SI9410BDY-T1-E3

SI9410BDY-T1-E3
Mfr. #:
SI9410BDY-T1-E3
Manufacturer:
Vishay
Description:
IGBT Transistors MOSFET 30V 8.1A 0.024Ohm
Lifecycle:
New from this manufacturer.
Datasheet:
SI9410BDY-T1-E3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer
VISHAY
Product Category
FETs - Single
Tags
SI9410BDY-T, SI9410BD, SI9410B, SI9410, SI941, SI94, SI9
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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans MOSFET N-CH 30V 6.2A 8-Pin SOIC N T/R
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:8.1A; On Resistance, Rds(on):24mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:SO-8 ;RoHS Compliant: Yes
***nell
MOSFET, N REEL 2500; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:6.2A; Resistance, Rds On:0.024ohm; Voltage, Vgs Rds on Measurement:4.5V; Voltage, Vgs th Typ:3V; Case Style:SOIC; Termination Type:SMD; Current, Idm Pulse:30A; N-channel Gate Charge:15nC; No. of Pins:8; Power, Pd:1.5W; Quantity, Reel:2500; Resistance, Rds on @ Vgs = 10V:0.024ohm; Resistance, Rds on @ Vgs = 4.5V:0.033ohm; Temperature, Tj Max:150°C; Temperature, Tj Min:-55°C; Time, Fall:11ns; Time, Rise:15ns; Time, t Off:30ns; Time, t On:10ns; Transistors, No. of:1; Voltage, Vds Max:30V; Width, Tape:12mm
Part # Mfg. Description Stock Price
SI9410BDY-T1-E3
DISTI # SI9410BDY-T1-E3TR-ND
Vishay SiliconixMOSFET N-CH 30V 6.2A 8SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
Limited Supply - Call
    SI9410BDY-T1-E3
    DISTI # SI9410BDY-T1-E3CT-ND
    Vishay SiliconixMOSFET N-CH 30V 6.2A 8SOIC
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    Limited Supply - Call
      SI9410BDY-T1-E3
      DISTI # SI9410BDY-T1-E3DKR-ND
      Vishay SiliconixMOSFET N-CH 30V 6.2A 8SOIC
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®
      Limited Supply - Call
        SI9410BDY-T1-E3
        DISTI # 781-SI9410BDY-T1-E3
        Vishay IntertechnologiesMOSFET 30V 8.1A 0.024Ohm
        RoHS: Compliant
        0
          SI9410BDY-T1
          DISTI # 781-SI9410BDY
          Vishay IntertechnologiesMOSFET 30V 8.1A 2.5W
          RoHS: Not compliant
          0
            SI9410BDY-T1-E3Vishay Intertechnologies 1150
              SI9410BDY-T1-E3Vishay Intertechnologies 2066
                SI9410BDY-T1-E3Vishay Intertechnologies 2892
                  SI9410BDY-T1-E3Vishay Siliconix 1728
                    SI9410BDYT1E3Vishay Intertechnologies 
                    RoHS: Compliant
                    Europe - 2025
                      Image Part # Description
                      SI9410BDY-T1-E3

                      Mfr.#: SI9410BDY-T1-E3

                      OMO.#: OMO-SI9410BDY-T1-E3

                      MOSFET RECOMMENDED ALT 781-SI4178DY-T1-GE3
                      SI9410BDY-T1-GE3

                      Mfr.#: SI9410BDY-T1-GE3

                      OMO.#: OMO-SI9410BDY-T1-GE3

                      MOSFET RECOMMENDED ALT 781-SI4178DY-T1-GE3
                      SI9410BDY-T1-GE3

                      Mfr.#: SI9410BDY-T1-GE3

                      OMO.#: OMO-SI9410BDY-T1-GE3-VISHAY

                      IGBT Transistors MOSFET 30V 8.1A 2.5W 24mohm @ 10V
                      SI9410BDY-T1-E3

                      Mfr.#: SI9410BDY-T1-E3

                      OMO.#: OMO-SI9410BDY-T1-E3-VISHAY

                      IGBT Transistors MOSFET 30V 8.1A 0.024Ohm
                      SI9410B

                      Mfr.#: SI9410B

                      OMO.#: OMO-SI9410B-1190

                      New and Original
                      SI9410BDY

                      Mfr.#: SI9410BDY

                      OMO.#: OMO-SI9410BDY-1190

                      POWER FIELD-EFFECT TRANSISTOR, N-CHANNEL, METAL-OXIDE SEMICONDUCTOR FET
                      SI9410BDY-T1

                      Mfr.#: SI9410BDY-T1

                      OMO.#: OMO-SI9410BDY-T1-1190

                      MOSFET RECOMMENDED ALT 781-SI4800BDY-E3
                      SI9410BDY-T1-E3.

                      Mfr.#: SI9410BDY-T1-E3.

                      OMO.#: OMO-SI9410BDY-T1-E3--1190

                      New and Original
                      Availability
                      Stock:
                      Available
                      On Order:
                      3500
                      Enter Quantity:
                      Current price of SI9410BDY-T1-E3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
                      Reference price (USD)
                      Quantity
                      Unit Price
                      Ext. Price
                      1
                      $0.00
                      $0.00
                      10
                      $0.00
                      $0.00
                      100
                      $0.00
                      $0.00
                      500
                      $0.00
                      $0.00
                      1000
                      $0.00
                      $0.00
                      Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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