TPWR8004PL,L1Q

Mfr. #:: TPWR8004PL,L1Q
Manufacturer:: Toshiba
Description:: MOSFET N-CH Mosfet 40V 150A 8DSOP
Lifecycle:: New from this manufacturer.
Datasheet:: TPWR8004PL,L1Q Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: TPWR8004PL,L1Q Datasheet TPWR8004PL,L1Q Datasheet (P4-P6)TPWR8004PL,L1Q Datasheet (P7-P9)TPWR8004PL,L1Q Datasheet (P10)
ECAD Model:
More Information:: TPWR8004PL,L1Q more Information

Product Attribute
Attribute Value

Manufacturer:: Toshiba

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: DSOP Advance-8

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 40 V

Id - Continuous Drain Current:: 150 A

Rds On - Drain-Source Resistance:: 800 uOhms

Vgs th - Gate-Source Threshold Voltage:: 1.4 V

Vgs - Gate-Source Voltage:: 10 V

Qg - Gate Charge:: 103 nC

Maximum Operating Temperature:: + 175 C

Pd - Power Dissipation:: 170 W

Configuration:: Single

Channel Mode:: Enhancement

Packaging:: Reel

Height:: 0.73 mm

Length:: 5 mm

Series:: TPWR8004PL

Transistor Type:: 1 N-Channel

Width:: 5 mm

Brand:: Toshiba

Fall Time:: 14 ns

Product Type:: MOSFET

Rise Time:: 13 ns

Factory Pack Quantity:: 5000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 63 ns

Typical Turn-On Delay Time:: 26 ns

Unit Weight:: 0.003457 oz

Tags: TPWR80, TPWR8, TPWR, TPW

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

TPWR8004PL,L1Q Description

***ical: Trans MOSFET N-CH Si 40V 340A 8-Pin DSOP Advance

***: TRANS POWER MOSFET

***ineon SCT: 40V, N-Ch, 2.1 mΩ max, Automotive MOSFET, D2PAK 7pin, OptiMOS™-T, PG-TO263-7, RoHS

***et: Trans MOSFET N-CH 40V 160A 7-Pin(6+Tab) TO-263

*** Electronic Components: MOSFET N-Ch 40V 160A D2PAK-6 OptiMOS-T

***ronik: MOSFET 40V 2.4mOHM AECQ TO263 RoHSconf

***i-Key: OPTLMOS N-CHANNEL POWER MOSFET

***ineon: Summary of Features: N-channel - Enhancement mode; Automotive AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green package (RoHS compliant); Ultra low Rds(on); 100% Avalanche tested | Benefits: world's lowest RDS at 40V (on); highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: OptiMOS-T2 40V addresses all kind of EPS motor control, 3-phase and H-bridge motors, HVAC fan control, electric pumps, etc. especially in combination with PWM control.; Thus OptiMOS-T2 40V products based on Infineons advanced trench technology will be the benchmark for next generation of automotive applications in energy efficiency, CO2 reduction, e-drives.

***ure Electronics: Single N-Channel 40 V 1.4 mOhm 150 nC HEXFET® Power Mosfet - D2PAK-7

***ineon SCT: 40V Single N-Channel HEXFET Power MOSFET in a 7-Pin D2-Pak package, D2PAK7P, RoHS

***el Electronic: Transistor: N-MOSFET; unipolar; 40V; 195A; 231W; D2PAK-7

*** Stop Electro: Power Field-Effect Transistor, 195A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

***trelec: MOSFET Operating temperature: -55...175 °C Housing type: D2PAK Polarity: N Power dissipation: 231 W

***ark: T&R / MOSFET, 40V, 195A, 1.4 mOhm, 150 nC Qg, D2-7pin

***p One Stop Global: Trans MOSFET N-CH Si 40V 295A 7-Pin(6+Tab) D2PAK T/R

***ineon: Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability | Target Applications: Battery Operated Drive

***nell: MOSFET, N-CH, 40V, 195A, 7-D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:195A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0011ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:231W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-263; No. of Pins:7; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +175°C

***(Formerly Allied Electronics): IRLS3034PBF N-channel MOSFET Transistor; 343 A; 40 V; 3-Pin D2PAK

***roFlash: Single N-Channel 40 V 1.7 mOhm 108 nC HEXFET¬Æ Power Mosfet - D2PAK

***ineon SCT: 40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

***nell: MOSFET, N-CH 40V 195A D2PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 195A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.0014ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 2.5V; Powe

***ineon: Benefits: Optimized for Logic Level Drive; Very Low RDS(ON) at 4.5V VGS; Superior R*Q at 4.5V VGS; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability; Lead-Free | Target Applications: Battery Operated Drive

***ical: Trans MOSFET N-CH 40V 306A 7-Pin(6+Tab) D2PAK T/R

***emi: N-Channel PowerTrench® MOSFET 40V, 306A, 1.6mΩ

***rchild Semiconductor: This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

***ure Electronics: N-Channel 40 V 1.7 mOhm STripFET III Power Mosfet - H2PAK-6

***ical: Trans MOSFET N-CH 40V 180A Automotive 7-Pin(6+Tab) H2PAK T/R

***ark: MOSFET, N CH, 40V, 180A, H2PAK-6; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:180A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes

***icroelectronics: Automotive-grade N-channel 40 V, 1.6 mOhm typ., 160 A STripFET F3 PowerMOSFET in D2PAK package

***ark: MOSFET Transistor, N Channel, 160 A, 40 V, 2.5 mohm, 10 V, 4 V

***Yang: Trans MOSFET N-CH 40V 160A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel

***r Electronics: Power Field-Effect Transistor, 160A I(D), 40V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***nell: MOSFET, N, D2-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 160A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.0025ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation

TPWR8004PL,L1Q More Information

TPW MOSFETs: Toshiba's TPW MOSFETs features 8-pin DSOP Advance packages for the U-MOSVIII-H and U-MOSIX-H Series MOSFETs. The are designed for high-efficiency DC-DC converters, switching voltage regulators and motor drivers. They deliver high-speed switching, a small gate charge, and low on-resistance.

Market price

Part #	Mfg.	Description	Stock	Price
TPWR8004PL,L1Q DISTI # V72:2272_13896533	Toshiba America Electronic Components	MOSFET N-CH 40V 150A 8DSOP	4496	3000:$1.6700 1000:$1.7190 500:$2.0510 250:$2.3740 100:$2.5930 25:$2.8689 10:$2.8710 1:$3.5390
TPWR8004PL,L1Q DISTI # TPWR8004PLL1QCT-ND	Toshiba America Electronic Components	MOSFET N-CH 40V 150A 8DSOP RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1646In Stock	1000:$1.8746 500:$2.2227 100:$2.7450 10:$3.3480 1:$3.7500
TPWR8004PL,L1Q DISTI # TPWR8004PLL1QDKR-ND	Toshiba America Electronic Components	MOSFET N-CH 40V 150A 8DSOP RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	1646In Stock	1000:$1.8746 500:$2.2227 100:$2.7450 10:$3.3480 1:$3.7500
TPWR8004PL,L1Q DISTI # TPWR8004PLL1QTR-ND	Toshiba America Electronic Components	MOSFET N-CH 40V 150A 8DSOP RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	On Order	5000:$1.8200
TPWR8004PL,L1Q DISTI # 30342424	Toshiba America Electronic Components	MOSFET N-CH 40V 150A 8DSOP	4496	3000:$1.6700 1000:$1.7190 500:$2.0510 250:$2.3740 100:$2.5930 25:$2.8689 10:$2.8710 4:$3.5390
TPWR8004PL,L1Q(M DISTI # 30604438	Toshiba America Electronic Components	TPWR8004PL,L1Q(M	3077	500:$2.3715 100:$2.5245 50:$2.9453 10:$3.3022 7:$4.0927
TPWR8004PL,L1Q DISTI # TPWR8004PL,L1Q	Toshiba America Electronic Components	Trans MOSFET N-CH 40V 150A 8-Pin DSOP - Tape and Reel (Alt: TPWR8004PL,L1Q) RoHS: Compliant Min Qty: 5000 Container: Reel	Americas - 0	5000:$1.9900 10000:$1.8900 20000:$1.7900 30000:$1.6900 50000:$1.5900
TPWR8004PL,L1Q DISTI # 757-TPWR8004PLL1Q	Toshiba America Electronic Components	MOSFET N-CH Mosfet 40V 150A 8DSOP RoHS: Compliant	6097	1:$3.6400 10:$2.9300 100:$2.6700 250:$2.4100 500:$2.1600 1000:$1.8200 2500:$1.7300 5000:$1.6700
TPWR8004PL,L1Q(M DISTI # C1S751201142580	Toshiba America Electronic Components	MOSFETs Silicon N-channel MOS (U-MOS 4-H) RoHS: Not Compliant	3077	2000:$1.7600 500:$1.8600 100:$1.9800 50:$2.3100 10:$2.5900 1:$3.2100

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TPWR8004PL,L1Q

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes