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IPB042N10N3GE818XT

IPB042N10N3GE818XT
Mfr. #:
IPB042N10N3GE818XT
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 100V 100A D2PAK-2
Lifecycle:
New from this manufacturer.
Datasheet:
IPB042N10N3GE818XT Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
IPB042N10N3GE818XT more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TO-263-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
100 V
Id - Continuous Drain Current:
100 A
Rds On - Drain-Source Resistance:
3.6 mOhms
Vgs th - Gate-Source Threshold Voltage:
2 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
117 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
214 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
OptiMOS
Packaging:
Reel
Height:
4.4 mm
Length:
10 mm
Series:
OptiMOS 3
Transistor Type:
1 N-Channel
Width:
9.25 mm
Brand:
Infineon Technologies
Forward Transconductance - Min:
73 S
Fall Time:
14 ns
Product Type:
MOSFET
Rise Time:
59 ns
Factory Pack Quantity:
1000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
48 ns
Typical Turn-On Delay Time:
27 ns
Part # Aliases:
IPB042N10N3GE8187ATMA1 SP000939332
Unit Weight:
0.139332 oz
Tags
IPB042N10N3GE, IPB042N10N3G, IPB042N10N3, IPB042N1, IPB042, IPB04, IPB0, IPB
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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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N-Channel OptiMOS™ Power MOSFETs - EXPANSION
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More
Part # Mfg. Description Stock Price
IPB042N10N3GE818XT
DISTI # 726-IPB042N10N3GEMA1		Infineon Technologies AGMOSFET N-Ch 100V 100A D2PAK-2
RoHS: Compliant		0
  • 1:$2.7900
  • 10:$2.3700
  • 100:$1.8900
  • 500:$1.6600
  • 1000:$1.3700
  • 2000:$1.2800
  • 5000:$1.2300
Image Part # Description
IPB042N10N3 G

Mfr.#: IPB042N10N3 G

OMO.#: OMO-IPB042N10N3-G

 MOSFET N-Ch 100V 100A D2PAK-2 OptiMOS 3
IPB042N10N3GE818XT

Mfr.#: IPB042N10N3GE818XT

OMO.#: OMO-IPB042N10N3GE818XT

 MOSFET N-Ch 100V 100A D2PAK-2
IPB042N10N3GATMA1-CUT TAPE

Mfr.#: IPB042N10N3GATMA1-CUT TAPE

OMO.#: OMO-IPB042N10N3GATMA1-CUT-TAPE-1190

 New and Original
IPB042N10N3

Mfr.#: IPB042N10N3

OMO.#: OMO-IPB042N10N3-1190

 New and Original
IPB042N10N3GATMA1

Mfr.#: IPB042N10N3GATMA1

OMO.#: OMO-IPB042N10N3GATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 100V 100A TO263-3
IPB042N10N3GATMA1 , 2SD1

Mfr.#: IPB042N10N3GATMA1 , 2SD1

OMO.#: OMO-IPB042N10N3GATMA1-2SD1-1190

 New and Original
IPB042N10N3GATMA1INFINEO

Mfr.#: IPB042N10N3GATMA1INFINEO

OMO.#: OMO-IPB042N10N3GATMA1INFINEO-1190

 New and Original
IPB042N10N3GE8187ATMA1

Mfr.#: IPB042N10N3GE8187ATMA1

OMO.#: OMO-IPB042N10N3GE8187ATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 100V 100A TO263-3
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Mfr.#: IPB042N10N3GS

OMO.#: OMO-IPB042N10N3GS-1190

 New and Original
IPB042N10N3GE818XT

Mfr.#: IPB042N10N3GE818XT

OMO.#: OMO-IPB042N10N3GE818XT-317

 RF Bipolar Transistors MOSFET N-Ch 100V 100A D2PAK-2
Availability
Stock:
Available
On Order:
3500
Enter Quantity:
Current price of IPB042N10N3GE818XT is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$2.79
$2.79
10
$2.37
$23.70
100
$1.89
$189.00
500
$1.66
$830.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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