SI9410BDY-T1-GE3

SI9410BDY-T1-GE3
Mfr. #:
SI9410BDY-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET RECOMMENDED ALT 781-SI4178DY-T1-GE3
Lifecycle:
New from this manufacturer.
Datasheet:
SI9410BDY-T1-GE3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI9410BDY-T1-GE3 DatasheetSI9410BDY-T1-GE3 Datasheet (P4-P6)
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Vishay
Product Category:
MOSFET
RoHS:
E
Technology:
Si
Tradename:
TrenchFET
Packaging:
Reel
Series:
SI9
Brand:
Vishay / Siliconix
Product Type:
MOSFET
Factory Pack Quantity:
2500
Subcategory:
MOSFETs
Part # Aliases:
SI9410BDY-GE3
Unit Weight:
0.017870 oz
Tags
SI9410BDY-T, SI9410BD, SI9410B, SI9410, SI941, SI94, SI9
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 30V 6.2A 8-Pin SOIC N T/R
***i-Key
MOSFET N-CH 30V 6.2A 8SOIC
***ukat
N-Ch 30V 8,1A 2,5W 0,024R SO8
***ment14 APAC
MOSFET, N CH, 30V, 8.1A , SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:6.2A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.019ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:1.5W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:MSL 1 - Unlimited
Part # Mfg. Description Stock Price
SI9410BDY-T1-GE3
DISTI # SI9410BDY-T1-GE3-ND
Vishay SiliconixMOSFET N-CH 30V 6.2A 8SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
Limited Supply - Call
    SI9410BDY-T1-GE3
    DISTI # 781-SI9410BDY-GE3
    Vishay IntertechnologiesMOSFET 30V 8.1A 2.5W 24mohm @ 10V
    RoHS: Compliant
    0
      Image Part # Description
      SI9410BDY-T1-E3

      Mfr.#: SI9410BDY-T1-E3

      OMO.#: OMO-SI9410BDY-T1-E3

      MOSFET RECOMMENDED ALT 781-SI4178DY-T1-GE3
      SI9410BDY-T1-GE3

      Mfr.#: SI9410BDY-T1-GE3

      OMO.#: OMO-SI9410BDY-T1-GE3

      MOSFET RECOMMENDED ALT 781-SI4178DY-T1-GE3
      SI9410BDY-T1-GE3

      Mfr.#: SI9410BDY-T1-GE3

      OMO.#: OMO-SI9410BDY-T1-GE3-VISHAY

      IGBT Transistors MOSFET 30V 8.1A 2.5W 24mohm @ 10V
      SI9410BDY-T1-E3

      Mfr.#: SI9410BDY-T1-E3

      OMO.#: OMO-SI9410BDY-T1-E3-VISHAY

      IGBT Transistors MOSFET 30V 8.1A 0.024Ohm
      SI9410BDY

      Mfr.#: SI9410BDY

      OMO.#: OMO-SI9410BDY-1190

      POWER FIELD-EFFECT TRANSISTOR, N-CHANNEL, METAL-OXIDE SEMICONDUCTOR FET
      SI9410BDY-T1

      Mfr.#: SI9410BDY-T1

      OMO.#: OMO-SI9410BDY-T1-1190

      MOSFET RECOMMENDED ALT 781-SI4800BDY-E3
      SI9410BDY-T1-E3.

      Mfr.#: SI9410BDY-T1-E3.

      OMO.#: OMO-SI9410BDY-T1-E3--1190

      New and Original
      Availability
      Stock:
      Available
      On Order:
      1000
      Enter Quantity:
      Current price of SI9410BDY-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
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