IRF7862TRPBF

Mfr. #:: IRF7862TRPBF
Manufacturer:: Infineon / IR
Description:: MOSFET MOSFT 30V 21A 3.3mOhm 30nC Qg
Lifecycle:: New from this manufacturer.
Datasheet:: IRF7862TRPBF Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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HTML Datasheet:: IRF7862TRPBF Datasheet IRF7862TRPBF Datasheet (P4-P6)IRF7862TRPBF Datasheet (P7-P9)
ECAD Model:
More Information:: IRF7862TRPBF more Information

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: SO-8

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 30 V

Id - Continuous Drain Current:: 21 A

Rds On - Drain-Source Resistance:: 4.5 mOhms

Vgs - Gate-Source Voltage:: 20 V

Qg - Gate Charge:: 30 nC

Pd - Power Dissipation:: 2.5 W

Configuration:: Single

Packaging:: Reel

Height:: 1.75 mm

Length:: 4.9 mm

Transistor Type:: 1 N-Channel

Width:: 3.9 mm

Brand:: Infineon / IR

Product Type:: MOSFET

Factory Pack Quantity:: 4000

Subcategory:: MOSFETs

Part # Aliases:: SP001577668

Unit Weight:: 0.019048 oz

Tags: IRF7862T, IRF786, IRF78, IRF7, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRF7862TRPBF Description

***Components: On a Reel of 4000, N-Channel MOSFET, 21 A, 30 V, 8-Pin SOIC Infineon IRF7862TRPBF

***ure Electronics: Single N-Channel 30 V 4.5 mOhm 45 nC HEXFET® Power Mosfet - SOIC-8

***ernational Rectifier: 30V Single N-Channel HEXFET Power MOSFET in a SO-8 package

***ied Electronics & Automation: MOSFET; N Ch.; 30V; 21A; 3.7 MOHM; 30 NC QG; SO-8; Pb-Free

***p One Stop Global: Trans MOSFET N-CH 30V 21A 8-Pin SOIC T/R

***ineon: Benefits: RoHS Compliant | Target Applications: Battery Protection; Load Switch High Side; Load Switch Low Side

***i-Key: MOSFET N-CH 30V 21A 8-SOIC

***ukat: N-Ch 30V 21A 2,5W 0,0033R SO8

***ark: Mosfet IC; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:21A; On Resistance, Rds(on):3.7mohm; Rds(on) Test Voltage, Vgs:20V; Package/Case:8-SOIC; No. of Pins:8 ;RoHS Compliant: Yes

***ment14 APAC: Prices include import duty and tax. MOSFET, N-CH, 30V, 21A, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.003ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.35V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:HEXFET Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)

***nell: MOSFET, CANALE N, 30V, 21A, SOIC; Polarità Transistor:Canale N; Corrente Continua di Drain Id:21A; Tensione Drain Source Vds:30V; Resistenza di Attivazione Rds(on):0.003ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:2.35V; Dissipazione di Potenza Pd:2.5W; Modello Case Transistor:SOIC; No. di Pin:8Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:HEXFET Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)

IRF7862TRPBF More Information

30V HEXFET® Power MOSFETs: Infineon 30V HEXFET® Power MOSFETs are designed for high density applications requiring small size, high efficiency and improved thermal conduction, making them ideally suited for notebook applications and point-of-load (POL) converters used in servers, as well as advanced telecom and datacom systems. These 30V HEXFET® Power MOSFETs offer significant gate oxide improvement over previous generations and provide high performance as part of a system-wide solution to optimize 12VIN / 1-3VOUT DC-DC synchronous buck converter applications. Low RDS(on) and low Qg makes these Infineon 30V HEXFET® Power MOSFETs ideally suited for point-of-load converter applications. The low conduction losses improve full-load efficiency and thermal performance while the low switching losses help to achieve high efficiency even at light loads.Learn More

Market price

Part #	Mfg.	Description	Stock	Price
IRF7862TRPBF DISTI # V72:2272_13890538	Infineon Technologies AG	Trans MOSFET N-CH 30V 21A 8-Pin SOIC T/R	2085	1000:$0.4430 500:$0.4676 250:$0.5195 100:$0.5772 25:$0.7181 10:$0.7215 1:$0.8115
IRF7862TRPBF DISTI # IRF7862TRPBFCT-ND	Infineon Technologies AG	MOSFET N-CH 30V 21A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	3197In Stock	1000:$0.6159 500:$0.7632 100:$0.9658 10:$1.2050 1:$1.3500
IRF7862TRPBF DISTI # IRF7862TRPBFDKR-ND	Infineon Technologies AG	MOSFET N-CH 30V 21A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	3197In Stock	1000:$0.6159 500:$0.7632 100:$0.9658 10:$1.2050 1:$1.3500
IRF7862TRPBF DISTI # IRF7862TRPBFTR-ND	Infineon Technologies AG	MOSFET N-CH 30V 21A 8-SOIC RoHS: Compliant Min Qty: 4000 Container: Tape & Reel (TR)	On Order	4000:$0.5623
IRF7862TRPBF DISTI # 31077179	Infineon Technologies AG	Trans MOSFET N-CH 30V 21A 8-Pin SOIC T/R	4000	4000:$0.4685
IRF7862TRPBF DISTI # 30195965	Infineon Technologies AG	Trans MOSFET N-CH 30V 21A 8-Pin SOIC T/R	2085	1000:$0.4430 500:$0.4676 250:$0.5195 100:$0.5772 25:$0.7181 20:$0.7215
IRF7862TRPBF DISTI # IRF7862TRPBF	Infineon Technologies AG	Trans MOSFET N-CH 30V 21A 8-Pin SOIC T/R - Tape and Reel (Alt: IRF7862TRPBF) RoHS: Compliant Min Qty: 4000 Container: Reel	Americas - 0	4000:$0.3739 8000:$0.3609 16000:$0.3479 24000:$0.3359 40000:$0.3299
IRF7862TRPBF DISTI # IRF7862TRPBF	Infineon Technologies AG	Trans MOSFET N-CH 30V 21A 8-Pin SOIC T/R (Alt: IRF7862TRPBF) RoHS: Compliant Min Qty: 4000 Container: Tape and Reel	Asia - 0	4000:$0.3984 8000:$0.3820 12000:$0.3768 20000:$0.3622 40000:$0.3575 100000:$0.3486 200000:$0.3401
IRF7862TRPBF DISTI # SP001577668	Infineon Technologies AG	Trans MOSFET N-CH 30V 21A 8-Pin SOIC T/R (Alt: SP001577668) RoHS: Compliant Min Qty: 4000 Container: Tape and Reel	Europe - 0	4000:€0.4079 8000:€0.3339 16000:€0.3059 24000:€0.2829 40000:€0.2619
IRF7862TRPBF DISTI # 32AC7476	Infineon Technologies AG	MOSFET, N-CH, 30V, 21A, SOIC,Transistor Polarity:N Channel,Continuous Drain Current Id:21A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.003ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.35V,Power Dissipation RoHS Compliant: Yes	1889	1:$1.0700 10:$0.9100 25:$0.8400 50:$0.7690 100:$0.6990 250:$0.6590 500:$0.6180 1000:$0.4880
IRF7862TRPBF DISTI # 70017883	Infineon Technologies AG	MOSFET,N Ch.,30V,21A,3.7 MOHM,30 NC QG,SO-8,Pb-Free RoHS: Compliant	0	4000:$1.2410
IRF7862TRPBF DISTI # 942-IRF7862TRPBF	Infineon Technologies AG	MOSFET MOSFT 30V 21A 3.3mOhm 30nC Qg RoHS: Compliant	416	1:$1.0700 10:$0.9100 100:$0.6990 500:$0.6180 1000:$0.4880 4000:$0.4330
IRF7862TRPBF	International Rectifier	RoHS: Not Compliant	3350	1000:$0.4300 500:$0.4600 100:$0.4800 25:$0.5000 1:$0.5300
IRF7862TRPBF DISTI # 1300962P	Infineon Technologies AG	MOSFET HEXFET N-CH 30V 21A SOIC8, RL	3020	50:£0.2270
IRF7862TRPBF	International Rectifier		121
IRF7862TRPBF	International Rectifier		2025
IRF7862TRPBF	International Rectifier		3868
IRF7862TRPBF DISTI # IRF7862PBF-GURT	Infineon Technologies AG	N-Ch 30V 21A 2,5W 0,0033R SO8 RoHS: Compliant	0	50:€0.3300 100:€0.2900 500:€0.2700 2000:€0.2600
IRF7862TRPBF DISTI # XSLY00000000859	INFINEON/IR	SO-8 RoHS: Compliant	4000	4000:$0.4000
IRF7862TRPBF DISTI # XSFP00000152691	Infineon Technologies AG	PowerField-EffectTransistor,N-Channel,Metal-oxideSemiconductor FET RoHS: Compliant	16152	4000:$0.7200 16152:$0.6545
IRF7862TRPBF DISTI # 2777398	Infineon Technologies AG	MOSFET, N-CH, 30V, 21A, SOIC RoHS: Compliant	1889	5:$1.3600 25:$1.1800 100:$0.9640 250:$0.8140 500:$0.7050 1000:$0.6660 5000:$0.6320
IRF7862TRPBF DISTI # 2777398	Infineon Technologies AG	MOSFET, N-CH, 30V, 21A, SOIC RoHS: Compliant	2204	5:£0.4390 25:£0.3640 100:£0.3260 250:£0.3010 500:£0.2810
IRF7862TRPBF DISTI # C1S322000486661	Infineon Technologies AG	Trans MOSFET N-CH 30V 21A 8-Pin SOIC T/R RoHS: Compliant	2085	250:$0.5195 100:$0.5772 25:$0.7181 10:$0.7215
IRF7862TRPBF DISTI # C1S322000486652	Infineon Technologies AG	Trans MOSFET N-CH 30V 21A 8-Pin SOIC T/R RoHS: Compliant	4000	4000:$0.4460

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Availability

Stock:: Available
On Order:: 1985
Enter Quantity:

Current price of IRF7862TRPBF is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$1.06~~; ~~$1.06~~

10: ~~$0.91~~; ~~$9.10~~

100: ~~$0.70~~; ~~$69.90~~

500: ~~$0.62~~; ~~$309.00~~

1000: ~~$0.49~~; ~~$488.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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IRF7862TRPBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes