NTD4302G

Mfr. #:: NTD4302G
Manufacturer:: ON Semiconductor
Description:: MOSFET 30V 68A N-Channel
Lifecycle:: New from this manufacturer.
Datasheet:: NTD4302G Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: NTD4302G Datasheet NTD4302G Datasheet (P4-P6)NTD4302G Datasheet (P7)
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: ON Semiconductor

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: TO-252-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 30 V

Id - Continuous Drain Current:: 68 A

Rds On - Drain-Source Resistance:: 7.8 mOhms

Vgs - Gate-Source Voltage:: 20 V

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 75 W

Configuration:: Single

Channel Mode:: Enhancement

Packaging:: Tube

Height:: 2.38 mm

Length:: 6.73 mm

Transistor Type:: 1 N-Channel

Type:: MOSFET

Width:: 6.22 mm

Brand:: ON Semiconductor

Forward Transconductance - Min:: 20 S

Fall Time:: 55 ns, 40 ns, 58 ns

Product Type:: MOSFET

Rise Time:: 15 ns, 13 ns, 25 ns

Factory Pack Quantity:: 75

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 85 ns, 55 ns, 40 ns

Typical Turn-On Delay Time:: 11 ns, 11 ns, 15 ns

Unit Weight:: 0.139332 oz

Tags: NTD430, NTD43, NTD4, NTD

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

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Packaging Boxes

NTD4302G Description

***emi: Single N-Channel Power MOSFET 30V, 18.5A, 10mΩ

***et: Trans MOSFET N-CH 30V 68A 3-Pin(2+Tab) DPAK Rail

***sible Micro: XTR,PWR,MFT,NTD4302,DPK 30V,68A,RDS(on)=0.010-OHM@10V,N-CHANNEL,D-PAK

***ser: MOSFETs- Power and Small Signal 30V 68A N-Channel

***r Electronics: Power Field-Effect Transistor, 8.4A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***nell: MOSFET, N; Transistor Polarity: N Channel; Continuous Drain Current Id: 5.3A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.01ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.9V; Power Dissipation Pd: 1.87W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Current Id Max: 68A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Surface Mount Device; Voltage Vds Typ: 30V; Voltage Vgs Max: 1.9V; Voltage Vgs Rds on Measurement: 10V

***ure Electronics: N-Channel 30 V 7.8 mOhm 75 W Tab Mount Power MOSFET - TO-252-3

***emi: Single N-Channel Power MOSFET 30V, 18.5A, 10mΩ

***nell: MOSFET, N-CH, 30V, 68A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 68A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0078ohm; Available until stocks are exhausted Alternative available

***emi: Single N-Channel Power MOSFET 30V, 18.5A, 10mΩ

***ser: MOSFETs- Power and Small Signal 30V 68A N-Channel

***ponent Stockers USA: 8.4 A 30 V 0.01 ohm N-CHANNEL Si POWER MOSFET

***r Electronics: Power Field-Effect Transistor, 8.4A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***icroelectronics: N-channel 30 V, 0.0042 Ohm, 75 A, DPAK STripFET(TM) VI DeepGATE(TM) Power MOSFET

***r Electronics: Power Field-Effect Transistor, 75A I(D), 30V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***nell: MOSFET, N CH, 30V, 75A, DPAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 75A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0042ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.7V; Power Dissipation Pd: 60W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C

***emi: PowerTrench® MOSFET, N-Channel, 30V, 58A, 9mΩ

***ark: TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,13A I(D),TO-252AA

***ure Electronics: N-Channel 30 V 58 A 9 mOhm PowerTrench Mosfet TO-252AA

*** Source Electronics: MOSFET N-CH 30V 58A DPAK / Trans MOSFET N-CH 30V 13A 3-Pin(2+Tab) DPAK T/R

***roFlash: Power Field-Effect Transistor, 35A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***rchild Semiconductor: This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.

***nell: MOSFET, N-CH, 30V, 58A, TO-252AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 58A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.007ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.5V; Power Dissipation Pd: 55W; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)

***ure Electronics: STD86N3LH5 Series 30 V 0.005 Ohm 80 A N-Channel STripFET H5 Power Mosfet-DPAK-3

***ical: Trans MOSFET N-CH 30V 80A Automotive 3-Pin(2+Tab) DPAK T/R

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 80A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***ark: MOSFET, AEC-Q101, N-CH, 30V, TO-252; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:80A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.8V RoHS Compliant: Yes

***ure Electronics: N-Channel 33 V 10.5 mOhm Surface Mount SAFeFET Power MOSFET - TO-252-3

***icroelectronics: N-channel 33 V clamped, 9.5 mOhm typ., 70 A fully protected SAFeFET Power MOSFET in a DPAK package

***r Electronics: Power Field-Effect Transistor, 70A I(D), 33V, 0.0125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Market price

Part #	Mfg.	Description	Stock	Price
NTD4302G DISTI # NTD4302GOS-ND	ON Semiconductor	MOSFET N-CH 30V 8.4A DPAK RoHS: Compliant Min Qty: 525 Container: Tube	Limited Supply - Call
NTD4302 DISTI # 863-NTD4302	ON Semiconductor	MOSFET 30V 68A N-Channel RoHS: Not compliant	0
NTD4302G DISTI # 863-NTD4302G	ON Semiconductor	MOSFET 30V 68A N-Channel RoHS: Compliant	0
NTD4302G	ON Semiconductor	RoHS: Not Compliant	43625	1000:$0.4200 500:$0.4400 100:$0.4600 25:$0.4800 1:$0.5200
NTD4302G	ON Semiconductor		680
NTD4302G DISTI # 1611230	ON Semiconductor	RoHS: Compliant	0	1:$2.0600 25:$1.7000 100:$1.4100 250:$1.2400

Image	Part #	Description
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NTD4302G

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes