IXFP12N65X2M

Product Attribute

Attribute Value

Manufacturer:

IXYS

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-220-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

650 V

Id - Continuous Drain Current:

12 A

Rds On - Drain-Source Resistance:

310 mOhms

Vgs th - Gate-Source Threshold Voltage:

3 V

Vgs - Gate-Source Voltage:

10 V

Qg - Gate Charge:

18.5 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

40 W

Configuration:

Single

Channel Mode:

Enhancement

Tradename:

HiPerFET

Packaging:

Tube

Series:

650V Ultra Junction X2

Transistor Type:

1 N-Channel

Brand:

IXYS

Forward Transconductance - Min:

4.8 S

Fall Time:

12 ns

Product Type:

MOSFET

Rise Time:

26 ns

Factory Pack Quantity:

50

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

45 ns

Typical Turn-On Delay Time:

27 ns

Tags

IXFP12, IXFP1, IXFP, IXF