SPD18P06P G

Mfr. #:: SPD18P06P G
Manufacturer:: Infineon Technologies
Description:: MOSFET P-Ch -60V -18.6A DPAK-2
Lifecycle:: New from this manufacturer.
Datasheet:: SPD18P06P G Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: PG-TO-252-3

Number of Channels:: 1 Channel

Transistor Polarity:: P-Channel

Vds - Drain-Source Breakdown Voltage:: 60 V

Id - Continuous Drain Current:: 18.6 A

Rds On - Drain-Source Resistance:: 130 mOhms

Vgs th - Gate-Source Threshold Voltage:: 4 V

Vgs - Gate-Source Voltage:: 10 V

Qg - Gate Charge:: 22 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 175 C

Pd - Power Dissipation:: 80 W

Configuration:: Single

Channel Mode:: Enhancement

Tradename:: SIPMOS

Packaging:: Reel

Height:: 2.3 mm

Length:: 6.5 mm

Series:: SPD18P06

Transistor Type:: 1 P-Channel

Width:: 6.22 mm

Brand:: Infineon Technologies

Forward Transconductance - Min:: 4 S

Fall Time:: 11 ns

Product Type:: MOSFET

Rise Time:: 5.8 ns

Factory Pack Quantity:: 2500

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 24.5 ns

Typical Turn-On Delay Time:: 12 ns

Part # Aliases:: SP000443926 SPD18P06PGBTMA1 SPD18P6PGXT

Unit Weight:: 0.139332 oz

Tags: SPD18P06PG, SPD18P06P, SPD18, SPD1, SPD

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

Market price

Part #	Mfg.	Description	Stock	Price
SPD18P06PGBTMA1 DISTI # SPD18P06PGBTMA1CT-ND	Infineon Technologies AG	MOSFET P-CH 60V 18.6A TO252-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	3In Stock	1000:$0.5743 500:$0.7274 100:$0.9380 10:$1.1870 1:$1.3400
SPD18P06PGBTMA1 DISTI # SPD18P06PGBTMA1DKR-ND	Infineon Technologies AG	MOSFET P-CH 60V 18.6A TO252-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	3In Stock	1000:$0.5743 500:$0.7274 100:$0.9380 10:$1.1870 1:$1.3400
SPD18P06PGBTMA1 DISTI # SPD18P06PGBTMA1TR-ND	Infineon Technologies AG	MOSFET P-CH 60V 18.6A TO252-3 RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	On Order	2500:$0.5204
SPD18P06PGBT DISTI # SPD18P06PGBTMA1	Infineon Technologies AG	Trans MOSFET P-CH 60V 18.6A 3-Pin(2+Tab) TO-252 - Tape and Reel (Alt: SPD18P06PGBTMA1) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.3889 5000:$0.3749 10000:$0.3609 15000:$0.3489 25000:$0.3429
SPD18P06PGBTMA1 DISTI # 47W3761	Infineon Technologies AG	MOSFET, P CHANNEL, 60V, 18.6A, TO-252,Transistor Polarity:P Channel,Continuous Drain Current Id:-18.6A,Drain Source Voltage Vds:-60V,On Resistance Rds(on):0.1ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-3V RoHS Compliant: Yes	0	1:$1.1100 10:$0.9460 100:$0.7270 500:$0.6430 1000:$0.5330
SPD18P06P G DISTI # 726-SPD18P06P	Infineon Technologies AG	MOSFET P-Ch -60V -18.6A DPAK-2 RoHS: Compliant	296	1:$1.1100 10:$0.9460 100:$0.7270 500:$0.6430 1000:$0.5070 2500:$0.4500
SPD18P06PGBTMA1 DISTI # 726-SPD18P06PGBTMA1	Infineon Technologies AG	MOSFET P-Ch -60V -18.6A DPAK-2 RoHS: Compliant	0	1:$1.1100 10:$0.9460 100:$0.7270 500:$0.6430 1000:$0.5070 2500:$0.4500
SPD18P06PG	Infineon Technologies AG	Power Field-Effect Transistor, 18.6A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AB RoHS: Compliant	64200	1000:$0.4500 500:$0.4700 100:$0.4900 25:$0.5100 1:$0.5500
SPD18P06PGBTMA1 DISTI # 7528491	Infineon Technologies AG	MOSFET P-CHANNEL 60V 18.6A TO252, PK	65	5:£0.8580 10:£0.6840 20:£0.6700 40:£0.6560 75:£0.6160
SPD18P06P G	Infineon Technologies AG		470	354:$1.5180 164:$1.7020 1:$3.6800
SPD18P06PG	Infineon Technologies AG	Power Field-Effect Transistor, 18.6A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AB RoHS: Compliant	Europe - 2400
SPD18P06P G	Infineon Technologies AG		701
SPD18P06P G	Infineon Technologies AG	RoHS(ship within 1day)	588	1:$2.2900 10:$1.7200 50:$1.4300 100:$1.1400 500:$0.9700 1000:$0.9200
SPD18P06PGBTMA1 DISTI # 2212859	Infineon Technologies AG	MOSFET, P-CH, 60V, 18.6A, TO-252 RoHS: Compliant	0	5:£0.6830 25:£0.6280 100:£0.5610 250:£0.5290 500:£0.4970
SPD18P06PGBTMA1 DISTI # 2212859	Infineon Technologies AG	MOSFET, P-CH, 60V, 18.6A, TO-252 RoHS: Compliant	0	1:$1.7600 10:$1.5100 100:$1.1600 500:$1.0200 1000:$0.9090

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Availability

Stock:: 11
On Order:: 1994
Enter Quantity:

Current price of SPD18P06P G is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$1.10~~; ~~$1.10~~

10: ~~$0.95~~; ~~$9.46~~

100: ~~$0.73~~; ~~$72.70~~

500: ~~$0.64~~; ~~$321.50~~

1000: ~~$0.51~~; ~~$507.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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SPD18P06P G

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes