IRF5305STRLPBF

IRF5305STRLPBF
Mfr. #:
IRF5305STRLPBF
Manufacturer:
Infineon / IR
Description:
MOSFET MOSFT PCh -55V -31A 60mOhm 42nC
Lifecycle:
New from this manufacturer.
Datasheet:
IRF5305STRLPBF Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TO-252-3
Number of Channels:
1 Channel
Transistor Polarity:
P-Channel
Vds - Drain-Source Breakdown Voltage:
55 V
Id - Continuous Drain Current:
31 A
Rds On - Drain-Source Resistance:
60 mOhms
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
42 nC
Pd - Power Dissipation:
110 W
Configuration:
Single
Packaging:
Reel
Height:
2.3 mm
Length:
6.5 mm
Transistor Type:
1 P-Channel
Width:
6.22 mm
Brand:
Infineon / IR
Product Type:
MOSFET
Factory Pack Quantity:
800
Subcategory:
MOSFETs
Part # Aliases:
SP001564840
Unit Weight:
0.139332 oz
Tags
IRF5305STRLPBF, IRF5305STRLP, IRF5305STRL, IRF5305STR, IRF5305ST, IRF5305S, IRF5305, IRF530, IRF53, IRF5, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ineon SCT
-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***ure Electronics
Single P-Channel 55 V 60 mOhm 42 nC HEXFET® Power Mosfet - D2PAK
***nell
MOSFET, P, D2-PAK; Transistor Polarity: P Channel; Continuous Drain Current Id: 31A; Drain Source Voltage Vds: -55V; On Resistance Rds(on): 0.06ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -4V; Power Dissipation
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 31A I(D), 55V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET
***trelec
Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = -31 / Drain-Source Voltage (Vds) V = -55 / ON Resistance (Rds(on)) mOhm = 60 / Gate-Source Voltage V = 20 / Fall Time ns = 63 / Rise Time ns = 66 / Turn-OFF Delay Time ns = 39 / Turn-ON Delay Time ns = 14 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-263 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 3.8
***icroelectronics
N-channel 60 V, 0.22 Ohm typ., 38 A STripFET(TM) II Power MOSFET in a D2PAK package
***ure Electronics
N-Channel 60 V 38 A 28 mOhm 80 W Surface Mount STripFET™ Mosfet - D2PAK
***ical
Trans MOSFET N-CH 60V 38A Automotive 3-Pin(2+Tab) D2PAK T/R
***ment14 APAC
MOSFET, N CH, 60V, 38A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:19A; Drain Source Voltage Vds:60V; On Resistance Rds(on):235mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:80W; Operating Temperature Range:-65°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:38A; Package / Case:D2-PAK; Power Dissipation Pd:80W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:60V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***emi
N-Channel Power MOSFET, Logic Level, QFET®, 60 V, 32 A, 35 mΩ, D2PAK
***ark
TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,32A I(D),TO-263AB
***ure Electronics
N-Channel 60 V 0.035 Ohm Surface Mount Mosfet - D2PAK-3
***et Europe
Trans MOSFET N-CH 60V 32A 3-Pin(2+Tab) D2PAK T/R
***enic
60V 32A 35m´Î@10V16A 79W 2.5V@250Ã×A N Channel D2PAK¨×TO-263AB¨Ø MOSFETs ROHS
***r Electronics
Power Field-Effect Transistor, 32A I(D), 60V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***nell
MOSFET, N CH, 60V, 32A, TO263AB-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 32A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.027ohm; Available until stocks are exhausted Alternative available
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
***ineon SCT
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***ure Electronics
Single N-Channel 55 V 0.06 Ohm 25 nC HEXFET® Power Mosfet - D2PAK
***p One Stop
Trans MOSFET N-CH 55V 30A 3-Pin(2+Tab) D2PAK T/R
***eco
IRLZ34NSTRLPBF,MOSFET, 55V, 30 A, 35 MOHM, 16.7 NC QG, LOGIC
*** Stop Electro
Power Field-Effect Transistor, 30A I(D), 55V, 0.046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Continuous Drain Current, Id:30A; On Resistance, Rds(on):60mohm; Rds(on) Test Voltage, Vgs:16V; Package/Case:D-Pak; Power Dissipation, Pd:68W ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, N, 55V, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:55V; On Resistance Rds(on):35ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:68W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Cont Current Id @ 100°C:21A; Cont Current Id @ 25°C:30A; Current Id Max:30A; Package / Case:D2-PAK; Power Dissipation Pd:68W; Power Dissipation Pd:68W; Pulse Current Idm:110A; Rth:2.2; Termination Type:SMD; Voltage Vds:55V; Voltage Vds Typ:55V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V; Voltage Vgs th Min:1V
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 30 / Drain-Source Voltage (Vds) V = 55 / ON Resistance (Rds(on)) mOhm = 35 / Gate-Source Voltage V = 16 / Fall Time ns = 29 / Rise Time ns = 100 / Turn-OFF Delay Time ns = 21 / Turn-ON Delay Time ns = 8.9 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-263 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 68
***et Europe
Transistor MOSFET N-CH 55V 29A 3-Pin D2PAK T/R
***ure Electronics
Single N-Channel 55 V 0.04 Ohm 34 nC HEXFET® Power Mosfet - D2PAK
***ineon SCT
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***fin
Transistor NPN Field Effect IRFZ34/SO/IRFZ34NS INTERNATIONAL RECTIFIER Ampere=26 V=55 TO263
***(Formerly Allied Electronics)
Power MOSFET,N-Ch,VDSS 55V,RDS(ON) 0.04Ohm,ID 29A,D2Pak,PD 68W,VGS+/-20V,Qg 34nC
***eco
IRFZ34NSTRLPBF,MOSFET, 55V, 29 A, 40 MOHM, 22.7 NC QG, D2-PA
*** Stop Electro
Power Field-Effect Transistor, 29A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***ark
N Channel Mosfet, 55V, 29A, D2-Pak; Transistor Polarity:n Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:29A; On Resistance Rds(On):0.04Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes
***-Wing Technology
Tube Surface Mount P-Channel Single Mosfet Transistor 27.5A Ta 27.5A 120W 190ns
***ser
MOSFETs- Power and Small Signal -60V -27.5A Pchannel No-Cancel/No-Return
***r Electronics
Power Field-Effect Transistor, 27.5A I(D), 60V, 0.082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***ser
MOSFETs- Power and Small Signal NFET 60V 30A
***i-Key
MOSFET N-CH 60V 27A D2PAK
***r Electronics
Power Field-Effect Transistor, 27A I(D), 60V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***el Electronic
RES SMD 160 OHM 1% 1/4W 1206
Part # Mfg. Description Stock Price
IRF5305STRLPBF
DISTI # V72:2272_13889606
Infineon Technologies AGTrans MOSFET P-CH 55V 31A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
16
  • 10:$0.8613
  • 1:$1.1352
IRF5305STRLPBF
DISTI # IRF5305STRLPBFCT-ND
Infineon Technologies AGMOSFET P-CH 55V 31A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
1772In Stock
  • 100:$1.2208
  • 10:$1.5450
  • 1:$1.7400
IRF5305STRLPBF
DISTI # IRF5305STRLPBFDKR-ND
Infineon Technologies AGMOSFET P-CH 55V 31A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
1772In Stock
  • 100:$1.2208
  • 10:$1.5450
  • 1:$1.7400
IRF5305STRLPBF
DISTI # IRF5305STRLPBFTR-ND
Infineon Technologies AGMOSFET P-CH 55V 31A D2PAK
RoHS: Compliant
Min Qty: 800
Container: Tape & Reel (TR)
800In Stock
  • 800:$0.8031
IRF5305STRLPBF
DISTI # 30690092
Infineon Technologies AGTrans MOSFET P-CH 55V 31A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
4800
  • 200:$0.8147
  • 100:$0.9244
  • 50:$1.0914
  • 10:$1.3260
IRF5305STRLPBF
DISTI # 30719847
Infineon Technologies AGTrans MOSFET P-CH 55V 31A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
800
  • 800:$0.5328
IRF5305STRLPBF
DISTI # 30606096
Infineon Technologies AGTrans MOSFET P-CH 55V 31A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
666
  • 11:$2.3750
IRF5305STRLPBF
DISTI # 27565934
Infineon Technologies AGTrans MOSFET P-CH 55V 31A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
16
  • 13:$1.1352
IRF5305STRLPBF
DISTI # IRF5305STRLPBF
Infineon Technologies AGTrans MOSFET P-CH 55V 31A 3-Pin(2+Tab) D2PAK T/R (Alt: IRF5305STRLPBF)
RoHS: Compliant
Min Qty: 1600
Container: Tape and Reel
Asia - 8000
  • 800:$0.5085
  • 1600:$0.4876
  • 2400:$0.4810
  • 4000:$0.4623
  • 8000:$0.4563
  • 20000:$0.4449
  • 40000:$0.4341
IRF5305STRLPBF
DISTI # IRF5305STRLPBF
Infineon Technologies AGTrans MOSFET P-CH 55V 31A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: IRF5305STRLPBF)
RoHS: Compliant
Min Qty: 1600
Container: Reel
Americas - 0
  • 1600:$0.5059
  • 3200:$0.4879
  • 4800:$0.4699
  • 8000:$0.4549
  • 16000:$0.4469
IRF5305STRLPBF
DISTI # SP001564840
Infineon Technologies AGTrans MOSFET P-CH 55V 31A 3-Pin(2+Tab) D2PAK T/R (Alt: SP001564840)
RoHS: Compliant
Min Qty: 800
Container: Tape and Reel
Europe - 0
  • 800:€0.5399
  • 1600:€0.4409
  • 3200:€0.4049
  • 4800:€0.3729
  • 8000:€0.3469
IRF5305STRLPBF
DISTI # 40M7919
Infineon Technologies AGP CHANNEL MOSFET, -55V, 31A, D2-PAK,Transistor Polarity:P Channel,Continuous Drain Current Id:-31A,Drain Source Voltage Vds:-55V,On Resistance Rds(on):0.06ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-4V RoHS Compliant: Yes819
  • 1:$1.6000
  • 10:$1.3600
  • 25:$1.2500
  • 50:$1.1400
  • 100:$1.0400
  • 250:$0.9800
  • 500:$0.9200
IRF5305STRLPBF.
DISTI # 26AC0593
Infineon Technologies AGP CHANNEL MOSFET, -55V, 31A, D2-PAK,Transistor Polarity:P Channel,Continuous Drain Current Id:-31A,Drain Source Voltage Vds:-55V,On Resistance Rds(on):0.06ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-4V RoHS Compliant: Yes0
    IRF5305STRLPBF
    DISTI # 70017469
    Infineon Technologies AGMOSFET,Power,P-Ch,VDSS -55V,RDS(ON) 0.06Ohm,ID -31A,D2Pak,PD 110W,VGS +/-20V
    RoHS: Compliant
    40
    • 1:$2.2340
    • 10:$1.9710
    • 100:$1.7180
    • 500:$1.4890
    • 1000:$1.3140
    IRF5305STRLPBFInfineon Technologies AGSingle P-Channel 55V 0.06 Ohm 63 nC HEXFET Power Mosfet - D2PAK
    RoHS: Compliant
    11Cut Tape/Mini-Reel
    • 1:$0.7850
    • 50:$0.6900
    • 100:$0.6750
    • 250:$0.6550
    • 500:$0.6300
    IRF5305STRLPBFInfineon Technologies AGSingle P-Channel 55V 0.06 Ohm 63 nC HEXFET Power Mosfet - D2PAK
    RoHS: Compliant
    7200Reel
    • 800:$0.5650
    • 1600:$0.5450
    IRF5305STRLPBF
    DISTI # 942-IRF5305STRLPBF
    Infineon Technologies AGMOSFET MOSFT PCh -55V -31A 60mOhm 42nC
    RoHS: Compliant
    2830
    • 1:$1.4500
    • 10:$1.2400
    • 100:$0.9460
    • 500:$0.8360
    • 800:$0.6600
    • 2400:$0.5850
    • 9600:$0.5630
    IRF5305STRLPBFInternational Rectifier 654
      IRF5305STRLPBF
      DISTI # 8312834P
      Infineon Technologies AGHEXFET P-CH MOSFET 31A 55V D2PAK, RL1890
      • 100:£0.6840
      • 200:£0.6500
      • 400:£0.6150
      • 800:£0.4770
      IRF5305STRLPBF
      DISTI # 8312834
      Infineon Technologies AGHEXFET P-CH MOSFET 31A 55V D2PAK, PK200
      • 10:£0.9640
      • 100:£0.6840
      • 200:£0.6500
      • 400:£0.6150
      • 800:£0.4770
      IRF5305STRLPBF
      DISTI # IRF5305STRLPBF
      Infineon Technologies AGTransistor: P-MOSFET,unipolar,-55V,-31A,110W,D2PAK1
      • 1:$0.8235
      • 3:$0.7089
      • 10:$0.5695
      • 100:$0.4944
      IRF5305STRLPBF
      DISTI # IRF5305SPBF-GURT
      Infineon Technologies AGP-Ch 55V 31A 110W 0,06R DPak
      RoHS: Compliant
      800
      • 10:€0.6710
      • 50:€0.4910
      • 200:€0.4310
      • 500:€0.4150
      IRF5305STRLPBFInfineon Technologies AGINSTOCK1163
        IRF5305STRLPBF
        DISTI # C1S322000480791
        Infineon Technologies AGTrans MOSFET P-CH 55V 31A 3-Pin(2+Tab) D2PAK T/R
        RoHS: Compliant
        666
        • 100:$1.0700
        • 50:$1.2600
        • 10:$1.5500
        • 1:$1.9000
        IRF5305STRLPBF
        DISTI # C1S322000480782
        Infineon Technologies AGTrans MOSFET P-CH 55V 31A 3-Pin(2+Tab) D2PAK T/R
        RoHS: Compliant
        16
        • 10:$0.8613
        IRF5305STRLPBF
        DISTI # C1S322000480773
        Infineon Technologies AGTrans MOSFET P-CH 55V 31A 3-Pin(2+Tab) D2PAK T/R
        RoHS: Compliant
        4800
        • 1600:$0.5770
        • 200:$0.6440
        • 100:$0.7310
        • 50:$0.8640
        • 10:$1.0500
        • 1:$2.0600
        IRF5305STRLPBFInfineon Technologies AG-55V,60m,-31A,P-Channel Power MOSFET1250
        • 1:$1.0200
        • 100:$0.8500
        • 500:$0.7500
        • 1000:$0.7300
        IRF5305STRLPBF
        DISTI # 2577177
        Infineon Technologies AGMOSFET, P-CH, -55V, -31A, TO-263-3
        RoHS: Compliant
        645
        • 1:$2.3000
        • 10:$1.9700
        • 100:$1.5100
        • 500:$1.3300
        • 800:$1.0500
        • 2400:$0.9270
        • 9600:$0.8910
        IRF5305STRLPBF
        DISTI # 2577177
        Infineon Technologies AGMOSFET, P-CH, -55V, -31A, TO-263-3
        RoHS: Compliant
        515
        • 5:£0.9830
        • 25:£0.9540
        • 100:£0.6630
        • 250:£0.6270
        • 500:£0.4870
        IRF5305STRLPBF
        DISTI # XSFP00000074383
        Infineon Technologies AG 
        RoHS: Compliant
        18844
        • 800:$0.8600
        • 18844:$0.8062
        Image Part # Description
        MCP73831T-2ATI/OT

        Mfr.#: MCP73831T-2ATI/OT

        OMO.#: OMO-MCP73831T-2ATI-OT

        Battery Management Charge mgnt contr
        MMBT2222A-7-F

        Mfr.#: MMBT2222A-7-F

        OMO.#: OMO-MMBT2222A-7-F

        Bipolar Transistors - BJT 40V 300mW
        IRF5305PBF

        Mfr.#: IRF5305PBF

        OMO.#: OMO-IRF5305PBF

        MOSFET MOSFT PCh -55V -31A 60mOhm 42nC
        RC0603FR-071KL

        Mfr.#: RC0603FR-071KL

        OMO.#: OMO-RC0603FR-071KL

        Thick Film Resistors - SMD 1K OHM 1%
        MCP73831T-2ATI/OT

        Mfr.#: MCP73831T-2ATI/OT

        OMO.#: OMO-MCP73831T-2ATI-OT-MICROCHIP-TECHNOLOGY

        Battery Management Charge mgnt cont
        885012206071

        Mfr.#: 885012206071

        OMO.#: OMO-885012206071-WURTH-ELECTRONICS

        CAP CER 0.1UF 25V X7R 0603
        RC0603FR-071K5L

        Mfr.#: RC0603FR-071K5L

        OMO.#: OMO-RC0603FR-071K5L-YAGEO

        Thick Film Resistors - SMD 1.5K OHM 1%
        RC0603FR-07100KL

        Mfr.#: RC0603FR-07100KL

        OMO.#: OMO-RC0603FR-07100KL-YAGEO

        Thick Film Resistors - SMD 100K OHM 1%
        RC0603FR-0712KL

        Mfr.#: RC0603FR-0712KL

        OMO.#: OMO-RC0603FR-0712KL-YAGEO

        Thick Film Resistors - SMD 12K OHM 1%
        RC0603FR-07220RL

        Mfr.#: RC0603FR-07220RL

        OMO.#: OMO-RC0603FR-07220RL-YAGEO

        Thick Film Resistors - SMD 220 OHM 1%
        Availability
        Stock:
        Available
        On Order:
        1987
        Enter Quantity:
        Current price of IRF5305STRLPBF is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
        Reference price (USD)
        Quantity
        Unit Price
        Ext. Price
        1
        $1.45
        $1.45
        10
        $1.24
        $12.40
        100
        $0.95
        $94.60
        500
        $0.84
        $418.00
        Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
        Newest Products
        • VFD-EL Series Micro AC Drives
          Delta IA’s VFD-EL series micro AC drives with built-in EMI filters and RFI switches feature easy DC bus sharing for side-by-side installation.
        • TinyScreen+ Processor Board
          TinyScreen+ is TinyCircuits' processor board based on the TinyScreen shield with an added Atmel SAMD21 processor and Microchip MCP73831 battery charger.
        • IR1 Series Single Gas Sensors
          Amphenol SGX Sensortech's IR1 series sensors monitor gas levels in general safety applications requiring a flameproof enclosure and where the sensor size is restricted.
        • Compare IRF5305STRLPBF
          IRF5305STRLPBF vs IRF5305STRLPBFIRF5305SP vs IRF5305STRLPBFCUTTAPE
        • HSD Series Connectors
          NMB’s HSD series high-performance connectors for digital low voltage differential signals can be used with shielded, twisted quad cables.
        • TurboFan DC Series
          Built with an integral stationary blade, a single rotor, and an aerodynamic casing these fans are designed for high pressure performance while being efficient.
        Top