HGTG27N120BN

HGTG27N120BN vs HGTG27N120BN G27N120BN vs HGTG27N120BN(72A1200V)

 
PartNumberHGTG27N120BNHGTG27N120BN G27N120BNHGTG27N120BN(72A1200V)
DescriptionIGBT Transistors 72A 1200V NPT Series N-Ch IGBT
ManufacturerON Semiconductor--
Product CategoryIGBT Transistors--
RoHSY--
TechnologySi--
Package / CaseTO-247-3--
Mounting StyleThrough Hole--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max1200 V--
Collector Emitter Saturation Voltage2.45 V--
Maximum Gate Emitter Voltage20 V--
Continuous Collector Current at 25 C72 A--
Pd Power Dissipation500 W--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesHGTG27N120BN--
PackagingTube--
Continuous Collector Current Ic Max72 A--
Height20.82 mm--
Length15.87 mm--
Width4.82 mm--
BrandON Semiconductor / Fairchild--
Continuous Collector Current72 A--
Gate Emitter Leakage Current+/- 250 nA--
Product TypeIGBT Transistors--
Factory Pack Quantity450--
SubcategoryIGBTs--
Unit Weight0.225401 oz--
Manufacturer Part # Description RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
HGTG27N120BN IGBT Transistors 72A 1200V NPT Series N-Ch IGBT
ON Semiconductor
ON Semiconductor
HGTG27N120BN IGBT 1200V 72A 500W TO247
HGTG27N120BN G27N120BN New and Original
HGTG27N120BN(72A1200V) New and Original
HGTG27N120BND New and Original
Top