TPWR80

TPWR8004PL,L1Q vs TPWR8004PL vs TPWR8004PL,L1Q(M

 
PartNumberTPWR8004PL,L1QTPWR8004PLTPWR8004PL,L1Q(M
DescriptionMOSFET N-CH Mosfet 40V 150A 8DSOPTrans MOSFET N-CH 40V 150A 8-Pin DSOP (Alt: TPWR8004PL,L1Q(M)
ManufacturerToshibaToshiba Semiconductor and Storage-
Product CategoryMOSFETFETs - Single-
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseDSOP Advance-8--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage40 V--
Id Continuous Drain Current150 A--
Rds On Drain Source Resistance800 uOhms--
Vgs th Gate Source Threshold Voltage1.4 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge103 nC--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation170 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReelDigi-ReelR Alternate Packaging-
Height0.73 mm--
Length5 mm--
SeriesTPWR8004PL--
Transistor Type1 N-Channel--
Width5 mm--
BrandToshiba--
Fall Time14 ns--
Product TypeMOSFET--
Rise Time13 ns--
Factory Pack Quantity5000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time63 ns--
Typical Turn On Delay Time26 ns--
Unit Weight0.003457 oz--
Package Case-8-PowerWDFN-
Operating Temperature-175°C (TJ)-
Mounting Type-Surface Mount-
Supplier Device Package-8-DSOP Advance-
FET Type-MOSFET N-Channel, Metal Oxide-
Power Max-1W-
Drain to Source Voltage Vdss-40V-
Input Capacitance Ciss Vds-9600pF @ 20V-
FET Feature-Standard-
Current Continuous Drain Id 25°C-150A (Tc)-
Rds On Max Id Vgs-0.8 mOhm @ 50A, 10V-
Vgs th Max Id-2.4V @ 1mA-
Gate Charge Qg Vgs-103nC @ 10V-
Manufacturer Part # Description RFQ
Toshiba
Toshiba
TPWR8004PL,L1Q MOSFET N-CH Mosfet 40V 150A 8DSOP
TPWR8004PLL1QCT-ND New and Original
TPWR8004PLL1QDKR-ND New and Original
TPWR8004PLL1QTR-ND New and Original
TPWR8004PL New and Original
TPWR8004PL,L1Q MOSFET N-CH 40V 150A 8DSOP
TPWR8004PL,L1Q(M Trans MOSFET N-CH 40V 150A 8-Pin DSOP (Alt: TPWR8004PL,L1Q(M)
TPWR8004PLL1Q MOSFET POWER MOSFET TRANSISTOR
TPWR8004PLL1Q(M New and Original
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