PartNumber | IRF5305STRLPBF | IRF5305STRL | IRF5305STRLPB |
Description | MOSFET MOSFT PCh -55V -31A 60mOhm 42nC | HEXFET P-CH MOSFET 31A 55V D2PAK, RL | |
Manufacturer | Infineon | IR | IR |
Product Category | MOSFET | FETs - Single | FETs - Single |
RoHS | Y | - | - |
Technology | Si | - | Si |
Mounting Style | SMD/SMT | - | SMD/SMT |
Package / Case | TO-252-3 | - | - |
Number of Channels | 1 Channel | - | 1 Channel |
Transistor Polarity | P-Channel | - | P-Channel |
Vds Drain Source Breakdown Voltage | 55 V | - | - |
Id Continuous Drain Current | 31 A | - | - |
Rds On Drain Source Resistance | 60 mOhms | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Qg Gate Charge | 42 nC | - | - |
Pd Power Dissipation | 110 W | - | - |
Configuration | Single | - | - |
Packaging | Reel | - | Reel |
Height | 2.3 mm | - | - |
Length | 6.5 mm | - | - |
Transistor Type | 1 P-Channel | - | 1 P-Channel |
Width | 6.22 mm | - | - |
Brand | Infineon / IR | - | - |
Product Type | MOSFET | - | - |
Factory Pack Quantity | 800 | - | - |
Subcategory | MOSFETs | - | - |
Part # Aliases | SP001564840 | - | - |
Unit Weight | 0.139332 oz | - | 0.139332 oz |
Package Case | - | - | TO-252-3 |
Pd Power Dissipation | - | - | 110 W |
Vgs Gate Source Voltage | - | - | 20 V |
Id Continuous Drain Current | - | - | - 31 A |
Vds Drain Source Breakdown Voltage | - | - | - 55 V |
Rds On Drain Source Resistance | - | - | 60 mOhms |
Qg Gate Charge | - | - | 42 nC |