packaging:: Tube

Height:: 16.3 mm

Length:: 10.67 mm

Series:: FCU5N60

Transistor Type:: 1 N-Channel

Width:: 4.7 mm

Brand:: ON Semiconductor / Fairchild

Forward Transconductance - Min:: 3.8 S

Fall Time:: 22 ns

Product Type:: MOSFET

Rise Time:: 40 ns

Factory Pack Quantity:: 5040

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 47 ns

Typical Turn-On Delay Time:: 12 ns

Unit Weight:: 0.012102 oz

Tags: FCU

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FCU5N60TU Description

***emi: Power MOSFET, N-Channel, SUPERFET®, Easy Drive, 600 V, 4.6 A, 950 mΩ, IPAK

***nell: MOSFET, N, 600V, I-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:600V; Current, Id Cont:4.6A; Resistance, Rds On:0.95ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:I-PAK; Termination Type:Through Hole; Alternate Case Style:TO-251AA; Current, Idm Pulse:13.8A; No. of Pins:3; Power Dissipation:54W; Power, Pd:54W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Temperature, Tj Max:150°C; Temperature, Tj Min:-55°C; Voltage, Vds:600V; Voltage, Vds Max:600V; Voltage, Vgs th Max:5V; dv/dt:10V/µs

***rchild Semiconductor: SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

***icroelectronics: N-channel 600 V, 0.72 Ohm typ., 5.5 A MDmesh M2 Power MOSFET in IPAK package

***ure Electronics: N-Channel 600 V 780 mOhm Through Hole Mdmesh II Plus Mosfet - IPAK

***r Electronics: Power Field-Effect Transistor, 5.5A I(D), 600V, 0.78ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251

***icroelectronics: N-channel 600 V, 0.86 Ohm typ., 5 A MDmesh M2 Power MOSFET in IPAK package

***ure Electronics: N-Channel 600 V 950 mOhm Through Hole Mdmesh II Plus Power Mosfet - IPAK

***r Electronics: Power Field-Effect Transistor, 5A I(D), 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251

***icroelectronics: N-channel 600 V, 1.76 Ohm, 4 A SuperMESH(TM) Power MOSFET in IPAK

***ark: MOSFET Transistor, N Channel, 2 A, 600 V, 1.76 ohm, 10 V, 3.75 V

*** Source Electronics: Trans MOSFET N-CH 600V 4A 3-Pin(3+Tab) IPAK Tube / MOSFET N-CH 600V 4A IPAK

***r Electronics: Power Field-Effect Transistor, 4A I(D), 600V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251

***ment14 APAC: MOSFET, N CH, 600V, 4A, IPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:2A; Drain Source Voltage Vds:600V; On Resistance Rds(on):1.76ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.75V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Current Id Max:4A; Package / Case:IPAK; Power Dissipation Pd:70W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:600V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V

***et: Trans MOSFET N-CH 650V 4.5A 3-Pin(3+Tab) TO-251

***ineon SCT: Replacement for 600V CoolMOS™ C3 is CoolMOS™ P7, PG-TO251-3, RoHS

***ineon: Replacement for 600V CoolMOS C3 is 600V CoolMOS C6/E6 >> Click & go to 600V CoolMOS C6/E6 | Summary of Features: Low specific on-state resistance; (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Server; Telecom; Consumer; PC power; Adapter

***emi: N-Channel Power MOSFET, UniFETTM II, 600 V, 5.5 A, 1.25 Ω, IPAK

*** Stop Electro: Power Field-Effect Transistor, 5.5A I(D), 600V, 1.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA

***rchild Semiconductor: UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

***emi: Power MOSFET 600V 5.9A 900mOhm Single N-Channel DPAK

***ical: Trans MOSFET N-CH 600V 5.7A 3-Pin(2+Tab) DPAK Tube

***ark: TUBE / NFET DPAK 600V 5.9A 900

Market price

Part #	Mfg.	Description	Stock	Price
FCU5N60TU DISTI # V79:2366_17786152	ON Semiconductor	SF1 600V 950MOHM E IPAK	3070	2500:$0.5582 1000:$0.5914 500:$0.7549 100:$0.8613 10:$1.1232 1:$1.4600
FCU5N60TU DISTI # V36:1790_06359175	ON Semiconductor	SF1 600V 950MOHM E IPAK	0
FCU5N60TU DISTI # FCU5N60TU-ND	ON Semiconductor	MOSFET N-CH 600V 4.6A I-PAK RoHS: Compliant Min Qty: 5040 Container: Tube	Limited Supply - Call	5040:$0.6042
FCU5N60TU DISTI # 26637322	ON Semiconductor	SF1 600V 950MOHM E IPAK	5040	5040:$0.4557
FCU5N60TU DISTI # 26115035	ON Semiconductor	SF1 600V 950MOHM E IPAK	3070	2500:$0.6001 1000:$0.6358 500:$0.8115 100:$0.9259 17:$1.2074
FCU5N60TU DISTI # FCU5N60TU	ON Semiconductor	Trans MOSFET N-CH 600V 4.6A 3-Pin(3+Tab) IPAK Rail - Rail/Tube (Alt: FCU5N60TU) RoHS: Compliant Min Qty: 70 Container: Tube	Americas - 5040	700:$0.4429 350:$0.4539 210:$0.4599 140:$0.4659 70:$0.4689
FCU5N60TU DISTI # FCU5N60TU	ON Semiconductor	Trans MOSFET N-CH 600V 4.6A 3-Pin(3+Tab) IPAK Rail - Bulk (Alt: FCU5N60TU) RoHS: Compliant Min Qty: 582 Container: Bulk	Americas - 0	5820:$0.5299 2910:$0.5439 1746:$0.5509 1164:$0.5579 582:$0.5619
FCU5N60TU DISTI # 20M1157	ON Semiconductor	SF1 600V 950MOHM E IPAK / TUBE	0	10000:$0.5850 2500:$0.6120 1000:$0.6660 500:$0.7990 100:$0.9120 10:$1.1300 1:$1.3900
FCU5N60TU. DISTI # 96AC0001	ON Semiconductor	SF1 600V 950MOHM E IPAK ROHS COMPLIANT: YES	0	700:$0.4470 350:$0.4580 142:$0.4640 72:$0.4710 1:$0.4740
FCU5N60TU DISTI # 512-FCU5N60TU	ON Semiconductor	MOSFET 600V N-Channel MOSFET RoHS: Compliant	4970	1:$1.3500 10:$1.1500 100:$0.8870 500:$0.7840 1000:$0.6190 2500:$0.5900
FCU5N60TU	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 4.6A I(D), 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	2588	1000:$0.5700 500:$0.6000 100:$0.6200 25:$0.6500 1:$0.7000
FCU5N60TU DISTI # 1324781	ON Semiconductor	RoHS: Compliant	0	1000:$1.0200 500:$1.3000 100:$1.4700 10:$1.9100 1:$2.2400

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Availability

Stock:: Available
On Order:: 1987
Enter Quantity:

Current price of FCU5N60TU is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$1.35~~; ~~$1.35~~

10: ~~$1.15~~; ~~$11.50~~

100: ~~$0.89~~; ~~$88.70~~

500: ~~$0.78~~; ~~$392.00~~

1000: ~~$0.62~~; ~~$619.00~~

2500: ~~$0.59~~; ~~$1 475.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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FCU5N60TU

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes