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FJBE2150DTU

FJBE2150DTU
Mfr. #:
FJBE2150DTU
Manufacturer:
ON Semiconductor / Fairchild
Description:
Bipolar Transistors - BJT ESBC Rated NPN Silicon Transistor
Lifecycle:
New from this manufacturer.
Datasheet:
FJBE2150DTU Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
FJBE2150DTU Datasheet
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
ON Semiconductor
Product Category:
Bipolar Transistors - BJT
RoHS:
Y
Mounting Style:
SMD/SMT
Package / Case:
D2PAK-3
Transistor Polarity:
NPN
Configuration:
Single
Collector- Emitter Voltage VCEO Max:
800 V
Collector- Base Voltage VCBO:
1.25 kV
Emitter- Base Voltage VEBO:
12 V
Collector-Emitter Saturation Voltage:
0.25 V
Maximum DC Collector Current:
2 A
Gain Bandwidth Product fT:
5 MHz
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 125 C
Series:
FJBE2150D
DC Current Gain hFE Max:
35
Packaging:
Tube
Brand:
ON Semiconductor / Fairchild
Continuous Collector Current:
0.5 A
DC Collector/Base Gain hfe Min:
20
Pd - Power Dissipation:
110 W
Product Type:
BJTs - Bipolar Transistors
Factory Pack Quantity:
1000
Subcategory:
Transistors
Unit Weight:
0.066315 oz
Tags
FJB
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***el Electronic
Bipolar Transistors - BJT ESBC Rated NPN Silicon Transistor
***ical
Trans GP BJT NPN 800V 2A 110000mW 3-Pin(2+Tab) D2PAK Rail
***r Electronics
Power Bipolar Transistor, 2A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, TO-263AB, Plastic/Epoxy, 2 Pin
***rchild Semiconductor
The FJBE2150D is a low-cost, high-performance power switch designed to be used in an ESBC™ configuration in applications such as: power supplies, motor drivers, smart grid, or ignition switches. The power switch is designed to operate up to 1500 volts and up to 3 amps, while providing exceptionally low on-resistance and very low switching losses.The ESBC™ switch is designed to be driven using off-the-shelf power supply controllers or drivers. The ESBC™ MOSFET is a low-voltage, low-cost, surface-mount device that combines low-input capacitance and fast switching. The ESBC™ configuration further minimizes the required driving power because it does not have Miller capacitance.The FJBE2150D provides exceptional reliability and a large operating range due to its square Reverse-Bias-Safe-Operating-Area (RBSOA) and rugged design. The device is avalanche rated and has no parasitic transistors, so is not prone to static dv/dt failures.The power switch is manufactured using a dedicated high-voltage bipolar process and is packaged in high-voltage HV-D2PAK rated at 2500 V creepage and clearance.
Part # Mfg. Description Stock Price
FJBE2150DTU
DISTI # FJBE2150DTU-ND		ON SemiconductorTRANS NPN 800V 2A D2-PAK-2L
RoHS: Compliant
Container: Tube		Limited Supply - Call
    FJBE2150DTU
    DISTI # 96W6437    		ON SemiconductorNPN/1250V/3A / RAIL0
      Image Part # Description
      FJBE2150DTU

      Mfr.#: FJBE2150DTU

      OMO.#: OMO-FJBE2150DTU

      		 Bipolar Transistors - BJT ESBC Rated NPN Silicon Transistor
      FJBE2150DTU

      Mfr.#: FJBE2150DTU

      OMO.#: OMO-FJBE2150DTU-ON-SEMICONDUCTOR

      		 TRANS NPN 800V 2A D2-PAK-2L
      FJBE2150D

      Mfr.#: FJBE2150D

      OMO.#: OMO-FJBE2150D-1190

      		 New and Original
      Availability
      Stock:
      Available
      On Order:
      3500
      Enter Quantity:
      Current price of FJBE2150DTU is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
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