FJBE2150D

Mfr. #:: FJBE2150D
Manufacturer:: Fairchild Semiconductor
Description:
Lifecycle:: New from this manufacturer.
Datasheet:: FJBE2150D Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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ECAD Model:

Product Attribute
Attribute Value

Manufacturer: Fairchild Semiconductor

Product Category: Transistors - Bipolar (BJT) - RF

Packaging: Tube

Unit-Weight: 0.066315 oz

Mounting-Style: SMD/SMT

Package-Case: D2PAK-2

Configuration: Single

Pd-Power-Dissipation: 110 W

Maximum-Operating-Temperature: + 125 C

Minimum-Operating-Temperature: - 55 C

Collector-Emitter-Voltage-VCEO-Max: 800 V

Transistor-Polarity: NPN

Collector-Emitter-Saturation-Voltage: 0.25 V

Collector-Base-Voltage-VCBO: 1.25 kV

Emitter-Base-Voltage-VEBO: 12 V

Maximum-DC-Collector-Current: 2 A

Gain-Bandwidth-Product-fT: 5 MHz

Continuous-Collector-Current: 0.5 A

DC-Collector-Base-Gain-hfe-Min: 20

DC-Current-Gain-hFE-Max: 35

Tags: FJB

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FJBE2150D Description

***Semiconductor: ESBC™ Rated NPN Silicon Transistor

***rchild Semiconductor: The FJBE2150D is a low-cost, high-performance power switch designed to be used in an ESBC™ configuration in applications such as: power supplies, motor drivers, smart grid, or ignition switches. The power switch is designed to operate up to 1250 volts and up to 3 amps, while providing exceptionally low on-resistance and very low switching losses.The ESBC™ switch is designed to be driven using off-the-shelf power supply controllers or drivers. The ESBC™ MOSFET is a low-voltage, low-cost, surface-mount device that combines low-input capacitance and fast switching. The ESBC™ configuration further minimizes the required driving power because it does not have Miller capacitance.The FJBE2150D provides exceptional reliability and a large operating range due to its square Reverse-Bias-Safe-Operating-Area (RBSOA) and rugged design. The device is avalanche rated and has no parasitic transistors, so is not prone to static dv/dt failures.The power switch is manufactured using a dedicated high-voltage bipolar process and is packaged in high-voltage HV-D2PAK rated at 2500 V creepage and clearance.

Market price

Part #	Mfg.	Description	Stock	Price
FJBE2150DTU DISTI # FJBE2150DTU-ND	ON Semiconductor	TRANS NPN 800V 2A D2-PAK-2L RoHS: Compliant Container: Tube	Limited Supply - Call
FJBE2150DTU DISTI # FJBE2150DTU	ON Semiconductor	Trans GP BJT NPN 800V 2A 3-Pin D2PAK Tube (Alt: FJBE2150DTU) RoHS: Compliant Min Qty: 1 Container: Tube	Europe - 0	1:€1.1079 10:€0.9849 25:€0.8869 50:€0.8059 100:€0.7389 500:€0.6819 1000:€0.6329
FJBE2150DTU DISTI # 96W6437	ON Semiconductor	NPN/1250V/3A / RAIL	0	1:$1.5500 10:$1.2500 100:$1.0000 500:$0.8750 1000:$0.7250 2500:$0.6650 10000:$0.6350
FJBE2150DTU DISTI # 512-FJBE2150DTU	ON Semiconductor	Bipolar Transistors - BJT ESBC Rated NPN Silicon Transistor RoHS: Compliant	0

FJBE2150D

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes