 | | | |
| PartNumber | IPB042N10N3 G | IPB042N03L G | IPB042N03LGATMA1 |
| Description | MOSFET N-Ch 100V 100A D2PAK-2 OptiMOS 3 | MOSFET N-Ch 30V 70A D2PAK-2 OptiMOS 3 | MOSFET LV POWER MOS |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | PG-TO-263-3 | TO-263-3 | TO-263-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | 30 V | - |
| Id Continuous Drain Current | 100 A | 70 A | - |
| Rds On Drain Source Resistance | 4.2 mOhms | 4.2 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2 V | 2.2 V | - |
| Vgs Gate Source Voltage | 10 V | 20 V | - |
| Qg Gate Charge | 88 nC | 18 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 214 W | 79 W | - |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | OptiMOS | OptiMOS | OptiMOS |
| Packaging | Reel | Reel | Reel |
| Height | 4.4 mm | 4.4 mm | 4.4 mm |
| Length | 10 mm | 10 mm | 10 mm |
| Series | OptiMOS 3 | OptiMOS 3 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 9.25 mm | 9.25 mm | 9.25 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Forward Transconductance Min | 73 S | 87 S | - |
| Fall Time | 14 ns | 4.4 ns | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 59 ns | 5.6 ns | - |
| Factory Pack Quantity | 1000 | 1000 | - |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 48 ns | 28 ns | - |
| Typical Turn On Delay Time | 27 ns | 7.4 ns | - |
| Part # Aliases | IPB042N10N3GATMA1 IPB42N1N3GXT SP000446880 | IPB042N03LGATMA1 IPB42N3LGXT SP000304124 | G IPB042N03L IPB42N3LGXT SP000304124 |
| Unit Weight | 0.139332 oz | 0.139332 oz | 0.139332 oz |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
IPB042N10N3GATMA1 | MOSFET N-Ch 100V 100A D2PAK-2 OptiMOS 3 | |
| IPB042N10N3 G | MOSFET N-Ch 100V 100A D2PAK-2 OptiMOS 3 | ||
| IPB042N03L G | MOSFET N-Ch 30V 70A D2PAK-2 OptiMOS 3 | ||
| IPB042N10N3GE818XT | MOSFET N-Ch 100V 100A D2PAK-2 | ||
| IPB042N10N3 G E8187 | MOSFET N-Ch 100V 100A D2PAK-2 | ||
| IPB042N03LGATMA1 | MOSFET N-CH 30V 70A TO-263-3 | ||
| IPB042N10N3GATMA1 | MOSFET N-CH 100V 100A TO263-3 | ||
| IPB042N10N3GE8187ATMA1 | MOSFET N-CH 100V 100A TO263-3 | ||
Infineon Technologies |
IPB042N03LGATMA1 | MOSFET LV POWER MOS | |
| IPB042N03LG | New and Original | ||
| IPB042N10N3GATMA1-CUT TAPE | New and Original | ||
| IPB042N10N | New and Original | ||
| IPB042N10N3 | New and Original | ||
| IPB042N10N3 G | Trans MOSFET N-CH 100V 100A 3-Pin(2+Tab) TO-263 | ||
| IPB042N10N3G | 100V,100A,N Channel Power MOSFET | ||
| IPB042N10N3G , 2SD1898-H | New and Original | ||
| IPB042N10N3GATMA1 , 2SD1 | New and Original | ||
| IPB042N10N3GATMA1INFINEO | New and Original | ||
| IPB042N10N3GS | New and Original | ||
| IPB042N10N3GE818XT | RF Bipolar Transistors MOSFET N-Ch 100V 100A D2PAK-2 |