NTD4302G

© Semiconductor Components Industries, LLC, 2014
July, 2014 − Rev. 9
1 Publication Order Number:
NTD4302/D
NTD4302
Power MOSFET
68 A, 30 V, N−Channel DPAK/IPAK
Features
Ultra Low R
DS(on)
Higher Efficiency Extending Battery Life
Logic Level Gate Drive
Diode Exhibits High Speed, Soft Recovery
Avalanche Energy Specified
I
DSS
Specified at Elevated Temperature
DPAK Mounting Information Provided
These Devices are Pb−Free and are RoHS Compliant
Applications
DC−DC Converters
Low Voltage Motor Control
Power Management in Portable and Battery Powered Products:
i.e., Computers, Printers, Cellular and Cordless Telephones,
and PCMCIA Cards
MAXIMUM RATINGS (T
C
= 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage V
DSS
30 Vdc
Gate−to−Source Voltage − Continuous V
GS
±20 Vdc
Thermal Resistance − Junction−to−Case
Total Power Dissipation @ T
C
= 25°C
Continuous Drain Current @ T
C
= 25°C (Note 4)
Continuous Drain Current @ T
C
= 100°C
R
q
JC
P
D
I
D
I
D
1.65
75
68
43
°C/W
W
A
A
Thermal Resistance − Junction−to−Ambient
(Note 2)
Total Power Dissipation @ T
A
= 25°C
Continuous Drain Current @ T
A
= 25°C
Continuous Drain Current @ T
A
= 100°C
Pulsed Drain Current (Note 3)
R
q
JA
P
D
I
D
I
D
I
DM
67
1.87
11.3
7.1
36
°C/W
W
A
A
A
Thermal Resistance − Junction−to−Ambient
(Note 1)
Total Power Dissipation @ T
A
= 25°C
Continuous Drain Current @ T
A
= 25°C
Continuous Drain Current @ T
A
= 100°C
Pulsed Drain Current (Note 3)
R
q
JA
P
D
I
D
I
D
I
DM
120
1.04
8.4
5.3
28
°C/W
W
A
A
A
Operating and Storage Temperature Range T
J
, T
stg
55 to
150
°C
Single Pulse Drain−to−Source Avalanche
Energy − Starting T
J
= 25°C
(V
DD
= 30 Vdc, V
GS
= 10 Vdc,
Peak I
L
= 17 Apk, L = 5.0 mH, R
G
= 25 W)
E
AS
722 mJ
Maximum Lead Temperature for Soldering
Purposes, 1/8 in from case for 10 seconds
T
L
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. When surface mounted to an FR4 board using the minimum recommended
pad size.
2. When surface mounted to an FR4 board using 0.5 sq. in. drain pad size.
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%.
4. Current Limited by Internal Lead Wires.
http://onsemi.com
MARKING DIAGRAMS
& PIN ASSIGNMENTS
A = Assembly Location*
Y = Year
WW = Work Week
T4302 = Device Code
G = Pb−Free Package
1
Gate
3
Source
2
Drain
4
Drain
DPAK
CASE 369C
(Surface Mount)
STYLE 2
AYWW
T
4302G
1
2
3
4
1
Gate
3
Source
2
Drain
4
Drain
IPAK
CASE 369D
(Straight Lead)
STYLE 2
1
2
3
4
N−Channel
D
S
G
30 V
7.8 mW @ 10 V
R
DS(on)
TYP
68 A
I
D
MAXV
(BR)DSS
See detailed ordering and shipping information in the
package dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
AYWW
T
4302G
* The Assembly Location code (A) is front side
optional. In cases where the Assembly Location is
stamped in the package, the front side assembly
code may be blank.
NTD4302
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain−Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 250 mA)
Positive Temperature Coefficient
V
(BR)DSS
30
25
Vdc
mV/°C
Zero Gate Voltage Drain Current
(V
GS
= 0 Vdc, V
DS
= 30 Vdc, T
J
= 25°C)
(V
GS
= 0 Vdc, V
DS
= 30 Vdc, T
J
= 125°C)
I
DSS
1.0
10
mAdc
Gate−Body Leakage Current (V
GS
= ±20 Vdc, V
DS
= 0 Vdc) I
GSS
±100 nAdc
ON CHARACTERISTICS
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 250 mAdc)
Negative Temperature Coefficient
V
GS(th)
1.0
1.9
−3.8
3.0
Vdc
Static Drain−Source On−State Resistance
(V
GS
= 10 Vdc, I
D
= 20 Adc)
(V
GS
= 10 Vdc, I
D
= 10 Adc)
(V
GS
= 4.5 Vdc, I
D
= 5.0 Adc)
R
DS(on)
0.0078
0.0078
0.010
0.010
0.010
0.013
W
Forward Transconductance (V
DS
= 15 Vdc, I
D
= 10 Adc) gFS 20 Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 24 Vdc, V
GS
= 0 Vdc,
f = 1.0 MHz)
C
iss
2050 2400 pF
Output Capacitance C
oss
640 800
Reverse Transfer Capacitance C
rss
225 310
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
(V
DD
= 25 Vdc, I
D
= 1.0 Adc,
V
GS
= 10 Vdc,
R
G
= 6.0 W)
t
d(on)
11 20 ns
Rise Time t
r
15 25
Turn−Off Delay Time t
d(off)
85 130
Fall Time t
f
55 90
Turn−On Delay Time
(V
DD
= 25 Vdc, I
D
= 1.0 Adc,
V
GS
= 10 Vdc,
R
G
= 2.5 W)
t
d(on)
11 20 ns
Rise Time t
r
13 20
Turn−Off Delay Time t
d(off)
55 90
Fall Time t
f
40 75
Turn−On Delay Time
(V
DD
= 24 Vdc, I
D
= 20 Adc,
V
GS
= 10 Vdc,
R
G
= 2.5 W)
t
d(on)
15 ns
Rise Time t
r
25
Turn−Off Delay Time t
d(off)
40
Fall Time t
f
58
Gate Charge
(V
DS
= 24 Vdc, I
D
= 2.0 Adc,
V
GS
= 10 Vdc)
Q
T
55 80 nC
Q
gs
(Q1) 5.5
Q
gd
(Q2) 15
BODY−DRAIN DIODE RATINGS (Note 5)
Diode Forward On−Voltage
(I
S
= 2.3 Adc, V
GS
= 0 Vdc)
(I
S
= 20 Adc, V
GS
= 0 Vdc)
(I
S
= 2.3 Adc, V
GS
= 0 Vdc, T
J
= 125°C)
V
SD
0.75
0.90
0.65
1.0
Vdc
Reverse Recovery Time
(I
S
= 2.3 Adc, V
GS
= 0 Vdc,
dI
S
/dt = 100 A/ms)
t
rr
39 65
ns
t
a
20
t
b
19
Reverse Recovery Stored Charge Q
rr
0.043
mC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Indicates Pulse Test: Pulse Width = 300 msec max, Duty Cycle 2%.
6. Switching characteristics are independent of operating junction temperature.
NTD4302
http://onsemi.com
3
TYPICAL CHARACTERISTICS
1.6
1.4
1
1.2
0.8
0.6
10
1
100
1000
10000
40
20
50
10
30
0
60
0.005
0
30
21.51
I
D
, DRAIN CURRENT (AMPS)
0
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
I
D
, DRAIN CURRENT (AMPS)
0
0.1
0.075
0.05
0.025
4
0
26810
Figure 3. On−Resistance vs.
Gate−To−Source Voltage
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 4. On−Resistance vs. Drain Current
and Gate Voltage
I
D
, DRAIN CURRENT (AMPS)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (
W
)
Figure 5. On−Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (°C)
Figure 6. Drain−To−Source Leakage
Current vs. Voltage
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
I
DSS
, LEAKAGE (nA)
50
−50 100750−25 125 150
23 6
0.00E+00
1.00E+01
0
0.01
0.015
525201510 3
0
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
10
20
40
2.5 3
V
GS
= 0 V
T
J
= 150°C
T
J
= 100°C
I
D
= 18.5 A
V
GS
= 10 V
V
GS
= 4.5 V
V
GS
= 10 V
T
J
= 25°C
I
D
= 10 A
T
J
= 25°C
V
DS
> = 10 V
T
J
= 25°C
T
J
= −55°C
T
J
= 100°C
V
GS
= 10 V
V
GS
= 7 V
V
GS
= 5 V
V
GS
= 4.6 V
V
GS
= 4 V
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
V
GS
= 4.4 V
V
GS
= 3.8 V
V
GS
= 3.4 V
V
GS
= 3.2 V
V
GS
= 3.0 V
T
J
= 25°C
5025
45
V
GS
= 2.8 V
0.5
2.00E+01 3.00E+01 4.00E+01 5.00E+01 6.00E+0
1

NTD4302G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
MOSFET 30V 68A N-Channel
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet