OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

NTD4302G

P1-P3P4-P6P7-P7
NTD4302
http://onsemi.com
4
TYPICAL CHARACTERISTICS
V
GS
V
DS
5
10
7.5
0
12.5
10
10
4000
20100
C, CAPACITANCE (pF)
0
Q
g
, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
V
GS
, GATE−TO−SOURCE− VOLTAGE (V)
1
1000
100
10
10 100
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
R
G
, GATE RESISTANCE (W)
Figure 10. Diode Forward Voltage vs. Current
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
I
S
, SOURCE CURRENT (AMPS)
t, TIME (ns)
6000
010 60
0.5 0.90.80.70.6 1
15
5
0
20
25
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)
2000
3000
5000
30
2.5
I
D
= 2 A
T
J
= 25°C
Q
2
Q
1
V
GS
Q
T
V
DD
= 24 V
I
D
= 18.5 A
V
GS
= 10 V
t
r
t
d(off)
t
d(on)
t
f
V
GS
= 0 V
T
J
= 25°C
V
GS
= 0 V
V
DS
= 0 V
T
J
= 25°C
C
rss
C
iss
C
oss
C
rss
C
iss
20 30 40 50
1000
V
D
15
25
20
0
30
10
V
DS
, DRAIN−TO−SOURCE− VOLTAGE (V)
NTD4302
http://onsemi.com
5
TYPICAL CHARACTERISTICS
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
0.1
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
1
I
D
, DRAIN CURRENT (AMPS)
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
10
dc
1
100
100
10
10 ms
1 ms
100 ms
V
GS
= 10 V
SINGLE PULSE
T
C
= 25°C
di/dt
t
rr
t
a
t
p
I
S
0.25 I
S
TIME
I
S
t
b
Figure 12. Diode Reverse Recovery Waveform
R
q
JA
(t) = r(t) R
q
JA
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
- T
A
= P
(pk)
R
q
JA
(t)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
Figure 13. Thermal Response − Various Duty Cycles
t, TIME (seconds)
Rthj
a
(t)
,
EFFECTIVE
TRANSIENT
THERMAL RESISTANCE
1000
1
D = 0.5
1E-05 1E-03 1E-02 1E-01
0.2
0.01
0.01
0.02
0.05
0.1
1E+00 1E+01 1E+03
SINGLE PULSE
1E-04 1E+02
MOUNTED TO MINIMUM RECOMMENDED FOOTPRINT
DUTY CYCLE
100
10
0.1
ORDERING INFORMATION
Device Package Type Package Shipping
†
NTD4302G DPAK 369C
(Pb−Free)
75 Units / Rail
NTD4302−1G IPAK 369D
(Pb−Free)
75 Units / Rail
NTD4302T4G DPAK 369C
(Pb−Free)
2500 Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
NTD4302
http://onsemi.com
6
PACKAGE DIMENSIONS
DPAK (SINGLE GAUGE)
CASE 369C
ISSUE E
b
D
E
b3
L3
L4
b2
M
0.005 (0.13) C
c2
A
c
C
Z
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
D 0.235 0.245 5.97 6.22
E 0.250 0.265 6.35 6.73
A 0.086 0.094 2.18 2.38
b 0.025 0.035 0.63 0.89
c2 0.018 0.024 0.46 0.61
b2 0.028 0.045 0.72 1.14
c 0.018 0.024 0.46 0.61
e 0.090 BSC 2.29 BSC
b3 0.180 0.215 4.57 5.46
L4 −−− 0.040 −−− 1.01
L 0.055 0.070 1.40 1.78
L3 0.035 0.050 0.89 1.27
Z 0.155 −−− 3.93 −−−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-
MENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
7. OPTIONAL MOLD FEATURE.
12 3
4
5.80
0.228
2.58
0.102
1.60
0.063
6.20
0.244
3.00
0.118
6.17
0.243
ǒ
mm
inches
Ǔ
SCALE 3:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
H 0.370 0.410 9.40 10.41
A1 0.000 0.005 0.00 0.13
L1 0.114 REF 2.90 REF
L2 0.020 BSC 0.51 BSC
A1
H
DETAIL A
SEATING
PLANE
A
B
C
L1
L
H
L2
GAUGE
PLANE
DETAIL A
ROTATED 90 CW5
e
BOTTOM VIEW
Z
BOTTOM VIEW
SIDE VIEW
TOP VIEW
ALTERNATE
CONSTRUCTION
NOTE 7
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
P1-P3P4-P6P7-P7

NTD4302G

Mfr. #:
Buy NTD4302G
Manufacturer:
ON Semiconductor
Description:
MOSFET 30V 68A N-Channel
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet