HGTG27N120BN

Mfr. #:: HGTG27N120BN
Manufacturer:: ON Semiconductor
Description:: IGBT 1200V 72A 500W TO247
Lifecycle:: New from this manufacturer.
Datasheet:: HGTG27N120BN Datasheet
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Product Attribute
Attribute Value

Manufacturer: Fairchild Semiconductor

Product Category: IGBTs - Single

Series: -

Packaging: Tube

Package-Case: TO-247-3

Input-Type: Standard

Mounting-Type: Through Hole

Supplier-Device-Package: TO-247

Power-Max: 500W

Reverse-Recovery-Time-trr: -

Current-Collector-Ic-Max: 72A

Voltage-Collector-Emitter-Breakdown-Max: 1200V

IGBT-Type: NPT

Current-Collector-Pulsed-Icm: 216A

Vce-on-Max-Vge-Ic: 2.7V @ 15V, 27A

Switching-Energy: 2.2mJ (on), 2.3mJ (off)

Gate-Charge: 270nC

Td-on-off-25°C: 24ns/195ns

Test-Condition: 960V, 27A, 3 Ohm, 15V

Tags: HGTG27N120BN, HGTG27N1, HGTG27, HGTG2, HGTG, HGT

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Vacuum Packaging with PL

Step2:
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HGTG27N120BN Description

***ical: Trans IGBT Chip N-CH 1200V 72A 500000mW 3-Pin(3+Tab) TO-247 Rail

***ure Electronics: HGTG27N120BN 72 A 1200 V NPT Series N-Channel IGBT - TO-247-3

***eco: Transistor HGTG27N120 IGBT N-Channel 1.2kVolt 72Amp TO-247

***p One Stop Japan: Trans IGBT Chip N-CH 1.2KV 72A 3-Pin(3+Tab) TO-247 Rail

***ser: IGBTs 72A, 1200V, NPT Series N-Ch IGBT

***et: PWR IGBT 56A 1200V NPT N-CHANNEL TO-247

***ark: Nptpigbt To247 56A 1200V Rohs Compliant: Yes

***th Star Micro: IGBT NPT N-CH 1200V 72A TO-247

***Semiconductor: 1200V, NPT IGBT

***rchild Semiconductor: HGTG27N120BN is based on Non- Punch Through(NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: UPS, solar inverter, motor control and power supplies.

***nell: IGBT, N 72A, 1200V TO-247; Transistor Type:IGBT; Transistor Polarity:N Channel; Voltage, Vces:1200V; Current Ic Continuous a Max:72A; Voltage, Vce Sat Max:2.7V; Power Dissipation:500W; Case Style:TO-247; Termination Type:Through Hole; Operating Temperature Range:-55°C to +150°C; No. of Pins:3

***ment14 APAC: IGBT, N 72A, 1200V TO-247; Transistor Type:IGBT; DC Collector Current:72A; Collector Emitter Voltage Vces:2.7V; Power Dissipation Pd:500W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:72A; Package / Case:TO-247; Power Dissipation Max:500W; Power Dissipation Pd:500W; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1.2kV

Market price

Part #	Mfg.	Description	Stock	Price
HGTG27N120BN DISTI # HGTG27N120BN-ND	ON Semiconductor	IGBT 1200V 72A 500W TO247 RoHS: Compliant Min Qty: 1 Container: Tube	450In Stock	1350:$3.6143 900:$4.2855 450:$4.7760 10:$6.1440 1:$6.8400
HGTG27N120BN DISTI # HGTG27N120BN	ON Semiconductor	Trans IGBT Chip N-CH 1.2KV 72A 3-Pin(3+Tab) TO-247 Rail - Rail/Tube (Alt: HGTG27N120BN) RoHS: Compliant Min Qty: 1 Container: Tube	Americas - 0	1:$2.7900 10:$2.7900 25:$2.7900 50:$2.6900 100:$2.6900 500:$2.6900 1000:$2.6900
HGTG27N120BN DISTI # HGTG27N120BN	ON Semiconductor	Trans IGBT Chip N-CH 1.2KV 72A 3-Pin(3+Tab) TO-247 Rail (Alt: HGTG27N120BN) RoHS: Compliant Min Qty: 450	Asia - 0
HGTG27N120BN DISTI # HGTG27N120BN	ON Semiconductor	Trans IGBT Chip N-CH 1.2KV 72A 3-Pin(3+Tab) TO-247 Rail (Alt: HGTG27N120BN) RoHS: Compliant Min Qty: 1	Europe - 0	1:€3.4900 10:€3.1900 25:€3.0900 50:€2.9900 100:€2.8900 500:€2.7900 1000:€2.5900
HGTG27N120BN DISTI # 58K1590	ON Semiconductor	Trans IGBT Chip N-CH 1.2KV 72A 3-Pin(3+Tab) TO-247 Rail - Bulk (Alt: 58K1590) RoHS: Compliant Min Qty: 1 Container: Bulk	Americas - 0	1:$7.5200 10:$6.7500 25:$6.4600 50:$6.1600 100:$5.8500 250:$5.5600 500:$5.2600
HGTG27N120BN DISTI # 61M6561	ON Semiconductor	IGBT Single Transistor, 72 A, 2.7 V, 500 W, 1.2 kV, TO-247, 3 RoHS Compliant: Yes	688	1:$6.3900 10:$5.5300 25:$4.8400 50:$4.5400 100:$3.9300 250:$3.3000 500:$3.2000
HGTG27N120BN DISTI # 58K1590	ON Semiconductor	IGBT, N 72A, 1200V TO-247,DC Collector Current:72A,Collector Emitter Saturation Voltage Vce(on):1.2kV,Power Dissipation Pd:500W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:3Pins,Operating Temperature Max:150°C,MSL:- RoHS Compliant: Yes	402	1:$7.7500 10:$6.9800 25:$6.6900 50:$6.3900 100:$6.0800 250:$5.7900 500:$5.4900
HGTG27N120BN. DISTI # 27AC6331	Fairchild Semiconductor Corporation	NPTPIGBT TO247 56A 1200V ROHS COMPLIANT: YES	0	1:$7.6700 10:$6.8900 25:$6.5900 50:$6.1600 100:$5.8500 250:$5.5600 500:$5.2600
HGTG27N120BN	Fairchild Semiconductor Corporation	Insulated Gate Bipolar Transistor, 72A I(C), 1200V V(BR)CES, N-Channel, TO-247 RoHS: Compliant	7160	1000:$4.5500 500:$4.7900 100:$4.9900 25:$5.2000 1:$5.6000
HGTG27N120BN DISTI # 512-HGTG27N120BN	ON Semiconductor	IGBT Transistors 72A 1200V NPT Series N-Ch IGBT RoHS: Compliant	0
HGTG27N120BN DISTI # 1470994	ON Semiconductor	IGBT, N 72A, 1200V TO-247 RoHS: Compliant	1090	1:$10.8300 10:$9.7300 450:$7.5600 900:$6.7900 1350:$5.7200
HGTG27N120BN DISTI # 1470994	ON Semiconductor	IGBT, N 72A, 1200V TO-247 RoHS: Compliant	1113	1:£6.4500 10:£4.7400 100:£4.2200 250:£3.6900 500:£3.3000

Image	Part #	Description
	Mfr.#: HGTG27N120BN OMO.#: OMO-HGTG27N120BN	IGBT Transistors 72A 1200V NPT Series N-Ch IGBT
	Mfr.#: HGTG27N120BG OMO.#: OMO-HGTG27N120BG-1190	New and Original
	Mfr.#: HGTG27N120BN OMO.#: OMO-HGTG27N120BN-ON-SEMICONDUCTOR	IGBT 1200V 72A 500W TO247
	Mfr.#: HGTG27N120BN G27N120BN OMO.#: OMO-HGTG27N120BN-G27N120BN-1190	New and Original
	Mfr.#: HGTG27N120BN(72A1200V) OMO.#: OMO-HGTG27N120BN-72A1200V--1190	New and Original
	Mfr.#: HGTG27N120BND OMO.#: OMO-HGTG27N120BND-1190	New and Original
	Mfr.#: HGTG27N60C3R OMO.#: OMO-HGTG27N60C3R-1190	Insulated Gate Bipolar Transistor, 54A I(C), 600V V(BR)CES, N-Channel, TO-247

HGTG27N120BN

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes