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IRF7862TRPBF

P1-P3P4-P6P7-P9
IRF7862PbF
4 www.irf.com
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
1 10 100
V
DS
, Drain-to-Source Voltage (V)
100
1000
10000
100000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
V
GS
= 0V, f = 1 MHZ
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
C
oss
C
rss
C
iss
0.2 0.4 0.6 0.8 1.0 1.2
V
SD
, Source-to-Drain Voltage (V)
1.0
10
100
1000
I
S
D
,
R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
T
J
= 25°C
T
J
= 150°C
V
GS
= 0V
0.1 1.0 10 100
V
DS
, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
OPERATION IN THIS AREA
LIMITED BY R
DS
(on)
T
A
= 25°C
Tj = 150°C
Single Pulse
100µsec
1msec
10msec
0 5 10 15 20 25 30 35
Q
G
,
Total Gate Charge (nC)
0.0
1.0
2.0
3.0
4.0
5.0
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
V
DS
= 24V
V
DS
= 15V
I
D
= 16A
IRF7862PbF
www.irf.com 5
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 9. Maximum Drain Current vs.
Ambient Temperature
Fig 10. Threshold Voltage vs. Temperature
25 50 75 100 125 150
T
A
, Ambient Temperature (°C)
0
5
10
15
20
25
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
-75 -50 -25 0 25 50 75 100 125 150
T
J
, Temperature ( °C )
1.0
1.3
1.5
1.8
2.0
2.3
2.5
V
G
S
(
t
h
)
,
G
a
t
e
T
h
r
e
s
h
o
l
d
V
o
l
t
a
g
e
(
V
)
I
D
= 250µA
1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100
t
1
, Rectangular Pulse Duration (sec)
0.0001
0.001
0.01
0.1
1
10
100
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
t
h
J
A
)
°
C
/
W
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Ri (°C/W) τi (sec)
1.242 0.000172
4.759 0.031397
28.506 1.2211
15.507 44.5
τ
J
τ
J
τ
1
τ
1
τ
2
τ
2
τ
3
τ
3
R
1
R
1
R
2
R
2
R
3
R
3
Ci= τi/Ri
Ci= τi/Ri
τ
A
τ
A
τ
4
τ
4
R
4
R
4
Notes:
1. Duty factor D = t / t
2
. Peak T = P x Z + T
1 2
J DM thJA A
P
t
t
DM
1
2
IRF7862PbF
6 www.irf.com
Fig 13. Maximum Avalanche Energy
vs. Drain Current
Fig 12. On-Resistance vs. Gate Voltage
Fig 15. Gate Charge Test Circuit
1K
VCC
DUT
0
L
S
20K
Fig 14. Unclamped Inductive Test Circuit
and Waveform
t
p
V
(BR)DSS
I
AS
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
V
DS
+
-
V
DD
DRIVER
A
15V
20V
Fig 16. Gate Charge Waveform
Vds
Vgs
Id
Vgs(th)
Qgs1
Qgs2QgdQgodr
25 50 75 100 125 150
Starting T
J
, Junction Temperature (°C)
0
200
400
600
800
1000
1200
1400
1600
E
A
S
,
S
i
n
g
l
e
P
u
l
s
e
A
v
a
l
a
n
c
h
e
E
n
e
r
g
y
(
m
J
)
I
D
TOP 1.0A
1.4A
BOTTOM 16A
2 3 4 5 6 7 8 9 10 11 12
V
GS,
Gate -to -Source Voltage (V)
2
4
6
8
10
12
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
m
Ω
)
I
D
= 21A
T
J
= 25°C
T
J
= 125°C
P1-P3P4-P6P7-P9

IRF7862TRPBF

Mfr. #:
Buy IRF7862TRPBF
Manufacturer:
Infineon / IR
Description:
MOSFET MOSFT 30V 21A 3.3mOhm 30nC Qg
Lifecycle:
New from this manufacturer.
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