SQ2

SQ2308CES-T1_GE3 vs SQ2303ES-T1_GE3 vs SQ2308CES-T1-GE3

 
PartNumberSQ2308CES-T1_GE3SQ2303ES-T1_GE3SQ2308CES-T1-GE3
DescriptionMOSFET 60V 2.3A 2watt AEC-Q101 QualifiedMOSFET P-Channel 30V AEC-Q101 QualifiedMOSFET RECOMMENDED ALT 78-SQ2308CES-T1_GE3
ManufacturerVishayVishayVishay
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-23-3SOT-23-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelP-Channel-
Vds Drain Source Breakdown Voltage60 V30 V-
Id Continuous Drain Current2.3 A2.5 A-
Rds On Drain Source Resistance150 mOhms170 mOhms-
Vgs th Gate Source Threshold Voltage1.5 V1.5 V-
Vgs Gate Source Voltage10 V10 V-
Qg Gate Charge5.3 nC4.5 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation2 W1.9 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
QualificationAEC-Q101AEC-Q101AEC-Q101
TradenameTrenchFETTrenchFETTrenchFET
PackagingReelReelReel
SeriesSQSQSQ
Transistor Type1 N-Channel1 P-Channel-
BrandVishay / SiliconixVishay / SiliconixVishay / Siliconix
Forward Transconductance Min5.5 S4 S-
Fall Time12 ns8 ns-
Product TypeMOSFETMOSFETMOSFET
Rise Time9 ns8 ns-
Factory Pack Quantity300030003000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time12 ns12 ns-
Typical Turn On Delay Time4 ns5 ns-
Unit Weight0.000282 oz0.000282 oz0.000282 oz
Part # Aliases--SQ2308ES-T1-GE3
  • Start with
  • SQ2 218
Manufacturer Part # Description RFQ
Vishay / Siliconix
Vishay / Siliconix
SQ2308CES-T1_GE3 MOSFET 60V 2.3A 2watt AEC-Q101 Qualified
SQ2303ES-T1_GE3 MOSFET P-Channel 30V AEC-Q101 Qualified
SQ2309ES-T1-GE3 MOSFET RECOMMENDED ALT 781-SQ2309ES-T1_GE3
SQ2308CES-T1-GE3 MOSFET RECOMMENDED ALT 78-SQ2308CES-T1_GE3
Vishay
Vishay
SQ2303ES-T1_GE3 MOSFET P-CHAN 30V SOT23
SQ2301ES-T1_GE3 MOSFET P-CH 20V 3.9A TO236
SQ2308CES-T1_GE3 MOSFET N-CH 60V 2.3A
SQ2308CES-T1_GE3-CUT TAPE New and Original
SQ2000800DIDNC New and Original
SQ2003DW New and Original
SQ2003J/883 New and Original
SQ201 RF POWER FIELD-EFFECT TRANSISTOR, 2-ELEMENT, ULTRA HIGH FREQUENCY BAND, SILICON, N-CHANNEL, METAL-OXIDE SEMICONDUCTOR FET
SQ2019H2 New and Original
SQ201AJ New and Original
SQ202 New and Original
SQ203AJ New and Original
SQ212 New and Original
SQ2200 New and Original
SQ2200 3.579545M New and Original
SQ2200-.25MHZ New and Original
SQ2200-42.000M New and Original
SQ2200-5.000M New and Original
SQ22001600M New and Original
SQ2200E-1.000M New and Original
SQ221 New and Original
SQ224532.768MHZ New and Original
SQ2245E-11.520 MHZ New and Original
SQ2245ES-1.8432M New and Original
SQ2245SV-10.0M New and Original
SQ23-010 New and Original
SQ230 New and Original
SQ2301ES New and Original
SQ2301ES-T1-E3 New and Original
SQ2301ES-T1-GE3 P-CHANNEL 20-V (D-S) 175C MOSF
SQ2303ES New and Original
SQ2303ES-T1-GE3 P-CHANNEL 30-V (D-S) 175C MOSF
SQ2306 New and Original
SQ2308 New and Original
SQ2308BES New and Original
SQ2308BES-T1-E3 New and Original
SQ2308BES-T1-GE3 New and Original
SQ2308CES New and Original
SQ2308CES-T1-GE3 Trans MOSFET N-CH 60V 2.3A Automotive 3-Pin SOT-23 T/R
SQ2308E New and Original
SQ2308ES New and Original
SQ2308ES-T1-GE3 Trans MOSFET N-CH 60V 2.3A 3-Pin SOT-23 T/R (Alt: SQ2308ES-T1-GE3)
SQ2308ES-TI-GE3 New and Original
SQ2308EST1GE3 Power Field-Effect Transistor, 2.3A I(D), 60V, 0.155ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236
SQ2309ES-T1-E3 New and Original
SQ2309ES-T1-GE3 Trans MOSFET P-CH 60V 1.7A Automotive 3-Pin SOT-23 T/R
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