IRG4PH40UDPBF

Mfr. #:: IRG4PH40UDPBF
Manufacturer:: Infineon Technologies
Description:: IGBT Transistors 1200V UltraFast 5-40kHz
Lifecycle:: New from this manufacturer.
Datasheet:: IRG4PH40UDPBF Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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More Information:: IRG4PH40UDPBF more Information

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: IGBT Transistors

RoHS:: Y

Technology:: Si

Package / Case:: TO-247-3

Mounting Style:: Through Hole

Configuration:: Single

Collector- Emitter Voltage VCEO Max:: 1.2 kV

Collector-Emitter Saturation Voltage:: 2.43 V

Maximum Gate Emitter Voltage:: 20 V

Continuous Collector Current at 25 C:: 41 A

Pd - Power Dissipation:: 160 W

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Packaging:: Tube

Continuous Collector Current Ic Max:: 41 A

Height:: 20.7 mm

Length:: 15.87 mm

Width:: 5.31 mm

Brand:: Infineon Technologies

Gate-Emitter Leakage Current:: 100 nA

Product Type:: IGBT Transistors

Factory Pack Quantity:: 400

Subcategory:: IGBTs

Part # Aliases:: SP001537144

Unit Weight:: 1.340411 oz

Tags: IRG4PH40UD, IRG4PH40U, IRG4PH4, IRG4PH, IRG4P, IRG4, IRG

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRG4PH40UDPBF Description

***ical: Trans IGBT Chip N-CH 1.2KV 41A 3-Pin(3+Tab) TO-247AC Tube

***ark: IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:41A; Collector Emitter Saturation Voltage, Vce(sat):3.1V; Power Dissipation, Pd:160W; Package/Case:TO-247AC ;RoHS Compliant: Yes

***ment14 APAC: IGBT, 1200V, 30A, TO-247AC; Transistor Type:IGBT; DC Collector Current:41A; Collector Emitter Voltage Vces:3.5V; Power Dissipation Pd:160W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:30A; Current Temperature:25°C; Device Marking:IRG4PH40UD; Fall Time Max:150ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Max:160W; Power Dissipation Pd:160W; Power Dissipation Pd:160W; Pulsed Current Icm:120A; Rise Time:59ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1.2kV

***p One Stop Global: Trans IGBT Chip N-CH 1200V 30A 160000mW 3-Pin(3+Tab) TO-247AC Tube

***ineon SCT: 1200V UltraFast 4-20 kHz Copack IGBT in a TO-247AC package, TO247COPAK-3, RoHS

***ure Electronics: IRG4PH40KDPBF Series 1200 V 15 A N-Channel UltraFast IGBT - TO-247AC

***trelec: IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 1200 V Collector-emitter saturation voltage: 2.74 V Current release time: 220 ns Power dissipation: 160 W

***ment14 APAC: SINGLE IGBT, 1.2KV, 30A; Transistor Type; Transistor Type:IGBT; DC Collector Current:30A; Collector Emitter Voltage Vces:3.4V; Power Dissipation Pd:160W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Ic Continuous a Max:30A; Current Temperature:25°C; Fall Time Max:330ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247; Power Dissipation Max:160W; Power Dissipation Pd:160W; Power Dissipation Pd:160W; Pulsed Current Icm:60A; Rise Time:31ns; Short Circuit Withstand Time Min:10µs; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1.2kV

***ineon SCT: 1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC package, TO247-3, RoHS

***ure Electronics: IRG4PH40K Series 1200 V 15 A Through Hole UltraFast IGBT - TO-247AC

***ark: IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:30A; Collector Emitter Saturation Voltage, Vce(sat):3.4V; Power Dissipation, Pd:160W; Package/Case:TO-247AC ;RoHS Compliant: Yes

***ment14 APAC: IGBT, 1200V, 30A, TO-247AC; Transistor Type:IGBT; DC Collector Current:30A; Collector Emitter Voltage Vces:2.74V; Power Dissipation Pd:160W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Ic Continuous a Max:30A; Current Temperature:25°C; Device Marking:IRG4PH40KPBF; Fall Time Max:230ns; Fall Time tf:230ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Max:160W; Power Dissipation Pd:160W; Pulsed Current Icm:60A; Rise Time:22ns; Short Circuit Withstand Time Min:10µs; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1.2kV

***ical: Trans IGBT Chip N-CH 1200V 30A 333000mW 3-Pin(3+Tab) TO-247 Tube

*** Stop Electro: Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel, TO-247AB

***emi: IGBT, 1200V, 15A, Field Stop Trench

***ark: RAIL/1200V 15A FS2 Trench IGBT

***el Electronic: IC REG LINEAR 24V 500MA TO252-3

***rchild Semiconductor: Using innovative field stop trench IGBT technology, Fairchild’s new series of field stop trench IGBTs offer the optimum performance for hard switching application such as solar inverter, UPS, welder and PFC applications.

***ical: Trans IGBT Chip N-CH 1200V 50A 428000mW 3-Pin(3+Tab) TO-247 Tube

***r Electronics: Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, TO-247AB

***emi: IGBT, 1200V, 25A Field Stop Trench

***ark: RAIL/1200V 25A FS2 Trench IGBT

***rchild Semiconductor: Using innovative field stop trench IGBT technology, Fairchild’s new series of field stop trench IGBTs offer the optimum performance for hard switching application such as solar inverter, UPS, welder and PFC applications.

***ical: Trans IGBT Chip N-CH 1.2KV 30A 3-Pin(3+Tab) TO-247AC

***ernational Rectifier: 1200V UltraFast 4-20 kHz Copack IGBT in a TO-247AC package

***S.I.T. Europe - USA - Asia: Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel, TO-247AC

***or: IGBT W/ULTRAFAST SOFT RECOVERY D

***(Formerly Allied Electronics): MOSFET; 1200V; 30.000A; COPAK-247

***ment14 APAC: IGBT,N CH,1200V,30A,TO-247AC; Transistor Type:IGBT; DC Collector Current:30A; Collector Emitter Voltage Vces:2.05V; Power Dissipation Pd:180W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:180W

***ure Electronics: IXDH20N120D1 Series 1200 V 38 A N-Channel High Voltage IGBT - TO-247AD

***ical: Trans IGBT Chip N-CH 1200V 38A 200000mW 3-Pin(3+Tab) TO-247AD

***trelec: IGBT Housing type: TO-247AD Collector-emitter breakdown voltage: 1200 V Collector-emitter saturation voltage: 2.4 V Current release time: 70 ns Power dissipation: 200 W

IRG4PH40UDPBF More Information

300-1200V IGBTs: Infineon Rectifier has an extensive portfolio of IGBTs that ranges from 300V to 1200V and achieves the highest performance for specific application requirements. The Infineon IGBT portfolio includes the new ultra-fast IRG7PH 1200V Trench IGBTs that offer higher system efficiency while cutting switching losses and delivering higher switching frequencies. International Infineon IRG7PH ultra-fast 1200V IGBTs utilize thin wafer Field-Stop Trench technology that significantly reduces switching and conduction losses to deliver higher power density and greater efficiency at higher frequencies.Learn More

Market price

Part #	Mfg.	Description	Stock	Price
IRG4PH40UDPBF DISTI # V99:2348_13891837	Infineon Technologies AG	Trans IGBT Chip N-CH 1.2KV 41A 3-Pin(3+Tab) TO-247AC Tube RoHS: Compliant	400	1:$3.4745
IRG4PH40UDPBF DISTI # IRG4PH40UDPBF-ND	Infineon Technologies AG	IGBT 1200V 41A 160W TO247AC RoHS: Compliant Min Qty: 1 Container: Bag	1790In Stock	1000:$3.4932 500:$4.1419 100:$4.8655 10:$5.9380 1:$6.6100
IRG4PH40UDPBF DISTI # 29570040	Infineon Technologies AG	Trans IGBT Chip N-CH 1.2KV 41A 3-Pin(3+Tab) TO-247AC Tube RoHS: Compliant	774	500:$2.7189 250:$2.7934 100:$2.8721 50:$2.9554 25:$3.0436 4:$3.1372
IRG4PH40UDPBF DISTI # 32372550	Infineon Technologies AG	Trans IGBT Chip N-CH 1.2KV 41A 3-Pin(3+Tab) TO-247AC Tube RoHS: Compliant	400	2:$3.4745
IRG4PH40UDPBF DISTI # SP001537144	Infineon Technologies AG	Trans IGBT Chip N-CH 1.2KV 41A 3-Pin(3+Tab) TO-247AC (Alt: SP001537144) RoHS: Compliant Min Qty: 1	Europe - 350	1:€3.2900 10:€2.9900 25:€2.8900 50:€2.7900 100:€2.6900 500:€2.5900 1000:€2.3900
IRG4PH40UDPBF DISTI # IRG4PH40UDPBF	Infineon Technologies AG	Trans IGBT Chip N-CH 1.2KV 41A 3-Pin(3+Tab) TO-247AC - Rail/Tube (Alt: IRG4PH40UDPBF) RoHS: Compliant Min Qty: 400 Container: Tube	Americas - 0	400:$3.1900 800:$3.0900 1600:$2.9900 2400:$2.8900 4000:$2.8900
IRG4PH40UDPBF DISTI # 63J7547	Infineon Technologies AG	SINGLE IGBT, 1.2KV, 41A,DC Collector Current:41A,Collector Emitter Saturation Voltage Vce(on):2.43V,Power Dissipation Pd:160W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:3Pins,Operating Temperature Max:150°C,MSL:- RoHS Compliant: Yes	89	500:$4.3300 250:$4.8300 100:$5.0900 50:$5.3600 25:$5.6100 10:$5.8700 1:$6.9200
IRG4PH40UDPBF DISTI # 70017610	Infineon Technologies AG	1200V ULTRAFAST 5-40 KHZ COPACK IGBT INA TO-247AC PACKAGE RoHS: Compliant	174	1:$8.6000 10:$7.5900 100:$6.6200 500:$5.7300 1000:$5.0600
IRG4PH40UDPBF DISTI # 942-IRG4PH40UDPBF	Infineon Technologies AG	IGBT Transistors 1200V UltraFast 5-40kHz RoHS: Compliant	368	1:$6.2900 10:$5.3400 100:$4.6300 250:$4.3900 500:$3.9400 1000:$3.3200 2500:$3.1600
IRG4PH40UDPBF DISTI # 8640959P	Infineon Technologies AG	IGBT 1200V 41A ULTRAFAST DIODE TO-247AC, TU	198	1000:£2.5750 500:£3.1200 250:£3.2600 50:£3.5150
IRG4PH40UDPBF DISTI # 8640959	Infineon Technologies AG	IGBT 1200V 41A ULTRAFAST DIODE TO-247AC, PK	28	1000:£2.5750 500:£3.1200 250:£3.2600 50:£3.5150 2:£4.2800
IRG4PH40UDPBF	International Rectifier	* FREE SHIPPING ORDERS OVER $100 *	72	23:$10.4340 7:$11.2800 1:$12.6900
IRG4PH40UDPBF DISTI # IRG4PH40UDPBF	Infineon Technologies AG	Transistor: IGBT,1200V,41A,160W,TO247-3	185	1:$4.9800 3:$4.4600 10:$3.7000 50:$3.2700
IRG4PH40UDPBF DISTI # IRG4PH40UDPBF	Infineon Technologies AG	1200V 41A 160W TO247AC RoHS: Compliant	120	5:€4.4800 25:€3.4800 100:€2.9800 200:€2.7300
IRG4PH40UDPBF DISTI # XSKDRABV0033184	Infineon Technologies AG	Insulated Gate Bipolar Transistor, 55A I(C),600VV(BR)CES, N-Channel, TO-247AC RoHS: Compliant	275 in Stock0 on Order	275:$3.9500 175:$4.2300
IRG4PH40UDPBF DISTI # 8650683	Infineon Technologies AG	IGBT, 1200V, 30A, TO-247AC RoHS: Compliant	100	250:$6.6300 100:$6.9900 10:$8.0600 1:$9.4800
IRG4PH40UDPBF DISTI # 8650683	Infineon Technologies AG	IGBT, 1200V, 30A, TO-247AC RoHS: Compliant	492	500:£3.2000 250:£3.3700 100:£3.4800 10:£3.5800 1:£4.4200

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IRG4PH40UDPBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes