IPB033N10N5LFATMA1

Mfr. #:: IPB033N10N5LFATMA1
Manufacturer:: Infineon Technologies
Description:: MOSFET DIFFERENTIATED MOSFETS
Lifecycle:: New from this manufacturer.
Datasheet:: IPB033N10N5LFATMA1 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: D2PAK-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 100 V

Id - Continuous Drain Current:: 120 A

Rds On - Drain-Source Resistance:: 2.7 mOhms

Vgs th - Gate-Source Threshold Voltage:: 2.5 V

Vgs - Gate-Source Voltage:: 20 V

Qg - Gate Charge:: 102 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 179 W

Configuration:: Single

Channel Mode:: Enhancement

Tradename:: OptiMOS

Packaging:: Reel

Series:: OptiMOS 5

Transistor Type:: 1 N-Channel

Brand:: Infineon Technologies

Forward Transconductance - Min:: 23 S

Fall Time:: 48 ns

Product Type:: MOSFET

Rise Time:: 32 ns

Factory Pack Quantity:: 1000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 64 ns

Typical Turn-On Delay Time:: 8 ns

Part # Aliases:: IPB033N10N5LF SP001503858

Unit Weight:: 0.067021 oz

Tags: IPB03, IPB0, IPB

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPB033N10N5LFATMA1 Description

***i-Key: MOSFET N-CH 100V D2PAK-3

***p One Stop Japan: Trans MOSFET N-CH 100V 120A

***et: MOS Power Transistors LV ( 41V-100V)

***ark: Mosfet, N-Ch, 100V, 120A, 179W, To-263; Transistor Polarity:n Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:100V; On Resistance Rds(On):0.0027Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.3V; Power Rohs Compliant: Yes

***ment14 APAC: Prices include import duty and tax. MOSFET, N-CH, 100V, 120A, 179W, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0027ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.3V; Power Dissipation Pd:179W; Transistor Case Style:TO-263; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:OptiMOS 5 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)

***nell: MOSFET, CAN N, 100V, 120A, 179W, TO-263; Polarità Transistor:Canale N; Corrente Continua di Drain Id:120A; Tensione Drain Source Vds:100V; Resistenza di Attivazione Rds(on):0.0027ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3.3V; Dissipazione di Potenza Pd:179W; Modello Case Transistor:TO-263; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:OptiMOS 5 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)

***ineon: OptiMOS Linear FET is a revolutionary approach to avoid the trade-off between on-state resistance (R DS(on)) and linear mode capability operation in the saturation region of an enhanced mode MOSFET. It offers the state-of-the-art R DS(on) of a trench MOSFET together with the wide safe operating area of a classic planar MOSFET. | Summary of Features: Combination of low R DS(on) and wide safe operating area (SOA); High max. pulse current; High continuous pulse current | Benefits: Rugged linear mode operation; Low conduction losses; Higher in-rush current enabled for faster start-up and shorter down time | Target Applications: Telecom; Battery management

Market price

Part #	Mfg.	Description	Stock	Price
IPB033N10N5LFATMA1 DISTI # V72:2272_17076760	Infineon Technologies AG	DIFFERENTIATED MOSFETS	486	250:$3.3280 100:$3.6060 25:$4.0540 10:$4.1280 1:$4.7760
IPB033N10N5LFATMA1 DISTI # V36:1790_17076760	Infineon Technologies AG	DIFFERENTIATED MOSFETS	0
IPB033N10N5LFATMA1 DISTI # IPB033N10N5LFATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 100V D2PAK-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	421In Stock	500:$3.6824 100:$4.5475 10:$5.5460 1:$6.2100
IPB033N10N5LFATMA1 DISTI # IPB033N10N5LFATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 100V D2PAK-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	421In Stock	500:$3.6824 100:$4.5475 10:$5.5460 1:$6.2100
IPB033N10N5LFATMA1 DISTI # IPB033N10N5LFATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 100V D2PAK-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	Temporarily Out of Stock	1000:$3.0152
IPB033N10N5LFATMA1 DISTI # 26196750	Infineon Technologies AG	DIFFERENTIATED MOSFETS	486	250:$3.5776 100:$3.8765 25:$4.3581 10:$4.4376 3:$5.1342
IPB033N10N5LFATMA1 DISTI # SP001503858	Infineon Technologies AG	MOS Power Transistors LV ( 41V-100V) (Alt: SP001503858) RoHS: Compliant Min Qty: 1000	Europe - 126	1000:€2.5900 2000:€2.4900 4000:€2.3900 6000:€2.1900 10000:€2.0900
IPB033N10N5LFATMA1 DISTI # IPB033N10N5LFATMA1	Infineon Technologies AG	MOS Power Transistors LV ( 41V-100V) - Tape and Reel (Alt: IPB033N10N5LFATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	1000:$2.7900 2000:$2.6900 4000:$2.5900 6000:$2.4900 10000:$2.3900
IPB033N10N5LFATMA1 DISTI # 93AC7099	Infineon Technologies AG	MOSFET, N-CH, 100V, 120A, 179W, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:120A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0027ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.3V,Power RoHS Compliant: Yes	710	500:$2.6000 250:$2.9000 100:$3.0500 50:$3.2100 25:$3.3600 10:$3.5200 1:$4.1400
IPB033N10N5LFATMA1 DISTI # 726-IPB033N10N5LFATM	Infineon Technologies AG	MOSFET DIFFERENTIATED MOSFETS RoHS: Compliant	2098	1:$5.1800 10:$4.4000 100:$3.8100 250:$3.6200 500:$3.2500 1000:$2.7400 2000:$2.6000
IPB033N10N5LFATMA1 DISTI # 2986457	Infineon Technologies AG	MOSFET, N-CH, 100V, 120A, 179W, TO-263 RoHS: Compliant	700	500:£2.4600 250:£2.8100 100:£2.9600 10:£3.4300 1:£4.4600
IPB033N10N5LFATMA1 DISTI # 2986457	Infineon Technologies AG	MOSFET, N-CH, 100V, 120A, 179W, TO-263 RoHS: Compliant	700	1000:$3.7800 500:$4.2300 250:$4.6700 100:$4.9300 10:$5.6200 1:$7.1600

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Availability

Stock:: Available
On Order:: 1984
Enter Quantity:

Current price of IPB033N10N5LFATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$5.18~~; ~~$5.18~~

10: ~~$4.40~~; ~~$44.00~~

100: ~~$3.81~~; ~~$381.00~~

250: ~~$3.62~~; ~~$905.00~~

500: ~~$3.25~~; ~~$1 625.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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IPB033N10N5LFATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes