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IXTP150N15X4

IXTP150N15X4
Mfr. #:
IXTP150N15X4
Manufacturer:
Littelfuse
Description:
MOSFET DISCMSFT NCH HIPERFET-QCLASS
Lifecycle:
New from this manufacturer.
Datasheet:
IXTP150N15X4 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
IXTP150N15X4 more Information
Product Attribute
Attribute Value
Manufacturer:
IXYS
Product Category:
MOSFET
RoHS:
Y
Mounting Style:
Through Hole
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
150 V
Id - Continuous Drain Current:
150 A
Rds On - Drain-Source Resistance:
7.2 mOhms
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
105 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
480 W
Channel Mode:
Enhancement
Tradename:
HiPerFET
Series:
X4-Class
Brand:
IXYS
Fall Time:
6 ns
Product Type:
MOSFET
Rise Time:
5 ns
Factory Pack Quantity:
50
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
60 ns
Typical Turn-On Delay Time:
23 ns
Tags
IXTP15, IXTP1, IXTP, IXT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
X4-Class 135V-150V Power MOSFETs
IXYS X4-Class 135V-150V Power MOSFETs are developed using a charge compensation principle and proprietary process technology. This technology results in Power MOSFETs with significantly reduced resistance RDS(on) and gate charge Qg. A low on-state resistance reduces the conduction losses; it also lowers the energy stored in the output capacitance, minimizing the switching losses. A low gate charge results in higher efficiency at light loads as well as lower gate drive requirements. These MOSFETs are also avalanche rated and exhibit a superior dv/dt performance. Due to the positive temperature coefficient of their on-state resistance, these MOSFETs can be operated in parallel to meet higher current requirements.
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
Ultra Junction MOSFETs
IXYS Ultra Junction MOSFETs feature low RDS(on) and low Qg in low inductance industry standard packages. These devices enable high power density, easy mounting, and space-saving opportunities. The ultra junction MOSFETs are ideal solutions in SMPS, DC-DC converters, PFC circuits, AC and DC motor drives, and robotics/servo controls.
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Availability
Stock:
25
On Order:
2008
Enter Quantity:
Current price of IXTP150N15X4 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$7.91
$7.91
10
$7.07
$70.70
25
$6.15
$153.75
50
$6.03
$301.50
100
$5.80
$580.00
250
$4.95
$1 237.50
500
$4.70
$2 350.00
1000
$3.96
$3 960.00
2500
$3.39
$8 475.00
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