IPB042N10N3 G

Mfr. #:: IPB042N10N3 G
Manufacturer:: Infineon Technologies
Description:: Trans MOSFET N-CH 100V 100A 3-Pin(2+Tab) TO-263
Lifecycle:: New from this manufacturer.
Datasheet:: IPB042N10N3 G Datasheet
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More Information:: IPB042N10N3 G more Information

Product Attribute
Attribute Value

Manufacturer: Infineon Technologies

Product Category: Transistors - FETs, MOSFETs - Single

Series: OptiMOS 3

Packaging: Reel

Part-Aliases: IPB042N10N3GATMA1 IPB042N10N3GXT SP000446880

Unit-Weight: 0.139332 oz

Mounting-Style: SMD/SMT

Tradename: OptiMOS

Package-Case: TO-252-3

Technology: Si

Number-of-Channels: 1 Channel

Configuration: Single

Transistor-Type: 1 N-Channel

Pd-Power-Dissipation: 214 W

Maximum-Operating-Temperature: + 175 C

Minimum-Operating-Temperature: - 55 C

Fall-Time: 14 ns

Rise-Time: 59 ns

Vgs-Gate-Source-Voltage: 20 V

Id-Continuous-Drain-Current: 100 A

Vds-Drain-Source-Breakdown-Voltage: 100 V

Rds-On-Drain-Source-Resistance: 4.2 mOhms

Transistor-Polarity: N-Channel

Typical-Turn-Off-Delay-Time: 48 ns

Typical-Turn-On-Delay-Time: 27 ns

Channel-Mode: Enhancement

Tags: IPB042N10N3G, IPB042N10N3, IPB042N1, IPB042, IPB04, IPB0, IPB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

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IPB042N10N3 G More Information

Designing Power Systems: Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More

N-Channel OptiMOS™ Power MOSFETs: Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.

N-Channel OptiMOS™ Power MOSFETs - EXPANSION: Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More

Market price

Part #	Mfg.	Description	Stock	Price
IPB042N10N3GATMA1 DISTI # V72:2272_06378065	Infineon Technologies AG	Trans MOSFET N-CH 100V 137A Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	64	25:$2.0861 10:$2.3179 1:$2.9888
IPB042N10N3GE8187ATMA1 DISTI # V36:1790_06378068	Infineon Technologies AG	Trans MOSFET N-CH 600V 0.12A Automotive 4-Pin(3+Tab) SOT-223 T/R	0	1000000:$1.1490 500000:$1.1510 100000:$1.2560 10000:$1.4180 1000:$1.4440
IPB042N10N3GATMA1 DISTI # V36:1790_06378065	Infineon Technologies AG	Trans MOSFET N-CH 100V 137A Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	0	1000000:$1.0370 500000:$1.0390 100000:$1.1100 10000:$1.2140 1000:$1.2300
IPB042N10N3GATMA1 DISTI # IPB042N10N3GATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 100V 100A TO263-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	2929In Stock	500:$1.7743 100:$2.1596 10:$2.6870 1:$2.9900
IPB042N10N3GATMA1 DISTI # IPB042N10N3GATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 100V 100A TO263-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	2929In Stock	500:$1.7743 100:$2.1596 10:$2.6870 1:$2.9900
IPB042N10N3GATMA1 DISTI # IPB042N10N3GATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 100V 100A TO263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	2000In Stock	5000:$1.2797 2000:$1.3289 1000:$1.4273
IPB042N10N3GE8187ATMA1 DISTI # IPB042N10N3GE8187ATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 100V 100A TO263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	Temporarily Out of Stock	1000:$1.4438
IPB042N10N3 G DISTI # 30579993	Infineon Technologies AG	Trans MOSFET N-CH 100V 100A 3-Pin(2+Tab) TO-263 RoHS: Compliant	1000	6:$4.4125
IPB042N10N3GATMA1 DISTI # 31438812	Infineon Technologies AG	Trans MOSFET N-CH 100V 137A Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	1000	1000:$0.8271
IPB042N10N3GATMA1 DISTI # 33368863	Infineon Technologies AG	Trans MOSFET N-CH 100V 137A Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	1000	1000:$1.8125
IPB042N10N3 G DISTI # 30579618	Infineon Technologies AG	Trans MOSFET N-CH 100V 100A 3-Pin(2+Tab) TO-263 RoHS: Compliant	816	12:$2.2625
IPB042N10N3GATMA1 DISTI # 31010737	Infineon Technologies AG	Trans MOSFET N-CH 100V 137A Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	64	7:$2.9888
IPB042N10N3 G DISTI # IPB042N10N3 G	Infineon Technologies AG	Trans MOSFET N-CH 100V 100A 3-Pin TO-263 T/R (Alt: IPB042N10N3 G) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel	Asia - 5000	50000:$0.8333 25000:$0.8456 10000:$0.8582 5000:$0.8712 3000:$0.8984 2000:$0.9274 1000:$0.9583
IPB042N10N3GATMA1 DISTI # SP000446880	Infineon Technologies AG	Trans MOSFET N-CH 100V 100A 3-Pin TO-263 T/R (Alt: SP000446880) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel	Europe - 2706	10000:€0.7329 6000:€0.7849 4000:€0.8459 2000:€0.9159 1000:€1.0989
IPB042N10N3GXT DISTI # IPB042N10N3GATMA1	Infineon Technologies AG	Trans MOSFET N-CH 100V 100A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB042N10N3GATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	10000:$0.9049 6000:$0.9209 4000:$0.9529 2000:$0.9889 1000:$1.0259
IPB042N10N3GE8187ATMA1 DISTI # IPB042N10N3GE8187ATMA1	Infineon Technologies AG	Trans MOSFET N-CH 100V 100A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB042N10N3GE8187ATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	4000:$1.1900 6000:$1.1900 10000:$1.1900 1000:$1.2900 2000:$1.2900
IPB042N10N3GE8187ATMA1 DISTI # SP000939332	Infineon Technologies AG	Trans MOSFET N-CH 100V 100A 3-Pin TO-263 T/R (Alt: SP000939332) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel	Europe - 0	10000:€1.1900 4000:€1.2900 6000:€1.2900 2000:€1.3900 1000:€1.7900
IPB042N10N3GATMA1 DISTI # 47Y8047	Infineon Technologies AG	MOSFET Transistor, N Channel, 100 A, 100 V, 0.0036 ohm, 10 V, 2.7 V RoHS Compliant: Yes	0	500:$1.6600 250:$1.7700 100:$1.8900 50:$2.0500 25:$2.2100 10:$2.3600 1:$2.7800
IPB042N10N3 G DISTI # 726-IPB042N10N3G	Infineon Technologies AG	MOSFET N-Ch 100V 100A D2PAK-2 OptiMOS 3 RoHS: Compliant	22	1:$2.7500 10:$2.3400 100:$1.8700 500:$1.6400 1000:$1.3600 2000:$1.2600 5000:$1.2100
IPB042N10N3GATMA1 DISTI # 726-IPB042N10N3GATMA	Infineon Technologies AG	MOSFET N-Ch 100V 100A D2PAK-2 OptiMOS 3 RoHS: Compliant	3682	1:$2.6200 10:$2.2200 100:$1.7800 500:$1.5500 1000:$1.2900 2000:$1.2000 5000:$1.1500
IPB042N10N3GE818XT DISTI # 726-IPB042N10N3GEMA1	Infineon Technologies AG	MOSFET N-Ch 100V 100A D2PAK-2 RoHS: Compliant	0	1:$2.7900 10:$2.3700 100:$1.8900 500:$1.6600 1000:$1.3700 2000:$1.2800 5000:$1.2300
IPB042N10N3 G E8187 DISTI # 726-IPB042N10N3GE8	Infineon Technologies AG	MOSFET N-Ch 100V 100A D2PAK-2 RoHS: Compliant	0	1000:$1.3700 2000:$1.2800 5000:$1.2300
IPB042N10N3GATMA1	Infineon Technologies AG	Single N-Channel 100 V 4.2 mOhm 88 nC OptiMOS Power Mosfet - D2PAK RoHS: Not Compliant	1000Reel	1000:$1.2900
IPB042N10N3GATMA1 DISTI # 8275237	Infineon Technologies AG	MOSFET N-CH 100A 100V OPTIMOS3 TO263, PK	330	500:£1.0190 250:£1.1740 50:£1.3150 10:£1.5590
IPB042N10N3GATMA1 DISTI # 8275237P	Infineon Technologies AG	MOSFET N-CH 100A 100V OPTIMOS3 TO263, RL	930	500:£1.0190 250:£1.1740 50:£1.3150
IPB042N10N3G	Infineon Technologies AG	POWER FIELD-EFFECT TRANSISTOR, 100A I(D), 100V, 0.0042OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB	92	63:$3.7185 18:$4.0200 1:$6.0300
IPB042N10N3GATMA1 DISTI # IPB042N10N3GATMA1	Infineon Technologies AG	Transistor: N-MOSFET,unipolar,100V,100A,214W,PG-TO263-3	5	1000:$1.0496 100:$1.1262 10:$1.2951 3:$1.6104 1:$1.8779
IPB042N10N3 G DISTI # TMOSP9680	Infineon Technologies AG	N-CH 100V 100A4mOhm TO263-3 RoHS: Compliant	Stock DE - 50Stock HK - 0Stock US - 0	1000:$1.2400 2000:$1.1700 3000:$1.1008 4000:$0.9943 6000:$0.9587
IPB042N10N3 G DISTI # TMOS2121	Infineon Technologies AG	N-CH 100V 137A 4,2mOhm D2PAK RoHS: Compliant	Stock DE - 100Stock HK - 0Stock US - 0	1:$1.2400 3:$1.1700 11:$1.1008 38:$0.9943 127:$0.9587
IPB042N10N3GATMA1 DISTI # 2443431	Infineon Technologies AG	MOSFET, N CH, 100V, 100A, TO-263-3	865	500:£1.2700 250:£1.3600 100:£1.4500 10:£1.8200 1:£2.4200
IPB042N10N3 G	Infineon Technologies AG	RoHS(ship within 1day)	115	1:$3.9600 10:$2.9700 50:$2.6200 100:$2.2400 500:$2.0800 1000:$2.0100
IPB042N10N3GATMA1 DISTI # 2443431	Infineon Technologies AG	MOSFET, N CH, 100V, 100A, TO-263-3 RoHS: Compliant	865	10000:$1.7600 5000:$1.8200 2000:$1.9000 1000:$2.0500 500:$2.4700 100:$2.8200 10:$3.5300 1:$4.1400
IPB042N10N3G	Infineon Technologies AG	100V,100A,N Channel Power MOSFET	247	1:$1.8900 100:$1.5800 500:$1.3900 1000:$1.3500
IPB042N10N3GATMA1 DISTI # XSFP00000153641	Infineon Technologies AG	Single N-Channel 100 V 4.2 mOhm 88 nCOptiMOSPowerMosfet - D2PAK RoHS: Compliant	2000 in Stock0 on Order	2000:$1.7200 1000:$1.8400

Image	Part #	Description
	Mfr.#: IPB042N10N3GATMA1 OMO.#: OMO-IPB042N10N3GATMA1	MOSFET N-Ch 100V 100A D2PAK-2 OptiMOS 3
	Mfr.#: IPB042N10N3 G OMO.#: OMO-IPB042N10N3-G	MOSFET N-Ch 100V 100A D2PAK-2 OptiMOS 3
	Mfr.#: IPB042N03L G OMO.#: OMO-IPB042N03L-G	MOSFET N-Ch 30V 70A D2PAK-2 OptiMOS 3
	Mfr.#: IPB042N03LG OMO.#: OMO-IPB042N03LG-1190	New and Original
	Mfr.#: IPB042N10N3GATMA1-CUT TAPE OMO.#: OMO-IPB042N10N3GATMA1-CUT-TAPE-1190	New and Original
	Mfr.#: IPB042N10N OMO.#: OMO-IPB042N10N-1190	New and Original
	Mfr.#: IPB042N10N3 OMO.#: OMO-IPB042N10N3-1190	New and Original
	Mfr.#: IPB042N10N3G , 2SD1898-H OMO.#: OMO-IPB042N10N3G-2SD1898-H-1190	New and Original
	Mfr.#: IPB042N10N3GATMA1 OMO.#: OMO-IPB042N10N3GATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 100V 100A TO263-3
	Mfr.#: IPB042N10N3GE818XT OMO.#: OMO-IPB042N10N3GE818XT-317	RF Bipolar Transistors MOSFET N-Ch 100V 100A D2PAK-2

IPB042N10N3 G

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes