IPB04

IPB042N03L G vs IPB0401NM5SATMA1 vs IPB041N04NGATMA1

 
PartNumberIPB042N03L GIPB0401NM5SATMA1IPB041N04NGATMA1
DescriptionMOSFET N-Ch 30V 70A D2PAK-2 OptiMOS 3MOSFETMOSFET N-CH 40V 80A TO263-3
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-263-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current70 A--
Rds On Drain Source Resistance4.2 mOhms--
Vgs th Gate Source Threshold Voltage2.2 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge18 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation79 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameOptiMOS--
PackagingReelReel-
Height4.4 mm--
Length10 mm--
SeriesOptiMOS 3--
Transistor Type1 N-Channel--
Width9.25 mm--
BrandInfineon TechnologiesInfineon Technologies-
Forward Transconductance Min87 S--
Fall Time4.4 ns--
Product TypeMOSFETMOSFET-
Rise Time5.6 ns--
Factory Pack Quantity10001000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time28 ns--
Typical Turn On Delay Time7.4 ns--
Part # AliasesIPB042N03LGATMA1 IPB42N3LGXT SP000304124IPB0401NM5S SP004565816-
Unit Weight0.139332 oz--
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
IPB044N15N5ATMA1 MOSFET
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IPB042N10N3 G MOSFET N-Ch 100V 100A D2PAK-2 OptiMOS 3
IPB049NE7N3 G MOSFET N-Ch 75V 80A D2PAK-2 OptiMOS 3
IPB049NE7N3GATMA1 MOSFET N-Ch 75V 80A D2PAK-2 OptiMOS 3
IPB042N03L G MOSFET N-Ch 30V 70A D2PAK-2 OptiMOS 3
IPB049N08N5ATMA1 MOSFET N-Ch 80V 80A D2PAK-2
IPB048N15N5ATMA1 MOSFET
IPB048N15N5LFATMA1 MOSFET
IPB042N10N3GE818XT MOSFET N-Ch 100V 100A D2PAK-2
IPB042N10N3 G E8187 MOSFET N-Ch 100V 100A D2PAK-2
IPB0401NM5SATMA1 MOSFET
IPB049NE7N3GATMA1 MOSFET N-CH 75V 80A TO263-3
IPB044N15N5ATMA1 MOSFET N-CH 150V 174A TO263-7
IPB048N15N5LFATMA1 MOSFET N-CH 150V 120A TO263-3
IPB041N04NGATMA1 MOSFET N-CH 40V 80A TO263-3
IPB042N03LGATMA1 MOSFET N-CH 30V 70A TO-263-3
IPB042N10N3GATMA1 MOSFET N-CH 100V 100A TO263-3
IPB042N10N3GE8187ATMA1 MOSFET N-CH 100V 100A TO263-3
IPB048N06LGATMA1 MOSFET N-CH 60V 100A TO-263
IPB048N15N5ATMA1 MOSFET N-CH 150V 120A TO263-3
IPB049N06L3GATMA1 MOSFET N-CH 60V 80A TO263-3
IPB049N08N5ATMA1 MOSFET N-CH 80V TO263-3
Infineon Technologies
Infineon Technologies
IPB042N03LGATMA1 MOSFET LV POWER MOS
IPB042N03LG New and Original
IPB042N10N3GATMA1-CUT TAPE New and Original
IPB048N15N5ATMA1-CUT TAPE New and Original
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IPB041N04NG New and Original
IPB042N10N New and Original
IPB042N10N3 New and Original
IPB042N10N3 G Trans MOSFET N-CH 100V 100A 3-Pin(2+Tab) TO-263
IPB042N10N3G 100V,100A,N Channel Power MOSFET
IPB042N10N3G , 2SD1898-H New and Original
IPB042N10N3GATMA1 , 2SD1 New and Original
IPB042N10N3GATMA1INFINEO New and Original
IPB042N10N3GS New and Original
IPB048N06LG Trans MOSFET N-CH 60V 100A 3-Pin(2+Tab) TO-263 - Bulk (Alt: IPB048N06LG)
IPB048N06LGXT New and Original
IPB049N06L3 New and Original
IPB049N06L3G Power Field-Effect Transistor, 80A I(D), 60V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
IPB049N10N New and Original
IPB049NE7N3 New and Original
IPB049NE7N3G 75V,80A,N Channel Power MOSFET
IPB04CN10N G MOSFET N-Ch 100V 100A D2PAK-2
IPB04CN10NG New and Original
IPB04N03L New and Original
IPB049NE7N3 G Darlington Transistors MOSFET N-Ch 75V 80A D2PAK-2 OptiMOS 3
IPB049N06L3 G IGBT Transistors MOSFET N-Ch 60V 80A D2PAK-2
IPB042N10N3GE818XT RF Bipolar Transistors MOSFET N-Ch 100V 100A D2PAK-2
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