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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Part # | Mfg. | Description | Stock | Price |
---|---|---|---|---|
SQ2308CES-T1-GE3 | Vishay Intertechnologies | MOSFET RECOMMENDED ALT 78-SQ2308CES-T1_GE3 RoHS: Compliant | Americas - 42000 |
|
SQ2308ES-T1-GE3 | Vishay Siliconix | POWER FIELD-EFFECT TRANSISTOR, 2.3A I(D), 60V, 0.155OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-236 | 3353 |
|
SQ2308EST1GE3 | Vishay Intertechnologies | Power Field-Effect Transistor, 2.3A I(D), 60V, 0.155ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236 RoHS: Compliant | Europe - 34125 |
Image | Part # | Description |
---|---|---|
Mfr.#: SQ2308E OMO.#: OMO-SQ2308E-1190 |
New and Original | |
Mfr.#: SQ2308ES OMO.#: OMO-SQ2308ES-1190 |
New and Original | |
Mfr.#: SQ2308ES-T1-GE3 OMO.#: OMO-SQ2308ES-T1-GE3-1190 |
Trans MOSFET N-CH 60V 2.3A 3-Pin SOT-23 T/R (Alt: SQ2308ES-T1-GE3) | |
Mfr.#: SQ2308ES-TI-GE3 OMO.#: OMO-SQ2308ES-TI-GE3-1190 |
New and Original | |
Mfr.#: SQ2308EST1GE3 OMO.#: OMO-SQ2308EST1GE3-1190 |
Power Field-Effect Transistor, 2.3A I(D), 60V, 0.155ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236 |