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| PartNumber | TPWR8004PL,L1Q | TPWR8004PL | TPWR8004PL,L1Q(M |
| Description | MOSFET N-CH Mosfet 40V 150A 8DSOP | Trans MOSFET N-CH 40V 150A 8-Pin DSOP (Alt: TPWR8004PL,L1Q(M) | |
| Manufacturer | Toshiba | Toshiba Semiconductor and Storage | - |
| Product Category | MOSFET | FETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | DSOP Advance-8 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 40 V | - | - |
| Id Continuous Drain Current | 150 A | - | - |
| Rds On Drain Source Resistance | 800 uOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.4 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 103 nC | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 170 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | Digi-ReelR Alternate Packaging | - |
| Height | 0.73 mm | - | - |
| Length | 5 mm | - | - |
| Series | TPWR8004PL | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 5 mm | - | - |
| Brand | Toshiba | - | - |
| Fall Time | 14 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 13 ns | - | - |
| Factory Pack Quantity | 5000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 63 ns | - | - |
| Typical Turn On Delay Time | 26 ns | - | - |
| Unit Weight | 0.003457 oz | - | - |
| Package Case | - | 8-PowerWDFN | - |
| Operating Temperature | - | 175°C (TJ) | - |
| Mounting Type | - | Surface Mount | - |
| Supplier Device Package | - | 8-DSOP Advance | - |
| FET Type | - | MOSFET N-Channel, Metal Oxide | - |
| Power Max | - | 1W | - |
| Drain to Source Voltage Vdss | - | 40V | - |
| Input Capacitance Ciss Vds | - | 9600pF @ 20V | - |
| FET Feature | - | Standard | - |
| Current Continuous Drain Id 25°C | - | 150A (Tc) | - |
| Rds On Max Id Vgs | - | 0.8 mOhm @ 50A, 10V | - |
| Vgs th Max Id | - | 2.4V @ 1mA | - |
| Gate Charge Qg Vgs | - | 103nC @ 10V | - |