 |  | |
| PartNumber | IPB042N10N3GE818XT | IPB042N10N3GE8187ATMA1 |
| Description | MOSFET N-Ch 100V 100A D2PAK-2 | MOSFET N-CH 100V 100A TO263-3 |
| Manufacturer | Infineon | - |
| Product Category | MOSFET | - |
| RoHS | Y | - |
| Technology | Si | - |
| Mounting Style | SMD/SMT | - |
| Package / Case | TO-263-3 | - |
| Number of Channels | 1 Channel | - |
| Transistor Polarity | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 100 V | - |
| Id Continuous Drain Current | 100 A | - |
| Rds On Drain Source Resistance | 3.6 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - |
| Vgs Gate Source Voltage | 20 V | - |
| Qg Gate Charge | 117 nC | - |
| Minimum Operating Temperature | - 55 C | - |
| Maximum Operating Temperature | + 175 C | - |
| Pd Power Dissipation | 214 W | - |
| Configuration | Single | - |
| Channel Mode | Enhancement | - |
| Tradename | OptiMOS | - |
| Packaging | Reel | - |
| Height | 4.4 mm | - |
| Length | 10 mm | - |
| Series | OptiMOS 3 | - |
| Transistor Type | 1 N-Channel | - |
| Width | 9.25 mm | - |
| Brand | Infineon Technologies | - |
| Forward Transconductance Min | 73 S | - |
| Fall Time | 14 ns | - |
| Product Type | MOSFET | - |
| Rise Time | 59 ns | - |
| Factory Pack Quantity | 1000 | - |
| Subcategory | MOSFETs | - |
| Typical Turn Off Delay Time | 48 ns | - |
| Typical Turn On Delay Time | 27 ns | - |
| Part # Aliases | IPB042N10N3GE8187ATMA1 SP000939332 | - |
| Unit Weight | 0.139332 oz | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
IPB042N10N3GE818XT | MOSFET N-Ch 100V 100A D2PAK-2 | |
| IPB042N10N3GE8187ATMA1 | MOSFET N-CH 100V 100A TO263-3 | ||
| IPB042N10N3GE818XT | RF Bipolar Transistors MOSFET N-Ch 100V 100A D2PAK-2 |