PMZB370UNE,315

PMZB370UNE,315
Mfr. #:
PMZB370UNE,315
Manufacturer:
Nexperia
Description:
MOSFET N-Chan 30V 900mA
Lifecycle:
New from this manufacturer.
Datasheet:
PMZB370UNE,315 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Nexperia
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
DFN-1006B-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
30 V
Id - Continuous Drain Current:
900 mA
Rds On - Drain-Source Resistance:
490 mOhms
Vgs - Gate-Source Voltage:
8 V
Pd - Power Dissipation:
715 mW
Configuration:
Single
Packaging:
Reel
Transistor Type:
1 N-Channel
Brand:
Nexperia
Product Type:
MOSFET
Factory Pack Quantity:
10000
Subcategory:
MOSFETs
Tags
PMZB37, PMZB3, PMZB, PMZ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***peria
PMZB370UNE - 30 V, single N-channel Trench MOSFET
***ure Electronics
Single N-Channel 30 V 360 mW 1.16 nC Silicon Surface Mount Mosfet - SOT-883
***ical
Trans MOSFET N-CH 30V 0.9A 3-Pin DFN T/R
***i-Key
MOSFET N-CH 30V 900MA DFN1006B-3
***ark
Transistor Polarity:n Channel; Continuous Drain Current Id:900Ma; Drain Source Voltage Vds:30V; On Resistance Rds(On):0.37Ohm; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:770Mv; Power Dissipation Pd:360Mw; No. Of Pins:3Pins Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 30V, 0.9A, SOT-883B-3; Transistor Polarity:N Channel; Continuous Drain Current Id:900mA; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.37ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:770mV; Power Dissipation Pd:360mW; Transistor Case Style:SOT-883B; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018)
***nell
MOSFET, N-CH, 30V, 0.9A, SOT-883B-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:900mA; Tensione Drain Source Vds:30V; Resistenza di Attivazione Rds(on):0.37ohm; Tensione Vgs di Misura Rds(on):4.5V; Tensione di Soglia Vgs:770mV; Dissipazione di Potenza Pd:360mW; Modello Case Transistor:SOT-883B; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
Part # Mfg. Description Stock Price
PMZB370UNE,315
DISTI # 1727-1379-1-ND
NexperiaMOSFET N-CH 30V 0.9A DFN1006B-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
6382In Stock
  • 1000:$0.1642
  • 500:$0.2129
  • 100:$0.3020
  • 10:$0.4310
  • 1:$0.5500
PMZB370UNE,315
DISTI # 1727-1379-6-ND
NexperiaMOSFET N-CH 30V 0.9A DFN1006B-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
6382In Stock
  • 1000:$0.1642
  • 500:$0.2129
  • 100:$0.3020
  • 10:$0.4310
  • 1:$0.5500
PMZB370UNE,315
DISTI # 1727-1379-2-ND
NexperiaMOSFET N-CH 30V 0.9A DFN1006B-3
RoHS: Compliant
Min Qty: 10000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 10000:$0.1319
PMZB370UNE,315
DISTI # PMZB370UNE,315
NexperiaTrans MOSFET N-CH 30V 0.9A 3-Pin DFN T/R - Tape and Reel (Alt: PMZB370UNE,315)
RoHS: Compliant
Min Qty: 10000
Container: Reel
Americas - 280000
  • 10000:$0.0969
  • 20000:$0.0949
  • 40000:$0.0919
  • 60000:$0.0899
  • 100000:$0.0879
PMZB370UNE,315
DISTI # PMZB370UNE315
NexperiaTrans MOSFET N-CH 30V 0.9A 3-Pin DFN T/R - Bulk (Alt: PMZB370UNE315)
RoHS: Compliant
Min Qty: 6250
Container: Bulk
Americas - 0
  • 6250:$0.1049
  • 6252:$0.1029
  • 12502:$0.1009
  • 31250:$0.0979
  • 62500:$0.0959
PMZB370UNE,315
DISTI # 771-PMZB370UNE315
NexperiaMOSFET N-Chan 30V 900mA
RoHS: Compliant
0
  • 10000:$0.1040
  • 20000:$0.0960
  • 50000:$0.0920
PMZB370UNE315NXP SemiconductorsNow Nexperia PMZB370UNE - Small Signal Field-Effect Transistor, 0.9A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, XQFN3
RoHS: Not Compliant
31500
  • 1000:$0.0900
  • 100:$0.1000
  • 500:$0.1000
  • 1:$0.1100
  • 25:$0.1100
PMZB370UNE315NexperiaNow Nexperia PMZB370UNE - Small Signal Field-Effect Transistor, 0.9A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, XQFN3
RoHS: Not Compliant
660000
  • 1000:$0.0900
  • 100:$0.1000
  • 500:$0.1000
  • 1:$0.1100
  • 25:$0.1100
PMZB370UNE,315
DISTI # 2498602
NexperiaMOSFET, N-CH, 30V, 0.9A, SOT-883B-3
RoHS: Compliant
0
  • 500:£0.1480
  • 250:£0.1820
  • 100:£0.2160
  • 25:£0.3370
  • 5:£0.3560
Image Part # Description
PMZB370UNE,315

Mfr.#: PMZB370UNE,315

OMO.#: OMO-PMZB370UNE-315

MOSFET N-Chan 30V 900mA
PMZB370UNE315

Mfr.#: PMZB370UNE315

OMO.#: OMO-PMZB370UNE315-1190

Now Nexperia PMZB370UNE - Small Signal Field-Effect Transistor, 0.9A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, XQFN3
PMZB370UNE

Mfr.#: PMZB370UNE

OMO.#: OMO-PMZB370UNE-1190

SMALL SIGNAL FIELD-EFFECT TRANSISTOR
PMZB370UNE,315

Mfr.#: PMZB370UNE,315

OMO.#: OMO-PMZB370UNE-315-NEXPERIA

MOSFET N-CH 30V 0.9A DFN1006B-3
Availability
Stock:
Available
On Order:
4500
Enter Quantity:
Current price of PMZB370UNE,315 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$0.42
$0.42
10
$0.32
$3.17
100
$0.17
$17.20
1000
$0.13
$129.00
2500
$0.11
$277.50
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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